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Mechanism of refractive index increase in silica glass for the development of fiber-optic photodevices

Mechanism of refractive index increase in silica glass for the development of fiber-optic photodevices
用于开发光纤光电器件的石英玻璃折射率增加机制
批准号:
12450132
负责人:
OHKI Yoshimichi
金额:
$6.91万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (B)
财政年份:
2000
资助国家:
日本
项目状态:
已结题
起止时间:
2000 至 2002

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中文摘要
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英文摘要
The refractive index change induced in a transparent material by UV photon or ion irradiation promises direct drawing of a waveguide that can be used as optical gratings. Structural changes in silica glass induced by ion microbeam were evaluated using microscopic photoluminescence and Raman scattering, and optical and atomic force microscopes (AFM) measurements. The AFM measurements on the microbeam irradiated area show the formation of a groove on the surface. In addtion, a cross sectional observation on the surface parallel to the incident plane reveals surface deformation along the ion tracks, which is deepest at the projected range of ions. Taking into account the possible structural changes of silica induced by energy deposition, the measured topological changes at the front and side surfaces result from internal compaction of silica glass. Refractive index changes were estimated from the Lorentz-Lorenz relationship using the distribution of the internal compaction estimated by the AFM measurements. A small refractive index change was observed along the ion tracks besides a much stronger index change at the projected range, suggesting that energy depositions by the ionization as well as by the atomic collision should be taken into account.It has also become clear that the refractive index change can be induced by UV photons from a KrF excimer laser in a-SiO_x N_y : H films prepared by PECVD. Fabrication of a diffraction grating was performed using a phase mask made of a high quality fused silica plate. The surface of the fabricated grating observed by scanning electron microscopy (SEM). A clear square-toothed pattern with periodicity of around 1 μm can be observed. Furthermore, from the Fraunhofer diffraction pattern, the periodicity of the grating pattern was estimated to be around 1 μm, which agrees with the SEM image. This simply demonstrates that a-SiO_xN_y : H can be processed by UV photon irradiation.
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会议论文
柏尾典秀, 大木義路他: "a-SiN_x:H膜におけるフォトルミネセンスの温度依存性"第48回応用物理学関係連合講演会. 2巻. 934 (2001)
Norihide Kashio、Yoshimichi Oki 等人:“a-SiN_x:H 薄膜中光致发光的温度依赖性”第 48 届应用物理会议第 2. 934 卷(2001 年)。
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通讯作者:
Hiromitsu Kato, Yoshimichi Ohki, et al.: "Characterization of hafnium and zirconium silicate films fabricated by plasma-enhanced chemical vapor deposition"International Workshop on Gate Insulator 2001. 16-169 (2001)
Hiromitsu Kato、Yoshimichi Ohki 等人:“通过等离子体增强化学气相沉积制造的硅酸铪和硅酸锆薄膜的特性”栅极绝缘体国际研讨会 2001. 16-169 (2001)
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通讯作者:
Hiroyuki Nishikawa, Yoshimichi Ohki et al.: "Radiation effects and surface deformation of silica by ion microbeam"Nuclear Instruments an Methods in Physics Research B. Vol.191. 342-345 (2002)
Hiroyuki Nishikawa、Yoshimichi Ohki 等人:“离子微束对二氧化硅的辐射效应和表面变形”核仪器和物理研究方法 B. 第 191 卷。
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服部雅晴, 大木義路他: "マイクロイオンビームによるシリカガラスへの微細3次元構造形成と評価"第11回TIARA研究発表会. 101-102 (2002)
Masaharu Hattori、Yoshichi Oki 等人:“使用微离子束在石英玻璃上形成精细三维结构”第 11 届 TIARA 研究会议(2002 年)。
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