Growth History of III-V Compound Crystals by IR Light Scattering Tomograpyhy

红外光散射断层扫描 III-V 族化合物晶体的生长历史

• 批准号: 61460238
• 负责人: OGAWA Tomoya
• 金额: $ 3.9万
• 依托单位: Gakushuin University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for General Scientific Research (B)
• 财政年份: 1986
• 资助国家: 日本
• 起止时间: 1986 至 1987
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-61460238/
• 关键词: Light scattering tomography; Infrared light scattering; III-V compounds; Lattice Defects; 光散乱トモグラフィー; 光散乱

Defects in crystals are marks and signs which have been introduced during crystal growth and then indicate how the crystals have been grown. Of course, the defects should be extracted from the crystals but we can use the defects to analyze growth mechanism of crystals by detecting distribution, sort and size of the defects. Or we can say that the study of the growth history is only one way to get well qualified crystals.Optical property of matters do not depend directly upon the atomic numbers of their composite elements but absorption coefficient of x-rays is directly proportional to the atomic number of composite elements. Therefore, infrared (IR) light scattering, which will be caused by density fluctuation of electron densities polarized by IR radiations, is much better than x-ray diffraction if the crystals to be studied are composed of heavy elements. The density fluctuation of electrons will be caused by lattice defects such as dislocations, inclusions and voids and thus we can detect the defects by IR light scattering.

晶体中的缺陷是在晶体生长过程中引入的标记和符号，然后指示晶体是如何生长的。当然，晶体中的缺陷是必须提取出来的，但是我们可以通过检测缺陷的分布、种类和大小来分析晶体的生长机制。物质的光学性质与其组成元素的原子序数没有直接关系，但x射线的吸收系数与组成元素的原子序数成正比。因此，如果要研究的晶体是由重元素组成的，则由红外辐射极化的电子密度的密度波动引起的红外（IR）光散射比X射线衍射好得多。位错、夹杂物和空洞等晶格缺陷会引起电子密度波动，因此我们可以通过红外光散射来检测缺陷。

项目成果

Tomoya Ogawa: "A comment on defects n GaAs crystals obseved by infrared light scattering tomography and IR absorption microscopy," Japan. J. Applied Physics,. 25. L916-L917 ((1986))

Tomoya Okawa：“对通过红外光散射断层扫描和红外吸收显微镜观察到的 GaAs 晶体缺陷的评论”，日本。

Tomoya OGAWA: Japanese Journal of Applied Physics. 26. L916-L917 (1986)

小川朋也：日本应用物理学杂志。

Tomoya Ogawa: "Dislocation lines in In-doped GaAs crystals observed by infrared light scattering tomography of about 1 um wavelength radiations," J. Crystal Growth,. 86. ((1988))

Tomoya Okawa：“通过约 1 um 波长辐射的红外光散射断层扫描观察到 In 掺杂 GaAs 晶体中的位错线”，J. Crystal Growth，。

Tomoya Ogawa: J. Crystal Growth. 83. (1988)

小川朋也：J.晶体生长。

T.Katsumata;H.Okada;T.Kikuta;T.Fukuda;Tomoya OGAWA: "Semi-insulating 【III】-【V】 compouds" Ohmsha,Noth Holland, 6 (1986)

T.Katsumata；H.Okada；T.Kikuta；T.Fukuda；Tomoya OGAWA：“半绝缘 [III]-[V] 化合物” Ohmsha，Noth Holland，6 (1986)