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Characterization of and detection of defects in semiconductor crystals by infrared light scattering tomography

通过红外光散射断层扫描表征和检测半导体晶体中的缺陷

基本信息

批准号：
04402018
负责人：
OGAWA Tomoya
金额：
$ 11.14万
依托单位：
Department of Physics, Gakushuin University
依托单位国家：
日本
项目类别：
Grant-in-Aid for General Scientific Research (A)
财政年份：
1992
资助国家：
日本
起止时间：
1992 至 1994
项目状态：
已结题

项目摘要

Defects in crystals, such as dislocations, stacking faults, segregated impurities and interstitial atoms, will induce scattered light with disordered phases according to their disordered positions, because all atoms radiate from their dipoles generated by illumination of a laser beam.Since electrical characteristics of GaAs crystals is strongly dependent upon EL2 centers, their density and distribution must be controlled and adjusted for opto-electric and high electron mobility devices, where infrared light scattering tomography (IR-LST) is very useful for these processing because the centers are clearly observed by IR-LST.Dispersions of the absorption and scattering due to EL2 centers are caused by resonance of electrons trapped in the EL2 centers.Since ZnSe crystal is one of the most promising candidates for blue lasers, detection of defects in and characterization of the crystals are successfully done by LST and Raman scattering tomography (RST). Here, a new habit of dislocations wa … More s observed by LST : many dislocations were piled up within thin layrs on (111) planes of the crystals, which are called "DISLOCATION WALLS".Density and distribution of intrinsic gettering (IG) centers and quality of denuded zones in Cz-Si wafers are very important for planar devices on wafer surfaces because a sigle crystalline layr is epitaaxially grown on the denuded zone, which is, therefore, the most important key factors.The defects located just under a mirror polished surface are very harmful for the epitaxial growth, even if they were very tiny and few. Here we have developed an inside total reflection (ITR) method to clearly and accurately detect the defects and interstitial oxygen atoms there, because only the light scattered by the defects and interstitial atoms can pass through the mirror surface since this light impinges ontothe surface with angles smaller than the total reflection angle while the total reflection prevents the main part of the laser beam from passing through. Less

晶体中的缺陷，如位错、层错、偏析杂质和间隙原子等，由于所有的原子都是从激光照射产生的偶极子上辐射出来的，所以在光电和高电子迁移率器件中，必须控制和调节它们的密度和分布，这些缺陷会根据它们的无序位置诱导出具有无序相的散射光。其中红外光散射层析(IR-LST)是非常有用的，因为红外光散射层析(IR-LST)可以清楚地观察到中心。由于EL2中心的吸收和散射的色散是由捕获在EL2中心的电子的共振引起的。由于ZnSe晶体是最有希望的蓝光激光器候选晶体之一，LST和拉曼散射层析成像(RST)成功地完成了对晶体中缺陷的检测和表征。在这里，位错的一个新习惯是Wa…用LST观察到更多的S：许多位错堆积在晶体的(111)面上的薄层内，被称为“位错壁”。硅片中本征吸杂(IG)中心的密度和分布以及剥离区的质量对硅片表面的平面器件非常重要，因为在剥离区外延生长的是单晶层，因此这是最重要的关键因素。位于镜面抛光表面下的缺陷对外延生长非常有害，即使它们非常微小和很少。在这里，我们发展了一种内部全反射(ITR)方法来清楚和准确地检测那里的缺陷和间隙氧原子，因为只有缺陷和间隙原子散射的光才能穿过镜面，因为这种光以小于全反射角的角度入射到镜面上，而全反射阻止了激光的主要部分通过。较少