Characterization of and detection of defects in semiconductor crystals by infrared light scattering tomography
Characterization of and detection of defects in semiconductor crystals by infrared light scattering tomography
批准号:
04402018
负责人:
OGAWA Tomoya
金额:
$11.14万
依托单位国家:
日本
项目类别:
Grant-in-Aid for General Scientific Research (A)
财政年份:
1992
资助国家:
日本
项目状态:
已结题
起止时间:
1992 至 1994
中文摘要
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英文摘要
Defects in crystals, such as dislocations, stacking faults, segregated impurities and interstitial atoms, will induce scattered light with disordered phases according to their disordered positions, because all atoms radiate from their dipoles generated by illumination of a laser beam.Since electrical characteristics of GaAs crystals is strongly dependent upon EL2 centers, their density and distribution must be controlled and adjusted for opto-electric and high electron mobility devices, where infrared light scattering tomography (IR-LST) is very useful for these processing because the centers are clearly observed by IR-LST.Dispersions of the absorption and scattering due to EL2 centers are caused by resonance of electrons trapped in the EL2 centers.Since ZnSe crystal is one of the most promising candidates for blue lasers, detection of defects in and characterization of the crystals are successfully done by LST and Raman scattering tomography (RST). Here, a new habit of dislocations wa … More s observed by LST : many dislocations were piled up within thin layrs on (111) planes of the crystals, which are called "DISLOCATION WALLS".Density and distribution of intrinsic gettering (IG) centers and quality of denuded zones in Cz-Si wafers are very important for planar devices on wafer surfaces because a sigle crystalline layr is epitaaxially grown on the denuded zone, which is, therefore, the most important key factors.The defects located just under a mirror polished surface are very harmful for the epitaxial growth, even if they were very tiny and few. Here we have developed an inside total reflection (ITR) method to clearly and accurately detect the defects and interstitial oxygen atoms there, because only the light scattered by the defects and interstitial atoms can pass through the mirror surface since this light impinges ontothe surface with angles smaller than the total reflection angle while the total reflection prevents the main part of the laser beam from passing through. Less
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Ogawa: "Characterization of dielectric crystals by light scattering tomography" Ferroelectronics. 142. 19-29 (1993)
小川:“通过光散射断层扫描表征介电晶体”铁电子学。
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小川智哉: "Characterization of dielectric crystals by light scattering tomography" Ferroelectronics. 142. 19-29 (1993)
Tomoya Okawa:“通过光散射断层扫描表征介电晶体”铁电子学 142. 19-29 (1993)
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小川智哉: "Piled up dislocations in vapour phase grown ZnSe crystals" Philosophical Magazine. (in press). (1995)
Tomoya Okawa:“气相生长的 ZnSe 晶体中的堆积位错”哲学杂志(1995 年出版)。
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小川智哉: "Effect of human blood addition on dendritic growth of cupric chloride crystals in aqueous solutions" J.Crystal Growth. 142. 147-155 (1994)
Tomoya Okawa:“添加人体血液对水溶液中氯化铜晶体的枝晶生长的影响”J.Crystal Growth。142. 147-155 (1994)。
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共 36 条
Effects of Alkalizing Agents (THAM) on Ischemic Brain Injuries
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批准号:11671369
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项目类别:Grant-in-Aid for Scientific Research (C)
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资助金额:$1.34万
-
财政年份:1999
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负责人:OGAWA Tomoya
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依托单位:
Tomographic detection of micro-defects in semi-conductions due to light scattering and photoluminescence imaging
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批准号:10450011
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$9.73万
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财政年份:1998
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负责人:OGAWA Tomoya
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依托单位:
Structure and function of oligosaccharide of glycoprotein : Approach by recombinant technology and organic synthesis.
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批准号:07406016
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项目类别:Grant-in-Aid for Scientific Research (A)
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资助金额:$1.6万
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财政年份:1995
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负责人:OGAWA Tomoya
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依托单位:
Study on generation of glycoprotein by recombinant technology.
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批准号:06556058
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项目类别:Grant-in-Aid for Scientific Research (A)
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资助金额:$8.0万
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财政年份:1994
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负责人:OGAWA Tomoya
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依托单位:
A new fringe method for characterization of ROUGHNESS of inner layrs in semiconductor crystals and dielectric thin layrs
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批准号:04555006
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项目类别:Grant-in-Aid for Developmental Scientific Research (B)
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资助金额:$11.46万
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财政年份:1992
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负责人:OGAWA Tomoya
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依托单位:
Placental function and development of fetal nervous system.
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批准号:04304024
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项目类别:Grant-in-Aid for Co-operative Research (A)
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资助金额:$12.16万
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财政年份:1992
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负责人:OGAWA Tomoya
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依托单位:
Study on the biological roles of oligosaccharides : approach by analysis and organic synthesis of oligosaccharides.
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批准号:03404012
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项目类别:Grant-in-Aid for General Scientific Research (A)
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资助金额:$18.62万
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财政年份:1991
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负责人:OGAWA Tomoya
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依托单位:
Characterization of Epitaxial Layers and Ion-Implanted Surfaces on Semiconductor Wafers by Scattering of Light and Optical Surface Waves
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批准号:63460059
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项目类别:Grant-in-Aid for General Scientific Research (B)
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资助金额:$3.97万
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财政年份:1988
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负责人:OGAWA Tomoya
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依托单位:
Design and Prototype Construction of Infrared Resonance Scattering Tomography
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批准号:61850006
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项目类别:Grant-in-Aid for Developmental Scientific Research
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资助金额:$23.68万
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财政年份:1986
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负责人:OGAWA Tomoya
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依托单位:
Growth History of III-V Compound Crystals by IR Light Scattering Tomograpyhy
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批准号:61460238
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项目类别:Grant-in-Aid for General Scientific Research (B)
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资助金额:$3.9万
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财政年份:1986
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负责人:OGAWA Tomoya
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依托单位:
Growth interfaces of crystals
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批准号:58420019
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项目类别:Grant-in-Aid for General Scientific Research (A)
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资助金额:$12.74万
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财政年份:1983
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负责人:OGAWA Tomoya
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依托单位:
海外基金