Tomographic detection of micro-defects in semi-conductions due to light scattering and photoluminescence imaging

由于光散射和光致发光成像而导致的半导体微缺陷的断层扫描检测

• 批准号: 10450011
• 负责人: OGAWA Tomoya
• 金额: $ 9.73万
• 依托单位: Gakushuin University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 1998
• 资助国家: 日本
• 起止时间: 1998 至 1999
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-10450011/
• 关键词: Light Scattering Tomography; growth-in defects; Laser Scanning Tomography; elastic scattering; photoluminescence mapping; LST (Light Scattering Tomography); micro-defects; OSF (Oxidation Induced Stacking Faults); 光散乱トモグラフィー; 評価法; 半導体; 微小欠陥; 半導

Since the defect density in ordinary semiconductor crystals is fairly low, determination of the surveillance volume is very important to get correct information about defects in the crystals. Here the volume is defined as that to be searched by a single surveillance trial and should be equal to or a little larger than the reciprocal density of the defects.The following two-step investigation resulted in successful and novel use of an ordinary IR light scattering tomography (LST) instrument for this purpose. (1) The surveillance thickness of photoluminescence (PL) due to carriers optically injected by a laser beam for LST is usually much larger than that of the laser beam diameter for LST, because the carriers diffuse out emitting PL from the position illuminated by the beam. Thus PL mapping is very effective to search for low density defects in the crystals since the defects act as usually PL killer centers and, sometimes, recombination centers. (2) The intensity modulated positions in the PL mapping were carefully surveyed by layer-by-layer tomography using a finely focused laser beam.By complimentary combination of the above two methods the defects will be clearly observed.

由于普通半导体晶体中的缺陷密度相当低，因此确定监视体积对于获得关于晶体中缺陷的正确信息是非常重要的。这里的体积被定义为一个单一的监督试验搜索，并应等于或略大于缺陷的倒数density.The以下两个步骤的调查导致了成功的和新颖的使用一个普通的IR光散射层析成像（LST）仪器为此目的。(1)由于载流子从激光束照射的位置扩散出发射光致发光（PL），因此用于LST的由激光束光学注入的载流子引起的光致发光（PL）的监视厚度通常远大于用于LST的激光束直径。因此，PL映射是非常有效的搜索晶体中的低密度缺陷，因为这些缺陷通常作为PL杀手中心，有时，复合中心。(2)通过使用精细聚焦的激光束进行逐层层析成像，仔细地测量PL映射中的强度调制位置。通过上述两种方法的互补结合，可以清楚地观察到缺陷。

项目成果

N. Nango, S. Iida and T. Ogawa: "An optical study on dislocation clusters in a slowly pulled silicon crystal"J. Appl. Phys.. Vol.86, No.11. 6000-6004 (1999)

N. Nango、S. Iida 和 T. Okawa：“慢拉硅晶体中位错簇的光学研究”J。

N. Nango, S. Iida and T. Ogawa: "An optical study on dislocation clusters in a slowly pulled sillcon crystal"J. App. Phys.. 86. 6000-6004 (1999)

N. Nango、S. Iida 和 T. Okawa：“慢拉硅晶体中位错簇的光学研究”J。

M. Ma, N. Nango, T. Ogawa, M. Watanabe and M. Eguchi: "Study on defects in EMCZ-Si crystal by infrared scattering tomography"J. Cryst. Growth. 208. 282-288 (2000)

M. Ma、N. Nango、T. Okawa、M. Watanabe 和 M. Eguchi：“通过红外散射断层扫描研究 EMC​​Z-Si 晶体中的缺陷”J。

小川智哉: "結晶工学の基礎"裳華房. 326 (1998)

小川智也：“晶体工程基础”Shokabo 326 (1998)。

M. Ma, T. Ogawa, M. Watanabe and M. Eguchi: "Study on defects in CZ-Si crystals gown under three different cusp magnetic fields by infrared scattering tomography"J. Cryst. Growth. 205. 50-58 (1999)

M. Ma、T. Okawa、M. Watanabe 和 M. Eguchi：“红外散射断层扫描研究三种不同尖点磁场下 CZ-Si 晶体袍的缺陷”。