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Characterization of Epitaxial Layers and Ion-Implanted Surfaces on Semiconductor Wafers by Scattering of Light and Optical Surface Waves

通过光和光学表面波散射表征半导体晶圆上的外延层和离子注入表面

基本信息

批准号：
63460059
负责人：
OGAWA Tomoya
金额：
$ 3.97万
依托单位：
Department of Physics, Gakushuin University
依托单位国家：
日本
项目类别：
Grant-in-Aid for General Scientific Research (B)
财政年份：
1988
资助国家：
日本
起止时间：
1988 至 1989
项目状态：
已结题

项目摘要

Since surfaces of semiconductor wafers are most important for electronic devices, epitaxial growth and ion-implantation on them are keys to open doors for new intelligent devices by producing suitable perfection and conductivities.Here new methods were developed to detect and characterize defects in and on the epitaxial layers and ion-implanted regions by light scattering techniques.1. Optical surface waves are generated by the condition deviated slightly from the critical reflection at the surface, which propagate along the surface. The scattering caused by flaws and scratches. By the incident angle against the surface which is a little smaller than the angle for the surface waves, a guided waves will propagate inside the epitaxial layers or wafers as a guided wave.2. This phenomena was very effective for characterization of wafers when a laser beam can be impinged from the backside of wafer at the condition mentioned above or when both side of wafers were polished as mirrors. Unfortunately, most of wafers for devices are roughened by sandblast or metallized and then the other method will be developed for those wafers, where the laser beam will be impinged into the wafers from mirror polished top surface.3. The radiation damages caused by implanted-ions act as centers of Rayleigh scattering, which are detected by transmitted as well as by reflected light, clearly. The scattering from the damaged region will be detected and semi-quantitatively measured if the dose amount is more than 10 B 12. Here, detection and measurement are done from the top surface of wafers, which will be nicer than the other ordinary ways.

由于半导体晶片表面是电子器件的重要组成部分，在其上进行外延生长和离子注入可以产生合适的完整性和电导率，是打开新型智能器件大门的关键，本文发展了利用光散射技术检测和表征外延层和离子注入区缺陷的新方法.光学表面波是由表面处的临界反射稍微偏离的条件产生的，它沿表面沿着传播。由瑕疵和划痕引起的散射。通过相对于表面的入射角（其稍小于表面波的角度），导波将作为导波在外延层或晶片内部传播。当激光束在上述条件下从晶片背面照射时，或者当晶片的两面都被抛光为镜面时，这种现象对于晶片的表征是非常有效的。不幸的是，大多数器件的晶片都是通过喷砂或金属化来粗糙化的，然后将为这些晶片开发另一种方法，其中激光束将从镜面抛光的顶面入射到晶片中。由电离离子引起的辐射损伤是瑞利散射的中心，透射光和反射光都能清楚地探测到。如果剂量大于10 B 12，则将检测并半定量地测量来自损伤区域的散射。在这里，检测和测量是从晶圆的顶面，这将是比其他普通的方式更好。