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Design and Prototype Construction of Infrared Resonance Scattering Tomography

红外共振散射断层扫描的设计与样机构建

基本信息

批准号：
61850006
负责人：
OGAWA Tomoya
金额：
$ 23.68万
依托单位：
Department of Physics, Gakushuin University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Developmental Scientific Research
财政年份：
1986
资助国家：
日本
起止时间：
1986 至 1988
项目状态：
已结题

项目摘要

Since scattering intensity of IR light is dependent upon electronic polarization or displacement of electrons cause by the incident light, the light scattering from semiconductors will be classified into the following three items:1. the polarization induced by electrons traped in electronic centers and/OR defects in semiconductor crystals. Here, the electrons show restoring force against their displacement and then they have their own resonance frequencies which are determined by the mass and restoring force of the electrons.2. the polarization due to electrons in tiny particles inside semiconductors, which will show a resonance similar to the plasma resonance inside metal particles.3. Polarization due free carriers, which will mainly contribute to absorption because of no restoring force against displacement of electrons.The resonance mentioned above the category 1 and 2 will be observed if we abjust temperature of the specimens to be examind or frequency of incident IR light. Unfortunately, we don't have any tuneable laser in the frequency range of 1 micron.Here, the sample is installed in a cryostat which temperature is changed by a refrigerator from room temperature to 24K. The stability of the temperature is 0.1 K. Thus, we have clearly observed resonance type scattering from an In-doped GaAs crystal at 130 K by 1.15mu m radiation of a He-Ne Laser, which was confirmed experimentally.

由于红外光的散射强度取决于入射光引起的电子偏振或电子位移，因此半导体的光散射将分为以下三项：1.由俘获在半导体晶体中的电子中心和/或缺陷中的电子引起的极化。在这里，电子显示恢复力对他们的位移，然后他们有自己的共振频率，这是由电子的质量和恢复力。2.由于半导体内部微小颗粒中的电子的极化，这将显示出类似于金属颗粒内部等离子体共振的共振。由于自由载流子的极化，由于没有抵抗电子位移的恢复力，这将主要有助于吸收，如果我们改变待测样品的温度或入射红外光的频率，将观察到上述第1类和第2类共振。不幸的是，我们没有任何可调谐的激光器在1微米的频率范围内。在这里，样品被安装在低温恒温器，温度从室温到24 K的冰箱改变。温度稳定度为0.1K。因此，我们清楚地观察到掺In GaAs晶体在130 K下受1.15 μ m He-Ne激光辐照的共振型散射，并得到了实验证实。