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Epitaxial Growth of Diamond on Boron Containing Single Crystals

含硼单晶上金刚石的外延生长

基本信息

批准号：
04805003
负责人：
INUZUKA Tadao
金额：
$ 1.28万
依托单位：
Aoyama Gakuin University
依托单位国家：
日本
项目类别：
Grant-in-Aid for General Scientific Research (C)
财政年份：
1992
资助国家：
日本
起止时间：
1992 至 1993
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-04805003/
关键词：
Diamond Epitaxy CVD Thin film エピタキシー薄膜

项目摘要

Epitaxial growth of diamond on boron containing compoud such as cBN, BP, heavily boron doped Si, boron tailored Si surface has been performed using DC plasma CVD method. On most of the substrates, epitaxial growth cannot be observed except cBN.The reason of this fact is due to the surface damages by reaction of hydrogen under the higher substrate temperature and also the removal of born atoms existing on the surface by carbon atoms.At the initial growth stage of deposition on cBN (111) surface (boron surface), the very thin carbon layrts start to grow prior to the epitaxial growth of diamond islands. The Crystal structure of this layr is not known well at this moment. Considering the fact that diamond grows eptaxially on this thin layr, the structure of this thin later will be close to the structure of diamond.By SEM observation, it is found that this layr gives quite bright contrast. It is supposed that electrons will be emitted from the surface of the layr. We have tried the preliminary experiment of field emission of electrons The electron current from the carbon layr is relatively high compared with the current from molybdeum surface in the same sruface geometry. This electron emitter words quite stable for the long period experiment.We have fablicated the simple device working as a new electron emitter.

用直流等离子体化学气相沉积（DC Plasma CVD）方法，在含硼化合物（cBN、BP、重掺硼硅、硼修整硅）表面上外延生长金刚石。在大多数衬底上，除了cBN，不能观察到外延生长，这是由于在较高的衬底温度下氢的反应对表面的损伤以及碳原子对表面上存在的原生原子的去除造成的。在cBN（111）表面沉积的初始生长阶段，（硼表面），在金刚石岛的外延生长之前，非常薄的碳层开始生长。该层的晶体结构目前还不清楚。考虑到金刚石在该薄层上外延生长，该薄层的结构将接近金刚石的结构，通过扫描电镜观察，发现该薄层具有很强的反差。据推测，电子将从该层的表面发射出来。我们进行了电子场致发射的初步实验，在相同的表面几何形状下，从碳层发射的电子流比从金属表面发射的电子流高。这种电子发射体在长时间的实验中性能稳定，我们制作了一种简单的电子发射体。