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Control of solid-phase reaction dynamics and carbon engineering for nanofabrication of group-IV

IV族纳米加工的固相反应动力学和碳工程控制

基本信息

批准号：
15206004
负责人：
ZAIMA Shigeaki
金额：
$ 29.54万
依托单位：
Nagoya University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (A)
财政年份：
2003
资助国家：
日本
起止时间：
2003 至 2005
项目状态：
已结题

项目摘要

In this project, we investigated the control of the thin film growth and the interfacial reaction between heterogeneous materials by the incorporation of C in order to the development of the nanofabrication of future Si ULSI devices. The following results were obtained :(1) The effect of the C ion implantation on the crystalline and electrical properties of NiSi/Si(001) contacts has been investigated. The C implantation with a dose higher than 3×10^<14> cm^<-2> is effective to suppress the agglomeration of NiSi layers, and to prevent the increase in the sheet resistance of NiSi layers even after annealing at 750℃.(2) The contact resistance of the NiSi/p^+-Si interface can be reduced by the C ion implantation with a dose of 3×10^<15> cm^<-2>. The redistribution of B atoms at the interface during the NiSi formation is suppressed with the incorporation of C, and the pile-up of B toward the interface is enhanced. As a result, the carrier concentration at the interface in the sample with C is higher than that without C, which leads to the reduction of the contact resistance.(3) The effect of C on the initial growth of epitaxial NiSi_2 layers on Si(100) substrates has been investigated with the STM observation. The incorporation of C is effective to suppress the formation of {111} facets at the epitaxial NiSi_2/Si interface, and to enhance the isotropic growth of individual domains of epitaxial NiSi_2 islands. As a result, the flatness and the coverage of epitaxial NiSi_2 layers are improved with increasing the amount of deposited C atoms.(4) The initial growth of Ge_<1-x>C_x layers on Si(001) substrates with the codeposition and the alternate deposition of Ge and C has been investigated with the STM observation. The Si-C bonds properly distributed on the surface are effective to suppress the formation of C cluster and the growth of Ge 3D islands, which leads to the homogeneous growth of Ge_<1-x>C_x layers.

在本项目中，我们研究了C掺杂对薄膜生长和异质材料界面反应的控制，以期为未来硅ULSI器件的纳米制造奠定基础。主要研究结果如下：(1)研究了C离子注入对NiSi/Si(001)接触的晶体和电学性质的影响。剂量大于3×10^-lt；14-gt；cm-2-gt；-2的C离子注入能有效地抑制NiSi层的团聚，并防止NiSi层方块电阻的增加，即使在750℃下也是如此。(2)3×10^-lt；15-cm^-gt；-2&gt；C的加入抑制了NiSi形成过程中B原子在界面的再分布，促进了B向界面的堆积。结果表明，含C样品的界面载流子浓度高于不含C样品的界面载流子浓度，降低了接触电阻。(3)通过STM观察，研究了含C样品对Si(100)衬底上NiSi2外延层初始生长的影响。C的掺入有效地抑制了NiSi2/Si外延界面上{111}面的形成，促进了NiSi2外延岛的各向同性生长。结果表明，随着C原子沉积量的增加，NiSi2外延层的平坦度和覆盖率都有所提高。(4)用扫描隧道显微镜观察了Ge&lt；1-x&Gt；Cx层在Si(001)衬底上的初始生长以及Ge和C的交替沉积。表面适当分布的Si-C键有效地抑制了C团簇的形成和Ge 3d岛的生长，导致了Ge&lt；1-x&Gt；Cx层的均匀生长。