Control of solid-phase reaction dynamics and carbon engineering for nanofabrication of group-IV

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In this project, we investigated the control of the thin film growth and the interfacial reaction between heterogeneous materials by the incorporation of C in order to the development of the nanofabrication of future Si ULSI devices. The following results were obtained :(1) The effect of the C ion implantation on the crystalline and electrical properties of NiSi/Si(001) contacts has been investigated. The C implantation with a dose higher than 3×10^<14> cm^<-2> is effective to suppress the agglomeration of NiSi layers, and to prevent the increase in the sheet resistance of NiSi layers even after annealing at 750℃.(2) The contact resistance of the NiSi/p^+-Si interface can be reduced by the C ion implantation with a dose of 3×10^<15> cm^<-2>. The redistribution of B atoms at the interface during the NiSi formation is suppressed with the incorporation of C, and the pile-up of B toward the interface is enhanced. As a result, the carrier concentration at the interface in the sample with C is higher than that without C, which leads to the reduction of the contact resistance.(3) The effect of C on the initial growth of epitaxial NiSi_2 layers on Si(100) substrates has been investigated with the STM observation. The incorporation of C is effective to suppress the formation of {111} facets at the epitaxial NiSi_2/Si interface, and to enhance the isotropic growth of individual domains of epitaxial NiSi_2 islands. As a result, the flatness and the coverage of epitaxial NiSi_2 layers are improved with increasing the amount of deposited C atoms.(4) The initial growth of Ge_<1-x>C_x layers on Si(001) substrates with the codeposition and the alternate deposition of Ge and C has been investigated with the STM observation. The Si-C bonds properly distributed on the surface are effective to suppress the formation of C cluster and the growth of Ge 3D islands, which leads to the homogeneous growth of Ge_<1-x>C_x layers.