Research of Multiple-Input and Multiple-Output Functional Devices by Means of Nanodot Array

提出了一种利用纳米点阵列实现多输出、多输出的柔性逻辑器件。首先通过仿真验证了其工作原理是一种灵活的逻辑器件。然后，我们实际制作了硅纳米点阵器件，并展示了传统器件从未有过的更高功能。此外，为了获得更小的纳米点，我们开发了金属纳米点阵列形成技术。考虑单电子随机隧穿的模拟我们搭建了一个蒙特卡罗模拟器，以确认纳米点阵列器件作为一种灵活的逻辑器件的基本操作。我们阐明了该器件是一个多输入逻辑门，其功能可以通过控制门电压来改变。硅纳米点阵列器件的制备及其电学特性的评价我们采用传统的cmos工艺制作了硅纳米点阵列器件，其中的关键工艺是电子束刻蚀…更多的APY和Si的热氧化。我们制作了2×2纳米点阵列，并连接了两个小的输入门，它们与阵列中的纳米点电容耦合。最后，我们在器件的顶部附加了一个大的控制栅极，以便与所有的纳米点耦合。我们实现了通过改变控制栅极电压来获得所有六个重要的两输入逻辑功能的高功能性。我们还实现了作为多输入多输出设备的操作的可能性，这是使用传统设备无法实现的。金属-纳米点阵列的形成我们研究了获得小于十纳米点尺寸的金属纳米点阵列的制备技术。我们还研究了使用铁磁性金属点的阵列。这种器件被认为是一种自旋相关的隧道器件，其中隧道几率通过点之间的耦合或栅极电压来改变，这可能使我们能够使用一种新的附加功能。我们实现了具有几个纳米点大小的二维金属纳米点阵列。较少

We proposed a new flexible logic device which has multi-outputs and multi-outputs by means of a nanodot array. We first confirmed the operation principle as a flexible logic device by simulation. Then, we actually fabricated Si nanodot-array devices, and demonstrated the higher functionalities that conventional devices have never had. In addition, we developed the metal-nanodot-array-formation techniques in order to achieve smaller nanodots.1. Simulation taking account of stochastic tunneling of single electronWe built a Monte-Carlo simulator in order to confirm the basic operation of the nanodot-array device as a flexible logic device.We clarified that the device operates as a multi-input logic gate whose function can be changed by the control gate voltage.2. Si nanodot-array device fabrication and the evaluation of their electrical characteristicsWe fabricated Si nanodot-array devices using conventional CMOS fabrication technology, in which the key processes are electron-beam lithogr … More aphy and thermal oxidation of Si. We made 2x2 nanodot arrays and attached two small input gates which coupled capacitively with nanodots in the array. Finally, we attached a big control gate on top of the device so as to be coupled with all the nanodots. We achieved the high functionality in which we can obtain all six important two-input logic functions by changing the control-gate voltage. We also achieved a possibility of an operation as a multi-input and multi-output device, which cannot be attained by the use of conventional devices.3. Metal-nanodot-array formationWe investigated fabrication technologies for getting small metal nanodot arrays which have sub-ten-nanometer dot sizes. We also investigated the arrays which use ferromagnetic metal dots. The device is expected as a spin-dependent tunneling device, in which the tunneling probability is changed by the coupling among the dots or gate voltage, which may enable us to use a new additional functionality. We achieved two-dimensional metal nanodot arrays which have a few nanometer-dot sizes. Less