权益分类	功能权益	普通用户	{{item.name}}会员
{{category.name}}	{{benefitItem.name}}

Research of Multiple-Input and Multiple-Output Functional Devices by Means of Nanodot Array

纳米点阵列多输入多输出功能器件的研究

基本信息

批准号：
17201029
负责人：
TAKAHASHI Yasuo
金额：
$ 32.78万
依托单位：
Hokkaido University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (A)
财政年份：
2005
资助国家：
日本
起止时间：
2005 至 2007
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-17201029/
关键词：
Device with Few Electron Regime Quantum Dots Low Power Consumption Electron Devices&Systems Nano Materials Silicon Integrated Devices Flexible Logic Gats

项目摘要

We proposed a new flexible logic device which has multi-outputs and multi-outputs by means of a nanodot array. We first confirmed the operation principle as a flexible logic device by simulation. Then, we actually fabricated Si nanodot-array devices, and demonstrated the higher functionalities that conventional devices have never had. In addition, we developed the metal-nanodot-array-formation techniques in order to achieve smaller nanodots.1. Simulation taking account of stochastic tunneling of single electronWe built a Monte-Carlo simulator in order to confirm the basic operation of the nanodot-array device as a flexible logic device.We clarified that the device operates as a multi-input logic gate whose function can be changed by the control gate voltage.2. Si nanodot-array device fabrication and the evaluation of their electrical characteristicsWe fabricated Si nanodot-array devices using conventional CMOS fabrication technology, in which the key processes are electron-beam lithogr … More aphy and thermal oxidation of Si. We made 2x2 nanodot arrays and attached two small input gates which coupled capacitively with nanodots in the array. Finally, we attached a big control gate on top of the device so as to be coupled with all the nanodots. We achieved the high functionality in which we can obtain all six important two-input logic functions by changing the control-gate voltage. We also achieved a possibility of an operation as a multi-input and multi-output device, which cannot be attained by the use of conventional devices.3. Metal-nanodot-array formationWe investigated fabrication technologies for getting small metal nanodot arrays which have sub-ten-nanometer dot sizes. We also investigated the arrays which use ferromagnetic metal dots. The device is expected as a spin-dependent tunneling device, in which the tunneling probability is changed by the coupling among the dots or gate voltage, which may enable us to use a new additional functionality. We achieved two-dimensional metal nanodot arrays which have a few nanometer-dot sizes. Less

我们提出了一种新的灵活的逻辑器件，它具有多个输出端和多个输出端的纳米点阵列的手段。我们首先通过仿真确认了作为柔性逻辑器件的工作原理。然后，我们实际制作了硅纳米点阵列器件，并展示了传统器件从未有过的更高功能。此外，我们发展了金属纳米点阵列形成技术，以获得更小的纳米点.考虑单电子随机隧穿效应的模拟为了证实纳米点阵列器件作为柔性逻辑器件的基本工作原理，我们建立了一个蒙特-卡罗模拟器，阐明了该器件作为一个多输入逻辑门工作，其功能可以通过控制门电压来改变.硅纳米点阵列器件的制备及其电学特性的评价我们采用传统的CMOS工艺制备了硅纳米点阵列器件，其中的关键工艺是电子束光刻， ...更多信息硅的氧化和热氧化。我们制作了2 × 2纳米点阵列，并附加了两个小的输入门，其将电容器与阵列中的纳米点耦合。最后，我们在器件顶部附加了一个大的控制栅极，以便与所有的纳米点耦合。我们实现了高功能，其中我们可以通过改变控制栅极电压获得所有六个重要的双输入逻辑功能。我们还实现了作为多输入和多输出设备的操作的可能性，这是通过使用常规设备无法实现的。金属纳米点阵列的形成我们研究了获得具有亚十纳米点尺寸的小金属纳米点阵列的制造技术。我们还研究了使用铁磁金属点的阵列。该器件被认为是自旋相关的隧穿器件，其中隧穿概率通过点之间的耦合或栅极电压来改变，这可能使我们能够使用新的附加功能。我们实现了具有几个纳米点尺寸的二维金属纳米点阵列。少