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Research of Multiple-Input and Multiple-Output Functional Devices by Means of Nanodot Array

Research of Multiple-Input and Multiple-Output Functional Devices by Means of Nanodot Array
纳米点阵列多输入多输出功能器件的研究
批准号:
17201029
负责人:
TAKAHASHI Yasuo
金额:
$32.78万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (A)
财政年份:
2005
资助国家:
日本
项目状态:
已结题
起止时间:
2005 至 2007

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中文摘要
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英文摘要
We proposed a new flexible logic device which has multi-outputs and multi-outputs by means of a nanodot array. We first confirmed the operation principle as a flexible logic device by simulation. Then, we actually fabricated Si nanodot-array devices, and demonstrated the higher functionalities that conventional devices have never had. In addition, we developed the metal-nanodot-array-formation techniques in order to achieve smaller nanodots.1. Simulation taking account of stochastic tunneling of single electronWe built a Monte-Carlo simulator in order to confirm the basic operation of the nanodot-array device as a flexible logic device.We clarified that the device operates as a multi-input logic gate whose function can be changed by the control gate voltage.2. Si nanodot-array device fabrication and the evaluation of their electrical characteristicsWe fabricated Si nanodot-array devices using conventional CMOS fabrication technology, in which the key processes are electron-beam lithogr … More aphy and thermal oxidation of Si. We made 2x2 nanodot arrays and attached two small input gates which coupled capacitively with nanodots in the array. Finally, we attached a big control gate on top of the device so as to be coupled with all the nanodots. We achieved the high functionality in which we can obtain all six important two-input logic functions by changing the control-gate voltage. We also achieved a possibility of an operation as a multi-input and multi-output device, which cannot be attained by the use of conventional devices.3. Metal-nanodot-array formationWe investigated fabrication technologies for getting small metal nanodot arrays which have sub-ten-nanometer dot sizes. We also investigated the arrays which use ferromagnetic metal dots. The device is expected as a spin-dependent tunneling device, in which the tunneling probability is changed by the coupling among the dots or gate voltage, which may enable us to use a new additional functionality. We achieved two-dimensional metal nanodot arrays which have a few nanometer-dot sizes. Less
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Lorentz TEM observation of NiFe/Cu/NiFe
NiFe/Cu/NiFe 的洛伦兹 TEM 观察
DOI: --
发表时间: 2007
期刊:
影响因子: --
作者: [T. Fujii, A. Murakami, K. Hamada, M. Arita, Y. Takahashi]
通讯作者: Y. Takahashi
Silicon Single-Charge Transfer Devices
硅单电荷转移器件
DOI: --
发表时间: 2008
期刊: Journal of Physics and Chemistry of Solid 69
影响因子: --
作者: [H.W., Liu, 小野 行徳]
通讯作者: 小野 行徳
Field-Effect Transistor with Deposited Graphite Thin Film
具有沉积石墨薄膜的场效应晶体管
DOI: --
发表时间: 2007
期刊: Japanese Journal of Applied Physics 46
影响因子: --
作者: [J.-F., Morizu, 猪川 洋]
通讯作者: 猪川 洋
Infrared detection with silicon nano transistors
使用硅纳米晶体管进行红外探测
DOI: --
发表时间: 2007
期刊: Applied Physics Letters 90
影响因子: --
作者: [Daniel, Moraru, 西口 克彦]
通讯作者: 西口 克彦
215
    Japanese medieval cities in Eurasia
    Multi-input and multi-output flexible nanodot-array devices operating with multiple valued ReRAM
    • 批准号:
      24360128
    • 项目类别:
      Grant-in-Aid for Scientific Research (B)
    • 资助金额:
      $11.9万
    • 财政年份:
      2012
    • 负责人:
      TAKAHASHI Yasuo
    • 依托单位:
    Creation of Ryukyu architectural history
    • 批准号:
      24656362
    • 项目类别:
      Grant-in-Aid for Challenging Exploratory Research
    • 资助金额:
      $2.5万
    • 财政年份:
      2012
    • 负责人:
      TAKAHASHI Yasuo
    • 依托单位:
    Spatial structure of the capital in East Asia Middle Ages
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