Study of novelphase transition on the anisotropic Kondo semiconductor with caged structure

笼形结构各向异性近藤半导体新型相变研究

• 批准号: 23840033
• 负责人: MURO Yuji
• 金额: $ 2万
• 依托单位: Toyama Prefectural University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Research Activity Start-up
• 财政年份: 2011
• 资助国家: 日本
• 起止时间: 2011 至 2012
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-23840033/
• 关键词: 物性実験; 近藤半導体; 反強磁性; 中性子散乱; 元素置換効果; 希土類; 新奇な相転移; カゴ状構造

Ternary Ce compounds CeT2Al10(T=Ru and Os) are new Kondo semiconductors which undergo an antiferromagnetic transition. The mechanism of the antiferromagnetic transition in CeT2Al10is expected to be different with typical Ce antiferromagnets because of extraordinary high transition temperature 27K for T=Ru and 28.5K for T=Os. In order to clarify the novel antiferromagnetic transition, we performed the study of neutron scattering, photoemission and substitution effect on T and Al. From this study, the magnetic transition in CeT2Al10should originate from unique electronic structure and the anisotropy of c-f hybridization.

三元Ce化合物CeT2Al10(T=Ru和Os)是一种经历反铁磁相变的新型近藤半导体。CeT2Al10的反铁磁转变机制可能与典型的Ce反铁磁体不同，因为T=Ru的转变温度高达27K，T=Os的转变温度高达28.5K。为了阐明这种新的反铁磁相变，我们对T和Al的中子散射、光电子能谱和取代效应进行了研究。根据本研究，CeT2Al10的磁相变应源于其独特的电子结构和c-f杂化的各向异性。

项目成果

Pressure effect on the anomalous phase transition in CeOs_2Al_<10>

压力对CeOs_2Al_<10>反常相变的影响

• DOI: 10.1143/jpsj.80.064709
• 发表时间: 2011
• 期刊: J.Phys.Soc.Jpn.
• 作者: 高橋雅裕;桂法称;甲元眞人;高麗徹;籾原幸二;K.Umeo
• 通讯作者: K.Umeo

Anisotropic gap formation in CeM2Al10 (M = Ru, Os)

CeM2Al10 中各向异性间隙的形成（M = Ru、Os）

• DOI: 10.1088/1742-6596/391/1/012030
• 发表时间: 2012
• 期刊: J. Phys.: Conf. Ser.
• 作者: Koji Momihara;Miwako Mishima;Masakazu Jimbo;中筋麻貴;高橋雅裕;S. Kimura
• 通讯作者: S. Kimura

Structural and magnetic transitions in the crystalline approximant Cd_6Sm

晶体近似 Cd_6Sm 中的结构和磁转变

• DOI: 10.1103/physrevb.85.014203
• 发表时间: 2011
• 期刊: Phys.Rev.B
• 作者: M.Shibata;et al;R.Tamura
• 通讯作者: R.Tamura

Fe substitution effect on the phase transition and hybridization gap in CeOs2Al10

Fe替代对CeOs2Al10相变和杂化间隙的影响

• DOI: 10.1088/1742-6596/391/1/012049
• 发表时间: 2012
• 期刊: J. Phys.: Conf. Ser.
• 作者: M.Takahashi;H.Katsura;M.Kohmoto;T.Koma;中筋麻貴;吉岡瑞樹;M. Takahashi;Y. Muro
• 通讯作者: Y. Muro

Crystal field ground state of the orthorhombic Kondo semiconductors CeOs2Al10 and CeFe2Al10

正交晶系近藤半导体 CeOs2Al10 和 CeFe2Al10 的晶场基态

• DOI: 10.1103/physrevb.87.125119
• 发表时间: 2013
• 期刊: Physical Review B
• 影响因子: 3.7
• 作者: F. Strigari;T. Willers;Y. Muro;K. Yutani;T. Takabatake;S. Agrestini;C.-Y. Kuo;Y.-Y. Chin;H.-J. Lin;T. W. Pi;C.T. Chen;E. Weschke;E. Schierle;A. Tanaka;M. W. Haverkort L. H. Tjeng;A. Severing
• 通讯作者: A. Severing