Measurement Condition on True Atomic Resolution Imaging of Noncontact Atomic Force Microscope
Measurement Condition on True Atomic Resolution Imaging of Noncontact Atomic Force Microscope
批准号:
11450018
负责人:
SUGAWARA Yasuhiro
金额:
$8.64万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (B).
财政年份:
1999
资助国家:
日本
项目状态:
已结题
起止时间:
1999 至 2000
中文摘要
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英文摘要
In this project, we investigated the force interactions between a Si tip and Si(111)√<3>×√<3>-Ag surface, susing noncontact atomic force microscopy (AFM) operating in ultrahigh vacuum (UHV) by using Si and Ag-adsorped tips. By using Si tip, AFM images on Si(111)√<3>×√<3>-Ag surface showed three types of contrasts which depended on the distance between a tip and a sample surface. At the tip-sample distance of about 0.1 -0.3nm, AFM image showed the honeycomb arrangement. At the tip-sample distance of about 0- 0.05nm, the images showed the periodic structure of the triangle consisting of three bright spots with relatively strong contrast. On the other hand, at the distance of 0.05-0.lnm, the image contrast seemed to be the synthesis of the above two types of contrasts. When the tip is far from the sample surface, the tip-sample interaction force is dominated by physical bonding interaction such as the Coulomb force and/or the van der Waals (vdW) force between the tip apex Si atom and Ag trimer on the sample surface. On the other hand, just before the contact, the tip-sample interaction force is dominated by the chemical bonding interaction due to hybridization between the dangling bond out of the tip apex Si atom and the orbit of Si-Ag covalent bond on the surface. By using Ag-adsorbed tip, different image contrast was obtained and no its deitance dependence was observed. For the first time, individual Ag atoms on the surface was observed with atomic resolution. These experimental results suggest that the identification of the atom species is possible by using AFM.
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Y.Sugawara et. al.: "True atomic resolution imaging of surface structure and surface change on the GaAs(110)"Appl.Sur.Sci.. 140・3-4. 371-375 (1999)
Y.Sukawara 等人:“GaAs(110) 上的表面结构和表面变化的真实原子分辨率成像”Appl.Sur.Sci. 140・3-4 (1999)。
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通讯作者:
T.Uchihashi, M.Ashino, T.Ishida, Y.Sugawara, M.Komiyama, W.Mizutani, Y.Yokoyama, S.Morita, H.Tokumoto and M.Ishikawa: "High Resolution Imaging of Organic Monolayers Using Noncontact AFM"Appl.Sur.Sci. Vol.157, No.4. 244-250 (2000)
T.Uchihashi、M.Ashino、T.Ishida、Y.Sugara、M.Komiyama、W.Mizutani、Y.Yokoyama、S.Morita、H.Tokumoto 和 M.Ishikawa:“使用非接触式 AFM 进行有机单分子层的高分辨率成像
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T.Uchihashi, M.Tanigawa, M.Ashino, Y.Sugawara, K.Yokoyama, S.Morita and M.Ishikawa: "Identification of B-form DNA in an Ultrahigh Vacuum by Noncontact-mode Atomic Force Microscopy"Langmuir. Vol.16, No.3. 1349-1353 (2000)
T.Uchihashi、M.Tanikawa、M.Ashino、Y.Sugara、K.Yokoyama、S.Morita 和 M.Ishikawa:“通过非接触模式原子力显微镜在超高真空中鉴定 B 型 DNA”Langmuir。
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森田清三、菅原康弘: "ナノ力学に基づいた原子分子技術(In press)"生産と技術. 52・2. (2000)
森田征三、菅原泰宏:“基于纳米力学的原子和分子技术(正在出版)”52・2。
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S.Morita and Y.Sugawara: "Microscopic Contact Charging and Dissipation"Thin Solid Films. (In press). (2001)
S.Morita 和 Y.Sukawara:“微观接触充电和耗散”固体薄膜。
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共 70 条
Assembly of nanostructure on insulating surfaces and investigation of gas reaction mechanism using atomic force microscopy
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atomic and molecular manipulation and fabrication of nano-strucure using atomic force microscopy
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Measurement Condition for Atomic Resolution imaging on Reactive Surfaces Using Atomic Force Microscopy
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财政年份:1996
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负责人:SUGAWARA Yasuhiro
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Study on True Atomic Resolution Imaging Using Noncontact Atomic Force Microscopy
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依托单位:
海外基金