Plasma Anisotropic CVD for Cu Interconnects in LSI

LSI 中铜互连的等离子体各向异性 CVD

基本信息

  • 批准号:
    14350021
  • 负责人:
  • 金额:
    $ 9.54万
  • 依托单位:
  • 依托单位国家:
    日本
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
  • 财政年份:
    2002
  • 资助国家:
    日本
  • 起止时间:
    2002 至 2003
  • 项目状态:
    已结题

项目摘要

We have realized anisotropic deposition of Cu, for which Cu is filled preferentially from the bottom of trenches without being deposited on their sidewall, using H-assisted plasma chemical vapor deposition. The anisotropic deposition has two interesting features. One is the fact that the narrower the width of trench is, the faster the deposition rate on its bottom becomes. The other is the self-limiting characteristic that the deposition in the trench stops automatically just after filling completely it. Such type of deposition has a potential to overcome common problems associated with conformal filling : a small crystal grain size below a half of the trench width, and formation of a seam with residual impurities of relatively high concentration.
我们利用H辅助等离子体化学气相沉积实现了Cu的各向异性沉积,其中Cu优先从沟槽底部填充,而不沉积在沟槽侧壁上。各向异性沉积有两个有趣的特征。一是沟槽的宽度越窄,其底部的沉积速率就越快。另一个是自限性特性,即沟槽完全充满后,沉积自动停止。这种类型的沉积有可能克服与保形填充相关的常见问题:低于沟槽宽度一半的小晶粒尺寸,以及形成具有相对高浓度的残余杂质的接缝。

项目成果

期刊论文数量(78)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
Kosuke Takenaka, Manabu Takeshita, Kazunori Koga, Masaharu Shiratani, Yukio Watanabe: "Conformal and Anisotropic Deposition of Cu in Trenches by using H-Assisted Plasma CVD Method"Proc.International Symposium on Information Science and Electrical Engineer
Kosuke Takenaka、Manabu Takeshita、Kazunori Koga、Masaharu Shiratani、Yukio Watanabe:“利用 H 辅助等离子体 CVD 方法在沟槽中进行 Cu 的保形和各向异性沉积”Proc.International Symposium on Information Science and Electrical Engineer
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    0
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Kosuke Takenaka, Manabu Takeshita, Kazunori Koga, Masaharu Shiratani, Yukio Watanabe: "Residual Stress in Cu Films Deposited by H-Assisted Plasma CVD Using Cu(EDMDD)_2"Proc.2003 International Symposium on Dry Process. 231-236 (2003)
Kosuke Takenaka、Manabu Takeshita、Kazunori Koga、Masaharu Shiratani、Yukio Watanabe:“使用 Cu(EDMDD)_2 通过 H 辅助等离子体 CVD 沉积的铜膜中的残余应力”Proc.2003 国际干法研讨会。
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Masaharu Shiratani, Kosuke Takenaka, Kazunori Koga, Yukio Watanabe: "Anisotropic deposition of Cu using plasma CVD(Invited Lecture)"Proceedings of International COE Forum on Plasma Science and Technology. 33-34 (2004)
Masaharu Shiratani、Kosuke Takenaka、Kazunori Koga、Yukio Watanabe:“利用等离子体 CVD 进行 Cu 的各向异性沉积(邀请报告)”国际 COE 等离子体科学与技术论坛论文集。
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    0
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Kosuke Takenaka, Masaharu Shiratani, Manabu Takeshita, Makoto Kita, Kazunori Koga, Yukio Watanabe: "Control of deposition profile of Cu for LSI interconnects by plasma chemical vapor deposition(Invited Lecture Paper)"Pure & Applied Chemistry. (in press).
Kosuke Takenaka、Masaharu Shiratani、Manabu Takeshita、Makoto Kita、Kazunori Koga、Yukio Watanabe:“通过等离子体化学气相沉积控制 LSI 互连的 Cu 沉积剖面(特邀演讲论文)”Pure
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Kosuke Takenaka, Manabu Takeshita, Kazunori Koga, Masaharu Shiratani, Yukio Watanabe: "Effects of ion irradiation on plasma anisotropic CVD"Proceedings of International Symposium on Novel Materials Processing by Advanced Electromagnetic Energy Sources. (i
Kosuke Takenaka、Manabu Takeshita、Kazunori Koga、Masaharu Shiratani、Yukio Watanabe:“离子辐照对等离子体各向异性 CVD 的影响”先进电磁能源加工新型材料国际研讨会论文集。
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SHIRATANI Masaharu其他文献

SHIRATANI Masaharu的其他文献

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{{ truncateString('SHIRATANI Masaharu', 18)}}的其他基金

Growth promotion by cell-cycle synchronized pulse plasmas
通过细胞周期同步脉冲等离子体促进生长
  • 批准号:
    22656022
  • 财政年份:
    2010
  • 资助金额:
    $ 9.54万
  • 项目类别:
    Grant-in-Aid for Challenging Exploratory Research
Frontier science and technology of nanoblock transport and arrangement
纳米块输运与排列前沿科学技术
  • 批准号:
    20360040
  • 财政年份:
    2008
  • 资助金额:
    $ 9.54万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
Development of simultaneous in-situ measurements of size, density, and refractive index of particles in rf silane plasmas using a polarization-sensitive laser-light-scattering method
使用偏振敏感激光散射方法开发同步原位测量射频硅烷等离子体中颗粒的尺寸、密度和折射率
  • 批准号:
    06555023
  • 财政年份:
    1994
  • 资助金额:
    $ 9.54万
  • 项目类别:
    Grant-in-Aid for Developmental Scientific Research (B)

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    15K21580
  • 财政年份:
    2015
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常压等离子体CVD非晶碳各向异性控制技术开发
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    26790065
  • 财政年份:
    2014
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环境空气中非平衡等离子体 CVD 沉积的发展
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    26630371
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开发应用ECR等离子CVD二氧化钛涂层的功能性修复体。
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