Surface/interface control of high-frequency and high-power transistors based on GaN materials
基于GaN材料的高频大功率晶体管表面/界面控制
基本信息
- 批准号:14350155
- 负责人:
- 金额:$ 9.86万
- 依托单位:
- 依托单位国家:日本
- 项目类别:Grant-in-Aid for Scientific Research (B)
- 财政年份:2002
- 资助国家:日本
- 起止时间:2002 至 2004
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
The purpose of this research was to characterize and control surface/interface properties of GaN-based material systems such as AlGaN/GaN hetrostrcutures for the stability improvement of high-frequency and high-power transistors. The main results obtained are listed below :(1)Serious deterioration such as stoichiometry disorder and nitrogen deficiency (N deficiency) was found at the processed AlGaN surfaces. This resulted in formation of a localized deep donor level related to N vacancy (V_N), causing excess leakage currents at the AlGaN Schottky interface and serious drain current collapse in AlGaN/GaN heterostructure field effect transistors.(2)An Al_2O_3-based surface passivation scheme including the N_2-plasma surface treatment was proposed and applied to an insulated-gate type HFET. A large conduction-band offset of 2.1 eV was achieved at the Al_2O_3/Al_<0.3>Ga_<0.7>N interface. No current collapse was observed in the fabricated Al_2O_3 insulated-gate HFETs under both drain stress and gate stress.(3)From the detailed temperature-dependent current-voltage (I-V-T) measurements, we discussed the mechanism of leakage currents through GaN and AlGaN Schottky interfaces. The experiments were compared to the calculations based on thin surface barrier model in which the effects of surface defects were taken into account. Our simulation results indicates that the barrier thinning caused by unintentional surface-defect donors enhances the funneling transport processes, leading to large leakage currents through GaN and AlGaN Schottky interfaces.
本研究的目的是表征和控制氮化镓基材料体系(如AlGaN/GaN异质结构)的表面/界面特性,以提高高频和大功率晶体管的稳定性。得到的主要结果如下:(1)处理后的AlGaN表面出现了严重的化学计量紊乱和缺氮现象。这导致了与N空位相关的局部深施主能级(V_N)的形成,在AlGaN/GaN异质结构场效应晶体管中导致了AlGaN Schottky界面的过量泄漏电流和严重的漏极电流崩溃。(2)提出了一种基于al_2o_3的表面钝化方案,包括n_2 -等离子体表面处理,并应用于绝缘栅型HFET。在Al_2O_3/Al_<0.3>Ga_<0.7>N界面上实现了2.1 eV的大导带偏移。在漏极应力和栅极应力下,制备的Al_2O_3绝缘栅极hfet均未观察到电流坍塌。(3)通过详细的温度相关电流-电压(I-V-T)测量,我们讨论了漏电流通过GaN和AlGaN肖特基界面的机理。将实验结果与考虑表面缺陷影响的基于薄表面势垒模型的计算结果进行了比较。我们的模拟结果表明,无意表面缺陷供体引起的屏障变薄增强了漏斗输运过程,导致通过GaN和AlGaN肖特基界面的大泄漏电流。
项目成果
期刊论文数量(78)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
Computer Simulation of Current Transport in GaN and AlGaN Schottky Diodes Based on Thin Surface Barrier Model
基于薄表面势垒模型的 GaN 和 AlGaN 肖特基二极管中电流传输的计算机仿真
- DOI:
- 发表时间:2004
- 期刊:
- 影响因子:0
- 作者:J.Kotani;H.Hasegawa;T.Hashizume
- 通讯作者:T.Hashizume
A Novel Thin Al_2O_3 Gate Dielectric by ECR-plasma Oxidation of Al for AlGaN/GaN Insulated Gate Heterostructure Field-Effect Transistors
一种新型薄Al_2O_3栅介质,通过ECR等离子体氧化Al用于AlGaN/GaN绝缘栅异质结构场效应晶体管
- DOI:
- 发表时间:2002
- 期刊:
- 影响因子:0
- 作者:M.Yoshita;et al.;S.Ootomo
- 通讯作者:S.Ootomo
H.Hasegawa, T.Inagaki, S.Ootomo, T.Hashizume: "Mechanisms of Current Collapse and Gate Leakage Currents in AlGaN/GaN Heterostructure Field Effect Transistors"J.Vac.Sci.Technol B. 21. 1844-1855 (2003)
H.Hasekawa、T.Inagaki、S.Ootomo、T.Hashizume:“AlGaN/GaN 异质结构场效应晶体管中的电流崩塌和栅极漏电流的机制”J.Vac.Sci.Technol B. 21. 1844-1855 (2003)
- DOI:
- 发表时间:
- 期刊:
- 影响因子:0
- 作者:
- 通讯作者:
Effects of Mg accumulation on chemical and electronic properties of Mg-doped p-type GaN surface
- DOI:10.1063/1.1580195
- 发表时间:2003-07-01
- 期刊:
- 影响因子:3.2
- 作者:Hashizume, T
- 通讯作者:Hashizume, T
T.Hashizume: "Surface Fermi level position and gap state distribution of InGaP surface grown by metal-organic vapor phase epitaxy"Applied Physics Letters. 81. 2382-2384 (2002)
T.Hashizume:“金属有机气相外延生长的 InGaP 表面的表面费米能级位置和能隙态分布”应用物理快报。
- DOI:
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- 影响因子:0
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HASHIZUME Tamotsu其他文献
HASHIZUME Tamotsu的其他文献
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{{ truncateString('HASHIZUME Tamotsu', 18)}}的其他基金
Reliability improvement of GaN transistors based on the control of electronic states and a nobel gate structure
基于电子态控制和诺贝尔栅极结构的GaN晶体管可靠性提升
- 批准号:
21246007 - 财政年份:2009
- 资助金额:
$ 9.86万 - 项目类别:
Grant-in-Aid for Scientific Research (A)
Reliability improvement of GaN-based devices by controlling defects and interfaces
通过控制缺陷和界面提高GaN基器件的可靠性
- 批准号:
17360133 - 财政年份:2005
- 资助金额:
$ 9.86万 - 项目类别:
Grant-in-Aid for Scientific Research (B)
Metal contact formation to GaN based on the interface control technologies
基于界面控制技术的GaN金属接触形成
- 批准号:
11555081 - 财政年份:1999
- 资助金额:
$ 9.86万 - 项目类别:
Grant-in-Aid for Scientific Research (B)
"Insulated gate structures on GaN and their interface properties"
“GaN 上的绝缘栅结构及其界面特性”
- 批准号:
11650309 - 财政年份:1999
- 资助金额:
$ 9.86万 - 项目类别:
Grant-in-Aid for Scientific Research (C)
"Fabrication of high-speed and low-power-consumption InP-based HEMT by novel interface control techniques"
“通过新颖的接口控制技术制造高速、低功耗 InP 基 HEMT”
- 批准号:
09555092 - 财政年份:1997
- 资助金额:
$ 9.86万 - 项目类别:
Grant-in-Aid for Scientific Research (B)
"A study on novel quantum structures utilizing direct Schottky contacts to the two dimensional electon gas"
“利用二维电子气体直接肖特基接触研究新型量子结构”
- 批准号:
07837001 - 财政年份:1995
- 资助金额:
$ 9.86万 - 项目类别:
Grant-in-Aid for Scientific Research (C)
Fabrication of InP-based high-speed integrated circuits using MESFETs with high Schottky barrier height
使用具有高肖特基势垒高度的 MESFET 制造 InP 基高速集成电路
- 批准号:
07555093 - 财政年份:1995
- 资助金额:
$ 9.86万 - 项目类别:
Grant-in-Aid for Scientific Research (B)
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