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"Insulated gate structures on GaN and their interface properties"

“GaN 上的绝缘栅结构及其界面特性”

基本信息

批准号：
11650309
负责人：
HASHIZUME Tamotsu
金额：
$ 1.79万
依托单位：
HOKKAIDO UNIVERSITY
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (C)
财政年份：
1999
资助国家：
日本
起止时间：
1999 至 2001
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-11650309/
关键词：
Gallium Nitride surface control interface control MIS structure surface treatment Fermi level pinning SiN_χ Al_2O_3 フェルミ準位ビンニング窒化シリコン膜 GaN MIS接合自然酸化膜 ECRプラズマ

项目摘要

For the application to high-power/high-frequency electronic devices, we have investigated the formation processes of insulated structures on GaN and their interface properties. The main results obtained are listed below :(1) Chemistry and electronic properties of GaN surfaces after various kinds of surface treatments were characterized by x-ray photoelectron spectroscopy (XPS). Strong upward band bending of 1.4 eV was found at the air-exposed GaN surface. This is due to the high density of surface states. The surface treatment in the NH_40H solution and the ECR-excited N_2 plasma significantly decreased the surface band bending to 0.5 eV, indicating the reduction of the Fermi level pinning.(2) We have successfully fabricated the SiN_χ gate structure on the treated n-GaN surface by the ECR-CVD process. The SiN_χ/n-GaN structure showed the type-I band lineup and a low interface state density distribution in the range of 10^<11> cm^<-2> eV^<-1>. The surface passivation utilizing the ECR-C … More VD SiNx film enhanced the drain saturation current and improved the stability in the GaN/AlGaN heterostructure field effect transistors.(3) Electrical characterization of AlN/GaN interfaces was carried out by the C-V technique in samples grown by metal organic chemical vapor deposition. A low value of interface state density D_<it> of < 1x 10^<11> cm^<-2> eV^<-1> was achieved around the energy position of Ec-0.8eV. This indicates that the AlN/GaN structures have good interface properties with low interface state density, and are very promising for advanced MIS devices.(3) A novel surface passivation process for AIGaN/GaN heterostructures utilizing an ultrathin Al_20_3 layer (〜1 nm) was proposed. The reverse leakage current for the Schottky gate contact on the Al_20_3-passivated heterostructure surface was reduced by three orders of magnitude than that for the conventional Schottky gate structure. C-V results showed good gate controllability of two-dimensional electron gas (2DEG) by the novel gate structure. Less

为了应用于大功率/高频电子器件，我们研究了GaN上绝缘结构的形成过程及其界面特性。主要研究结果如下：（1）采用X射线光电子能谱（XPS）对不同表面处理后的GaN表面进行了表征。在空气暴露的GaN表面发现了1.4 eV的强向上能带弯曲。这是由于高密度的表面状态。在NH_40H溶液和ECR激发的N_2等离子体中的表面处理显著地将表面能带弯曲减小到0.5eV，表明费米能级钉扎的减少。(2)我们采用ECR-CVD工艺在经过处理的n-GaN表面成功地制备了SiN_x栅结构。SiN_x/n-GaN结构显示出I型能带排列和在10^ cm^ eV^范围内的低界面态密度分布<11><-2><-1>。ECR-C表面钝化 ...更多信息 VD SiNx薄膜增强了GaN/AlGaN异质结场效应晶体管的漏极饱和电流，提高了稳定性。(3)采用C-V技术对金属有机化学气相沉积（MOCVD）生长的AlN/GaN界面进行了电学表征。在<it><11><-2><-1>Ec-0.8eV的能量位置附近获得了<1 × 10 ~（-3）cm ~（-3）eV的低界面态密度D_。这表明AlN/GaN结构具有良好的界面特性，界面态密度低，是非常有前途的先进MIS器件。(3)提出了一种新的AlGaN/GaN异质结构表面钝化工艺，即在AlGaN/GaN异质结构表面覆盖一层Al 2 O3（约1 nm）。在Al_2O_3钝化的异质结表面上的肖特基栅接触的反向漏电流比常规肖特基栅结构的反向漏电流降低了三个数量级。C-V测试结果表明，该新型栅结构具有良好的二维电子气（2DEG）栅控性。少