"Fabrication of high-speed and low-power-consumption InP-based HEMT by novel interface control techniques"
"Fabrication of high-speed and low-power-consumption InP-based HEMT by novel interface control techniques"
批准号:
09555092
负责人:
HASHIZUME Tamotsu
金额:
$4.74万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (B)
财政年份:
1997
资助国家:
日本
项目状态:
已结题
起止时间:
1997 至 1998
中文摘要
本研究的目的是采用原位电化学方法制作肖特基栅高功率InAlAs/InGaAsHEMT,并采用超薄Si界面控制技术制作低功耗的绝缘栅InAlAs/InGaAsHEMT。获得的主要结果如下:(1)一种新的原位脉冲模式电化学工艺使我们能够在InP、InAlAs和InGaAs上形成良好的肖特基接触.(2)溅射形成的Ti/n-InP接触在500゚C快速热退火后表现出良好的欧姆特性.(3)SiN/SiIn-InP结构的最小界面态密度低至2×10^-lt;10-gT;采用ECR N_2等离子体外延生长超薄Si界面控制层,并对其进行部分氮化处理。(4)在1 Hz至微波频率范围内,观察到钝化InGaAs结构的小信号响应。基于无序诱导能隙态(DIGS)模型,可以很好地将复杂的频率依赖关系拟合到等效电路中。(5)利用Si界面控制层实现了一种新型的绝缘栅InAlAs/InGaAsHEMT结构。得到的最小界面态密度为2×1010 cm~(-2)~(-2)·ev~(-1)·t~(-1)。(6)与不加Si层的HEMT相比,有Si界面控制层的HEMT的跨导Gm提高了10倍以上。
英文摘要
The purpose of this study is to fabricate a high-speed InAlAs/InGaAs HEMT with Schottky gate using in-situ electrochemical process and to fabricate an insulated-gate InAIAs/InGaAs HEMT with low-power consumption using ultrathin Si interface-control technique. The main results obtained are listed below :(1) A novel in-situ pulsed-mode electrochemical process enables us to produce good Schottky contacts on InP, InAlAs and lnGaAs with carrier transport properties according to the thermionic emission model.(2) A Ti/n-InP contact formed by sputtering showed good ohmic characteristics after rapid thermal annealing at 500 ゚C.(3) A SiN/SiIn-InP structure with the minimum interface state density as low as 2x 10^<10> cm^<-2> was successfully fabricated by epitaxial growth of ultrathin Si interface control layer and its partial nitridation using ECR N_2 plasma.(4) A small-signal response of a passivated InGaAs structure was observed over a wide frequency range from 1Hz to microwave frequencies. The complicated frequency dependence of the MIS admittance can be well fitted into an equivalent circuit based on the disorder-induced gap state (DIGS) model.(5) A novel insulated gate InAlAs/InGaAs HEMT structure was realized by use of Si interface control layer. The minimum interface state density of 2x1010 cm^<-2> eV^<-1> was achieved.(6) It was found that a transconductance gm of the fabricated HEMT with the Si interface controllayer was enhanced more 10 times than that of the HEMT without Si layer.
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H. Hasegawa: "Evolution Mechanism of Nearly-Pinning free Platinum/N-Type Indium Phosphide Interface with a High Schottky Barrier Height by In-Situ Electrochemical Process" J.Vac.Sci.Technol.B. 15. 1227-34 (1997)
H. Hasekawa:“通过原位电化学过程实现具有高肖特基势垒高度的近钉扎铂/N 型磷化铟界面的演化机制”J.Vac.Sci.Technol.B。
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通讯作者:
K. Iizuka: "Small-Signal Response of Interface States at Passivated InGaAs Surfaces from Low Frequencies up to Microwave Frequencies" Solid-State Electron.41. 1463-9 (1997)
K. Iizuka:“钝化 InGaAs 表面从低频到微波频率的界面态的小信号响应”固态电子。41。
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H.Takahashi, T.Hashizume and H.Hasegawa: ""Novel InP Metal-Insulator-Semiconductor Structure Having an Ultrathin Silicon Interface Control Layer" Appl.Sur.Sci.123/124. 615-618 (1998)
H.Takahashi、T.Hashizume 和 H.Hasekawa:“具有超薄硅界面控制层的新型 InP 金属-绝缘体-半导体结构”Appl.Sur.Sci.123/124.615-618 (1998)
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M.B.Takayama: "Interfacial Reaction and Electrical Properties in the sputter-deposited Al/Ti ohmic contact to n-InP" Japanese Journal of Applied Physics, in press. 38. (1999)
M.B.Takayama:“溅射沉积的 Al/Ti 欧姆接触与 n-InP 的界面反应和电性能”,《日本应用物理学杂志》,正在出版。
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H.Hasegawa: "Evolution Mechanism of Nearly-Pinning Platinum/N-Typelndium phoshide Interface with a High Schottky Barrier Height by In-Site Electrochemical Process Frec" J.Vac.Sci.Technol.B.Vol 15. 1227-1235 (1997)
H.Hasekawa:“通过现场电化学过程 Frec 实现具有高肖特基势垒高度的近钉扎铂/N 型磷化铟界面的演化机制”J.Vac.Sci.Technol.B.Vol 15. 1227-1235 (1997
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共 45 条
Reliability improvement of GaN transistors based on the control of electronic states and a nobel gate structure
-
批准号:21246007
-
项目类别:Grant-in-Aid for Scientific Research (A)
-
资助金额:$29.2万
-
财政年份:2009
-
负责人:HASHIZUME Tamotsu
-
依托单位:
Reliability improvement of GaN-based devices by controlling defects and interfaces
-
批准号:17360133
-
项目类别:Grant-in-Aid for Scientific Research (B)
-
资助金额:$9.86万
-
财政年份:2005
-
负责人:HASHIZUME Tamotsu
-
依托单位:
Surface/interface control of high-frequency and high-power transistors based on GaN materials
-
批准号:14350155
-
项目类别:Grant-in-Aid for Scientific Research (B)
-
资助金额:$9.86万
-
财政年份:2002
-
负责人:HASHIZUME Tamotsu
-
依托单位:
Metal contact formation to GaN based on the interface control technologies
-
批准号:11555081
-
项目类别:Grant-in-Aid for Scientific Research (B)
-
资助金额:$4.03万
-
财政年份:1999
-
负责人:HASHIZUME Tamotsu
-
依托单位:
"Insulated gate structures on GaN and their interface properties"
-
批准号:11650309
-
项目类别:Grant-in-Aid for Scientific Research (C)
-
资助金额:$1.79万
-
财政年份:1999
-
负责人:HASHIZUME Tamotsu
-
依托单位:
"A study on novel quantum structures utilizing direct Schottky contacts to the two dimensional electon gas"
-
批准号:07837001
-
项目类别:Grant-in-Aid for Scientific Research (C)
-
资助金额:$1.47万
-
财政年份:1995
-
负责人:HASHIZUME Tamotsu
-
依托单位:
Fabrication of InP-based high-speed integrated circuits using MESFETs with high Schottky barrier height
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批准号:07555093
-
项目类别:Grant-in-Aid for Scientific Research (B)
-
资助金额:$3.07万
-
财政年份:1995
-
负责人:HASHIZUME Tamotsu
-
依托单位:
海外基金