Reliability improvement of GaN transistors based on the control of electronic states and a nobel gate structure

为了提高gan异质结构晶体管的工作稳定性，我们进行了绝缘体-半导体界面电子态的表征和控制、多台通道（MMC）晶体管的制作和表征以及相关实验。通过对Al_2O_3/AlGaN /GaN结构的模拟和光辅助电容电压方法，首次确定了Al_2O_3/AlGaN结构中电子态的密度分布。研究还发现，MMC结构对于提高氮化镓基晶体管的电流稳定性是非常有效的。

To improve the operation stability of GaN-heterostructure transistors, we have carried out characterization and control of electronic states at insulator-semiconductor interfaces, fabrication and characterization of the multi-mesa-channel (MMC) transistors, and the related experiments. By applying the novel simulation and photo-assisted capacitance-voltage methods to Al_2O_3/ AlGaN/GaN structures, we determined the density distribution of electronic states at the Al_2O_3/AlGaN for the first time. It was also found that the MMC structure is very effective in improving the current stability of the GaN-based transistors.