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"A study on novel quantum structures utilizing direct Schottky contacts to the two dimensional electon gas"

“利用二维电子气体直接肖特基接触研究新型量子结构”

基本信息

批准号：
07837001
负责人：
HASHIZUME Tamotsu
金额：
$ 1.47万
依托单位：
HOKKAIDO UNIVERSITY
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (C)
财政年份：
1995
资助国家：
日本
起止时间：
1995 至 1996
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-07837001/
关键词：
quantum structure 2DEG Schottky barrier in-plane gate split gate quantum wire transistor single electron transistor Schottky gate ショットキーゲット

项目摘要

The purpose of this study is to investigate the properties of Schottky/2DEG contacts and to realize novel quantum structures utilizing the Schottky/2DEG contacts as in-plane gates. The main results obtained are listed below :(1) We developed a novel technique to form a direct Schottky contact to the edge of 2DEG in AlGaAs/GaAs heterojunction by use of in-situ electrochemical process, and applied this technique to formation of in-plane-gate type quantum structures.(2) In-plane-gate type quantum wire transistors were successfully fabricated. Quantized conductance was observed up to 100K,indicating that the novel in-plane gate realized stronger electron confinement than that in conventional split-gate structures.(3) In-plane-gate type electron interference device (Aharonov-Bohm ring) was also fabricated. By suitable gate tuning, clear magnetoresistance oscillation due to the A-B interference effect was observed at 3.3K.(4) GaAs based single electron transistors with in-plane gates were successfully developed. All the fabricated devices gave clear Coulomb conductance oscillation and Coulomb blockade characteristics at low temperatures. The maximum operation temperature is 30K.(5) Single electron transistors having double quantum dots exhibited complicated conductance oscillation behavior that strongly depended on the coupling condition of two dots. This behavior is likely to be explained by the inter-coupling effect between quantum levels in both dots.

本研究的目的是研究肖特基/2DEG接触的性质，并利用肖特基/2DEG接触作为面内栅极实现新型量子结构。主要研究结果如下：（1）发展了一种利用电化学方法在AlGaAs/GaAs异质结中形成与2DEG边缘直接肖特基接触的新技术，并将该技术应用于面栅型量子结构的形成。(2)成功制备了面栅型量子线晶体管。在100 K温度下观察到了量子化电导，表明这种新型的面内栅结构实现了比传统分裂栅结构更强的电子约束。(3)还制作了平面栅型电子干涉器件（Aharonov-Bohm环）。在3.3K下，通过适当的栅极调谐，观察到了明显的由A-B干涉效应引起的磁电阻振荡。(4)成功地研制了面内栅GaAs基单电子晶体管。所制备的器件在低温下具有明显的库仑电导振荡和库仑阻塞特性。最高工作温度为30 K。(5)具有双量子点的单电子晶体管表现出复杂的电导振荡行为，强烈依赖于两个量子点的耦合条件。这种行为可能是由两个量子点中量子能级之间的相互耦合效应解释的。