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Establishment of novel microscale surface treatment/processing technology with ultra-small plasma beam

新型超小等离子束微尺度表面处理/加工技术的建立

基本信息

批准号：
12450288
负责人：
TERASHIMA Kazuo
金额：
$ 9.6万
依托单位：
The University of Tokyo
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
2000
资助国家：
日本
起止时间：
2000 至 2001
项目状态：
已结题

项目摘要

In this project, we performed an establishment of novel microscale surface treatment/processing technology with ultrta-small plasma beam as followed.(1) We generated various type small beam plasmas ranging from 2mm to 25μmφusing dc, ac, and VHF plasma generator. Especially, thermoelectron enhancede micrometer-scale plasma (TEMP), which had been proposed and developed by our group made it easy to generate a small size plasma. Examples of typical performances were as follows: (A) small size (from 2mm to 25μmφ). (B) multi probes (six). (C) low sustain power (1W).(2) The various plasmas (gas : N2, O2, Ar, power : 0.1-30W, gas flow : 0-1000sccm, preasure : 7600-40torr) were characterized by optical emission spectroscopy, which shows the various plasma conditions, such as typical plasma temperatures of three plasmas, namely as thermal, cold, and interface plasma. For instance, the gas temperature of Ar gas at 760torr was about 4000-5000K.(3) Using these ultra-small plasma beam, we succeeded various micro-processing as follows : (A) melting of metal (Fe, Al, Cu). (B) oxidization. (C) deposition (C-system).Especially, due to the advance of matching performance, far from the plasma generating electric source, we could generate such small plasma and performe surface-treatment as mentioned above.

在这个项目中，我们进行了一个新的微尺度表面处理/加工技术的建立与超小等离子体束如下。(1)我们用直流、交流和甚高频等离子体发生器产生了直径从2 mm到25μm的各种类型的小束流等离子体。特别是本课题组提出并发展的热电子增强微米尺度等离子体（TEMP），使得产生小尺寸等离子体变得容易。典型性能的例子如下：（A）小尺寸（从2 mm到25μmφ）。(B)多探头（6个）。(C)低维持功率（1 W）。(2)通过光学发射光谱表征了各种等离子体（气体：N2，O2，Ar，功率：0.1- 30 W，气体流量：0- 1000 sccm，压力：7600- 40 μ m），其显示了各种等离子体条件，例如三种等离子体的典型等离子体温度，即热等离子体、冷等离子体和界面等离子体。例如，Ar气在760 ℃时的气体温度约为4000- 5000 K。(3)利用这些超小等离子体束，我们成功地进行了以下各种微加工：（A）金属（Fe，Al，Cu）的熔化。(B)氧化(C)特别是，由于匹配性能的提高，远离等离子体产生电源，我们可以产生如此小的等离子体并进行如上所述的表面处理。