Integration of ultra-small plasma material processing device - fabrication of microscale plasma chip
Integration of ultra-small plasma material processing device - fabrication of microscale plasma chip
批准号:
12555185
负责人:
TERASHIMA Kazuo
金额:
$8.58万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (B)
财政年份:
2000
资助国家:
日本
项目状态:
已结题
起止时间:
2000 至 2001
中文摘要
在本项目中,作为材料加工科学应用的一个例子,开发了一种等离子体芯片,这是一种使用微尺度等离子体的创新材料加工设备。利用共面薄膜电极(CFE)产生的微尺度等离子体制作了等离子体芯片样机。与传统的等离子体芯片相比,集成了等离子体处理设备的等离子体芯片在加工方面具有一些优势。例如,由于其较高的处理速度,它非常有利。高处理速度是由于使用高密度微尺度等离子体而导致的单独处理的高速度和利用集成设备进行并行处理的可能性的综合结果。本项目取得了以下成果:(1)利用特殊控制的电源,用H2、Ar、CH4、N_2、O_2等多种等离子体气体,经过30分钟以上的时间,成功地获得了稳定的辉光型等离子体。通过光学发射光谱、朗缪尔探针测量和计算机模拟,证实了等离子体芯片的微尺度等离子体。(1)利用等离子体芯片样机,进行了甲烷-氢气体系等离子体化学气相沉积(CVD)和甲烷-氮气体系氮化碳膜等离子体化学气相沉积(CVD)。用扫描电子显微镜(SEM)、电子探针分析(EPMA)、俄歇电子能谱(AES)、拉曼光谱、红外光谱等手段对镀层进行了表征。通过这些表征发现,我们很容易获得各种碳膜,如玻璃碳和类金刚石碳,以及各种氮化物含量的氮化碳薄膜,其沉积速率超过1μm/m。
英文摘要
In this project, as an example of the application to materials processing science, a plasma chip, an innovative material-processing device using microscale plasma, has been developed. A prototype plasma chip has been fabricated with microscale plasma generated using coplanar film electrodes (CFE). A plasma chip on which plasma-processing apparatuses are integrated have some advantages for processing compared to conventional ones. For instance, it is highly favorable due to its higher processing speed. The high processing speed results from a combination of high speeds of individual process due to the use of high-density microscale plasma and the possibility of parallel processing with integrated apparatus. The following results have been obtained in this project.(1) Using a specially controlled electric source, we have successfully obtained stable glow-type plasma using various plasma gas such as H2, Ar, CH4, N2, and O2 for more than 30 min.(2) The high density (above 10^<15>cm^<-3>) of the microscale plasma of plasma chip have been confirmed experimental by optical emission spectroscopy and Langmuir probe measurement, and computer simulation.(1) Plasma chemical vapor deposition (CVD) of carbon films using a CH4-H2 gas system and carbon nitride films using a CH4-N2 gas system have been performed with a prototype plasma chips. Deposits were characterized by scanning electron microcopy (SEM), electron probe microscopy analysis (EPMA), Auger electron spectroscopy (AES), Raman spectroscopy, infrared spectroscopy. From these characterizations, it was founded that we have obtained various carbon films easily, such as a glassy carbon and diamond-like carbon, and carbon nitride films with various contents of nitrides with a high deposition rate exceeding 1 μm/m.
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K. Terashima: "Application of Mezzo-Space Plasma to Material Surface Treatment - Development of Plasma Chip -"Hyoumen-gijyutu. 52-12. 841-842 (2001)
K. Terashima:“中空间等离子体在材料表面处理中的应用-等离子体芯片的开发-”Hyoumen-gijyutu。
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T. Ito, T. Izaki, and K. Terashima: "APPLICATION OF MICROSCALE PLASMA TO MATERIAL PROCESSING"Thin Solid Films. 386. 300-304 (2001)
T. Ito、T. Izaki 和 K. Terashima:“微尺度等离子体在材料加工中的应用”固体薄膜。
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T. Ito and K. Terashima: "Development of plasma chip"Surface and Coating Technology. 133-134. 497-500 (2000)
T. Ito 和 K. Terashima:“等离子芯片的开发”表面和涂层技术。
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T. Ito and K. Terashima: "Multiple Microscale Plasma CVD Apparatus on a Substrate"Thin Solid Films. 390. 234-236 (2001)
T. Ito 和 K. Terashima:“基板上的多个微型等离子体 CVD 装置”固体薄膜。
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寺嶋和夫,伊藤剛仁: "マイクロメータからナノメータ領域のプラズマ生成とその材料科学への応用"プラズマ・核融合学会誌. 76巻・5号. 471-476 (2000)
Kazuo Terashima、Takehito Ito:“微米到纳米范围内的等离子体生成及其在材料科学中的应用”日本等离子体与核聚变学会杂志,第 76 卷,第 5 期。471-476(2000 年)。
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共 14 条
Creation of cryoplasma materials process science
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批准号:24246120
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项目类别:Grant-in-Aid for Scientific Research (A)
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资助金额:$29.7万
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财政年份:2012
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负责人:TERASHIMA Kazuo
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依托单位:
Development of novel materials surface modification/fabricationTechnology with a use of supercritical fluid ion beam
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批准号:24656436
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项目类别:Grant-in-Aid for Challenging Exploratory Research
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资助金额:$2.58万
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财政年份:2012
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负责人:TERASHIMA Kazuo
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依托单位:
Generation of ccryoplasma and its application to materials processing
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批准号:21360356
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$11.56万
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财政年份:2009
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负责人:TERASHIMA Kazuo
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依托单位:
Creation of solution plasma controlled in nano space and Its application to materials processing
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批准号:19360326
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$13.06万
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财政年份:2007
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负责人:TERASHIMA Kazuo
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依托单位:
Establishment of innovational materials surface treatment / modification technology with using supercritical cluster plasma fluid
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批准号:17360349
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$9.79万
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财政年份:2005
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负责人:TERASHIMA Kazuo
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依托单位:
Establishment of novel materials surface treatment/modification technology with using supercritical fluid plasma beam
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批准号:15360380
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$9.86万
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财政年份:2003
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负责人:TERASHIMA Kazuo
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依托单位:
Application of microplasma to materials device process
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批准号:15075202
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项目类别:Grant-in-Aid for Scientific Research on Priority Areas
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资助金额:$53.38万
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财政年份:2003
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负责人:TERASHIMA Kazuo
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依托单位:
Establishment of novel microscale surface treatment/processing technology with ultra-small plasma beam
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批准号:12450288
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$9.6万
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财政年份:2000
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负责人:TERASHIMA Kazuo
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依托单位:
Development of SPM operational in a plasma environmental and its application to the nano-scopic structural study of solid-plasma interface
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批准号:10450231
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$8.7万
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财政年份:1998
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负责人:TERASHIMA Kazuo
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依托单位:
Development of STM operational in a plasma and its application to a control of plasma materials surface processing on an atomic scale
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批准号:09555215
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$6.14万
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财政年份:1997
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负责人:TERASHIMA Kazuo
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依托单位:
Developmene of micro/nanoscale plasma generator and its application to materialn process
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批准号:07555513
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项目类别:Grant-in-Aid for Scientific Research (A)
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资助金额:$2.43万
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财政年份:1995
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负责人:TERASHIMA Kazuo
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依托单位:
Development of nano-scale processing with the tunneling electrons from a scanning tunneling microscope (STM) under atmospheric or reduced pressure
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批准号:03650539
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项目类别:Grant-in-Aid for General Scientific Research (C)
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资助金额:$1.41万
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财政年份:1991
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负责人:TERASHIMA Kazuo
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依托单位: