Integration of ultra-small plasma material processing device - fabrication of microscale plasma chip

本项目以应用于材料加工科学为例，研制了等离子体芯片——一种利用微尺度等离子体进行材料加工的创新装置。利用共面膜电极（CFE）产生的微尺度等离子体制备了等离子体芯片原型。集成等离子体处理设备的等离子体芯片与传统的等离子体芯片相比具有一定的处理优势。例如，由于其较高的处理速度，它是非常有利的。高处理速度是由于使用高密度微尺度等离子体和集成设备并行处理的可能性而使单个过程的高速度相结合的结果。在本项目中获得了以下结果：(1)采用特殊控制的电源，在H2、Ar、CH4、N2、O2等多种等离子体气体作用30 min以上，成功获得稳定的辉光型等离子体。(2)通过光学发射光谱、朗缪尔探针测量和计算机模拟实验证实了等离子体芯片微尺度等离子体的高密度（10^<15>cm^<-3>）。(1)用原型等离子体芯片进行了CH4-H2体系碳膜和CH4-N2体系氮化碳膜的等离子体化学气相沉积（CVD）。采用扫描电镜（SEM）、电子探针显微镜（EPMA）、俄歇电子能谱（AES）、拉曼光谱（Raman spectroscopy）、红外光谱（infrared spectroscopy）对沉积物进行了表征。从这些表征中发现，我们很容易得到各种碳膜，如玻璃碳和类金刚石碳，以及各种氮化物含量的氮化碳膜，沉积速率超过1 μm/m。

In this project, as an example of the application to materials processing science, a plasma chip, an innovative material-processing device using microscale plasma, has been developed. A prototype plasma chip has been fabricated with microscale plasma generated using coplanar film electrodes (CFE). A plasma chip on which plasma-processing apparatuses are integrated have some advantages for processing compared to conventional ones. For instance, it is highly favorable due to its higher processing speed. The high processing speed results from a combination of high speeds of individual process due to the use of high-density microscale plasma and the possibility of parallel processing with integrated apparatus. The following results have been obtained in this project.(1) Using a specially controlled electric source, we have successfully obtained stable glow-type plasma using various plasma gas such as H2, Ar, CH4, N2, and O2 for more than 30 min.(2) The high density (above 10^<15>cm^<-3>) of the microscale plasma of plasma chip have been confirmed experimental by optical emission spectroscopy and Langmuir probe measurement, and computer simulation.(1) Plasma chemical vapor deposition (CVD) of carbon films using a CH4-H2 gas system and carbon nitride films using a CH4-N2 gas system have been performed with a prototype plasma chips. Deposits were characterized by scanning electron microcopy (SEM), electron probe microscopy analysis (EPMA), Auger electron spectroscopy (AES), Raman spectroscopy, infrared spectroscopy. From these characterizations, it was founded that we have obtained various carbon films easily, such as a glassy carbon and diamond-like carbon, and carbon nitride films with various contents of nitrides with a high deposition rate exceeding 1 μm/m.