Integration of ultra-small plasma material processing device - fabrication of microscale plasma chip

在本项目中，作为材料加工科学应用的一个例子，开发了一种等离子体芯片，这是一种使用微尺度等离子体的创新材料加工设备。利用共面薄膜电极(CFE)产生的微尺度等离子体制作了等离子体芯片样机。与传统的等离子体芯片相比，集成了等离子体处理设备的等离子体芯片在加工方面具有一些优势。例如，由于其较高的处理速度，它非常有利。高处理速度是由于使用高密度微尺度等离子体而导致的单独处理的高速度和利用集成设备进行并行处理的可能性的综合结果。本项目取得了以下成果：(1)利用特殊控制的电源，用H2、Ar、CH4、N_2、O_2等多种等离子体气体，经过30分钟以上的时间，成功地获得了稳定的辉光型等离子体。通过光学发射光谱、朗缪尔探针测量和计算机模拟，证实了等离子体芯片的微尺度等离子体。(1)利用等离子体芯片样机，进行了甲烷-氢气体系等离子体化学气相沉积(CVD)和甲烷-氮气体系氮化碳膜等离子体化学气相沉积(CVD)。用扫描电子显微镜(SEM)、电子探针分析(EPMA)、俄歇电子能谱(AES)、拉曼光谱、红外光谱等手段对镀层进行了表征。通过这些表征发现，我们很容易获得各种碳膜，如玻璃碳和类金刚石碳，以及各种氮化物含量的氮化碳薄膜，其沉积速率超过1μm/m。

In this project, as an example of the application to materials processing science, a plasma chip, an innovative material-processing device using microscale plasma, has been developed. A prototype plasma chip has been fabricated with microscale plasma generated using coplanar film electrodes (CFE). A plasma chip on which plasma-processing apparatuses are integrated have some advantages for processing compared to conventional ones. For instance, it is highly favorable due to its higher processing speed. The high processing speed results from a combination of high speeds of individual process due to the use of high-density microscale plasma and the possibility of parallel processing with integrated apparatus. The following results have been obtained in this project.(1) Using a specially controlled electric source, we have successfully obtained stable glow-type plasma using various plasma gas such as H2, Ar, CH4, N2, and O2 for more than 30 min.(2) The high density (above 10^<15>cm^<-3>) of the microscale plasma of plasma chip have been confirmed experimental by optical emission spectroscopy and Langmuir probe measurement, and computer simulation.(1) Plasma chemical vapor deposition (CVD) of carbon films using a CH4-H2 gas system and carbon nitride films using a CH4-N2 gas system have been performed with a prototype plasma chips. Deposits were characterized by scanning electron microcopy (SEM), electron probe microscopy analysis (EPMA), Auger electron spectroscopy (AES), Raman spectroscopy, infrared spectroscopy. From these characterizations, it was founded that we have obtained various carbon films easily, such as a glassy carbon and diamond-like carbon, and carbon nitride films with various contents of nitrides with a high deposition rate exceeding 1 μm/m.