Development of STM operational in a plasma and its application to a control of plasma materials surface processing on an atomic scale

等离子体中运行的 STM 的开发及其在原子尺度上等离子体材料表面处理控制中的应用

• 批准号: 09555215
• 负责人: TERASHIMA Kazuo
• 金额: $ 6.14万
• 依托单位: The University of Tokyo
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 1997
• 资助国家: 日本
• 起止时间: 1997 至 1998
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-09555215/
• 关键词: Plasma environment; STM (scanning tunneling microscope); plasma-solid surface interface; etching; atomic image; plasma surface processing; 格子像; プラズマ-個体界面; プラズマ材料表面プロセシング

In this project, we performed the first attempt at the development of a scanning tunneling microscope (STM) for use under a plasma environment. The apparatus consists of an STM system and a radio-frequency (rf) (430MHz) plasma generation system housed in a vacuum chamber with a rotary pump. A special amplifier with a resolution of 10 femtoamp. up to 1kV is employed for tunneling current measurements. To prevent noise current from the plasma, the Pt-Ir probe tip is coated with epoxy grease and insulated glass using the sol-gel method except around its apex of about 3 mum. Under the conventional glow-plasma condition, the noise current from the plasma was deduced to be less than 0.1 nA during plasma exposure for 1800 sec. Using this apparatus, the step structure on a nanometer scale and atomic image of highly oriented pyrolytic graphite (HOPG) were obtained under rf, low-pressure (0.3 Tbrr) air glow plasma. We also discussed the role of the STM tip for successful, realistic "in situ" observation.

在这个项目中，我们首次尝试开发用于等离子体环境下的扫描隧道显微镜(STM)。该装置由一个STM系统和一个射频(RF)(430 MHz)等离子体产生系统组成，该系统安装在带有旋转泵的真空室中。一种分辨率为10毫微微安培的特殊放大器。隧道电流测量最高可达1KV。为了防止来自等离子体的噪声电流，铂-Ir探头尖端使用溶胶凝胶法涂上环氧脂和中空玻璃，但在大约3微米的尖端周围除外。在常规辉光等离子体条件下，经过1800秒的等离子体曝光，等离子体产生的噪声电流小于0.1nA。利用该装置，在射频、低压(0.3Tbrr)空气辉光等离子体下获得了高定向热解石墨(HOPG)的纳米级台阶结构和原子图像。我们还讨论了STM提示对于成功的、现实的“原位”观察的作用。

项目成果

Y.Takamura, K.Hayasaki, K.Terashima, T.Yoshida: "Claster size measurement using microtrench method in a thermal plasma flash evaporation process." J.Vac.Sci.Technol.B. Vol15,N3. 558-565 (1997)

Y.Takamura、K.Hayasaki、K.Terashima、T.Yoshida：“在热等离子体闪蒸工艺中使用微沟槽方法测量碎石尺寸。”

K.Terashima: "HIGH RATE DEPOSITION OF THICK EPITAXIAL FILMS BY THERMAL PLASMA FLASH DEPOSITION" Pure and Applied Chemistry. 70/6. 1193-1197 (1998)

K.Terashima：“通过热等离子体闪光沉积实现厚外延薄膜的高速率沉积”纯粹与应用化学。

服部 伴之: "ホットクラスターエピタキシーによる高温超伝導体YBCO厚膜作製" 日本金属学会誌. 63/1. 68-73 (1999)

Tomoyuki Hattori：“通过热团簇外延制备高温超导体 YBCO 厚膜”，日本金属学会杂志 63/1（1999）。

K.Terashima: "Scanning tunneling microscopy operating under a plasma environment" Thin Solid Films. (印刷中). (1999)

K.Terashima：“在等离子体环境下运行的扫描隧道显微镜”薄固体薄膜（1999 年出版）。

服部伴之: "ホットクラスターエピタキシーによる高温超伝導体YBCO厚膜作製" 日本金属学会誌. 63・11. 68-73 (1999)

Tomoyuki Hattori：“通过热簇外延法制造高温超导体YBCO厚膜”日本金属学会杂志63・11（1999）。