权益分类	功能权益	普通用户	{{item.name}}会员
{{category.name}}	{{benefitItem.name}}

Gallium Nitride Single Crystal Growth by Flux Method

助熔剂法生长氮化镓单晶

基本信息

批准号：
12555175
负责人：
SHIMADA Masahiko
金额：
$ 8.45万
依托单位：
Tohoku University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
2000
资助国家：
日本
起止时间：
2000 至 2002
项目状态：
已结题

项目摘要

Colorless transparent platelet single crystals with a maximum area of 10.0 X 5.0mm^2 by 0.03-0.1 mm thick was obtained at 750℃, 5Mpa of N2 for 360h and 0.60 of Na/(Ga+Ns)mole ratio (γ_<Na>). At 800℃, 3MPa of N_2 for 250h and γ_<Na>=0.60, colorless transparent prismatic crystals having a size of 1.0x0.5x0.5 mm^3 were obtained. Prismatic single crystals with 1.0xO.5x0.5 mm3 size were also obtained at 750℃, 5MPa of N_2 for 450h and γ_<Na>=0.54. The morphology of GaN single crystals tended to change from platelet to prismatic with increasing growth temperature, decreasing N_2 pressure and decreasing γ_<Na>.The fill width at half-maximum (FWHM) of the rocking curve measured for O004 X-ray diffraction peak was 25 arcsec, for 1 mm size platelet crystals and 32 arcsec, for 3 mm size platelet crystals. Hall measurements were carried out by the van der Pauw technique for the platelet crystals having a size of 1x1x0.2 mm^3. The concentration of free electrons in the crystal was 1-2x10^<18>cm-^3 and the mobility was 100 cm^2V-^1S-^1 at room temperature. The electrical conductivity was about 25 Ω-1cm-1 and almost independent of temperature between 120 and 350 K. The near band-edge emission of GaN was observed at 365 nm (3.4eV) by CL spectroscopy. No bands or peaks except the peak from the near band emission were observed. These results indicate the high quality of the GaN single crystals synthesized in this study.

在Na/（Ga+Ns）摩尔比（γ_）为0.60、N_2压力为5 MPa、750℃、保温360小时的条件下，获得了无色透明片状单晶，最大面积为10.0 × 5.0mm^2，厚度为0.03- 0.1mm<Na>。在800℃、3 MPa、γ_ =0.60、N_2气氛下保温250 h<Na>，得到无色透明的棱柱形晶体，晶体尺寸为1.0 × 0.5 × 0.5mm^3。在750℃，5 MPa的N_2气氛中，γ_（10）=0.54，保温450 h，也得到了尺寸为1.0 × 0.5 × 0.5mm ~ 3的棱柱形单晶<Na>。随着生长温度的升高、N_2气压的降低和γ_的减小，GaN单晶的形貌有从片晶向棱柱形转变<Na>的趋势，O 004 X射线衍射峰的半高宽（FWHM）为25弧秒（1 mm片晶）和32弧秒（3 mm片晶）。霍尔测量是通过货车德堡技术对尺寸为1 × 1 × 0.2 mm ^3的片状晶体进行的。晶体中自由电子的浓度为1- 2 × 10 ^<18>cm-^3，室温下迁移率为100 cm ^2 V-^1S-^1。电导率约为25 Ω-1cm-1，在120 ~ 350 K范围内与温度几乎无关。用化学发光光谱在365 nm（3.4eV）处观察到GaN的近带边发射。除了来自近带发射的峰之外，没有观察到带或峰。这些结果表明，在本研究中合成的GaN单晶的高质量。