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Gallium Nitride Single Crystal Growth by Flux Method

助熔剂法生长氮化镓单晶

基本信息

批准号：
12555175
负责人：
SHIMADA Masahiko
金额：
$ 8.45万
依托单位：
Tohoku University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
2000
资助国家：
日本
起止时间：
2000 至 2002
项目状态：
已结题

项目摘要

Colorless transparent platelet single crystals with a maximum area of 10.0 X 5.0mm^2 by 0.03-0.1 mm thick was obtained at 750℃, 5Mpa of N2 for 360h and 0.60 of Na/(Ga+Ns)mole ratio (γ_<Na>). At 800℃, 3MPa of N_2 for 250h and γ_<Na>=0.60, colorless transparent prismatic crystals having a size of 1.0x0.5x0.5 mm^3 were obtained. Prismatic single crystals with 1.0xO.5x0.5 mm3 size were also obtained at 750℃, 5MPa of N_2 for 450h and γ_<Na>=0.54. The morphology of GaN single crystals tended to change from platelet to prismatic with increasing growth temperature, decreasing N_2 pressure and decreasing γ_<Na>.The fill width at half-maximum (FWHM) of the rocking curve measured for O004 X-ray diffraction peak was 25 arcsec, for 1 mm size platelet crystals and 32 arcsec, for 3 mm size platelet crystals. Hall measurements were carried out by the van der Pauw technique for the platelet crystals having a size of 1x1x0.2 mm^3. The concentration of free electrons in the crystal was 1-2x10^<18>cm-^3 and the mobility was 100 cm^2V-^1S-^1 at room temperature. The electrical conductivity was about 25 Ω-1cm-1 and almost independent of temperature between 120 and 350 K. The near band-edge emission of GaN was observed at 365 nm (3.4eV) by CL spectroscopy. No bands or peaks except the peak from the near band emission were observed. These results indicate the high quality of the GaN single crystals synthesized in this study.

在750℃、5Mpa N2、0.60 Na/(Ga+Ns)摩尔比（γ_<Na>）条件下，制得面积为10.0 × 5.0mm^2、厚度为0.03 ~ 0.1 mm的无色透明血小板单晶。在800℃，3MPa N_2, 250h, γ_<Na>=0.60条件下，制得尺寸为1.0 × 0.5 × 0.5 mm^3的无色透明棱柱状晶体。在750℃，5MPa N_2, 450h, γ_<Na>=0.54条件下，得到了尺寸为1.0 × 0.5 × 0.5 mm3的棱柱形单晶。随着生长温度的升高、N_2压力的降低和γ <Na>的减小，GaN单晶的形貌有由血小板向棱柱形转变的趋势。O004 x射线衍射峰的半最大填充宽度（FWHM）为25 arcsec，为1 mm尺寸的血小板晶体，为32 arcsec，为3 mm尺寸的血小板晶体。利用van der Pauw技术对尺寸为1x1x0.2 mm^3的血小板晶体进行了霍尔测量。晶体中自由电子的浓度为1-2x10^<18>cm-^3，迁移率为100 cm^2V-^1S-^1。电导率约为25 Ω-1cm-1，在120至350 K之间几乎与温度无关。用CL光谱法在365 nm （3.4eV）处观察到GaN的近带边发射。除了近波段发射的峰外，没有观察到任何波段或峰。这些结果表明本研究合成的氮化镓单晶具有较高的质量。