Gallium Nitride Single Crystal Growth by Flux Method

助熔剂法生长氮化镓单晶

基本信息

  • 批准号:
    12555175
  • 负责人:
  • 金额:
    $ 8.45万
  • 依托单位:
  • 依托单位国家:
    日本
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
  • 财政年份:
    2000
  • 资助国家:
    日本
  • 起止时间:
    2000 至 2002
  • 项目状态:
    已结题

项目摘要

Colorless transparent platelet single crystals with a maximum area of 10.0 X 5.0mm^2 by 0.03-0.1 mm thick was obtained at 750℃, 5Mpa of N2 for 360h and 0.60 of Na/(Ga+Ns)mole ratio (γ_<Na>). At 800℃, 3MPa of N_2 for 250h and γ_<Na>=0.60, colorless transparent prismatic crystals having a size of 1.0x0.5x0.5 mm^3 were obtained. Prismatic single crystals with 1.0xO.5x0.5 mm3 size were also obtained at 750℃, 5MPa of N_2 for 450h and γ_<Na>=0.54. The morphology of GaN single crystals tended to change from platelet to prismatic with increasing growth temperature, decreasing N_2 pressure and decreasing γ_<Na>.The fill width at half-maximum (FWHM) of the rocking curve measured for O004 X-ray diffraction peak was 25 arcsec, for 1 mm size platelet crystals and 32 arcsec, for 3 mm size platelet crystals. Hall measurements were carried out by the van der Pauw technique for the platelet crystals having a size of 1x1x0.2 mm^3. The concentration of free electrons in the crystal was 1-2x10^<18>cm-^3 and the mobility was 100 cm^2V-^1S-^1 at room temperature. The electrical conductivity was about 25 Ω-1cm-1 and almost independent of temperature between 120 and 350 K. The near band-edge emission of GaN was observed at 365 nm (3.4eV) by CL spectroscopy. No bands or peaks except the peak from the near band emission were observed. These results indicate the high quality of the GaN single crystals synthesized in this study.
在Na/(Ga+Ns)摩尔比(γ_)为0.60、N_2压力为5 MPa、750℃、保温360小时的条件下,获得了无色透明片状单晶,最大面积为10.0 × 5.0mm^2,厚度为0.03- 0.1mm<Na>。在800℃、3 MPa、γ_ =0.60、N_2气氛下保温250 h<Na>,得到无色透明的棱柱形晶体,晶体尺寸为1.0 × 0.5 × 0.5mm^3。在750℃,5 MPa的N_2气氛中,γ_(10)=0.54,保温450 h,也得到了尺寸为1.0 × 0.5 × 0.5mm ~ 3的棱柱形单晶<Na>。随着生长温度的升高、N_2气压的降低和γ_的减小,GaN单晶的形貌有从片晶向棱柱形转变<Na>的趋势,O 004 X射线衍射峰的半高宽(FWHM)为25弧秒(1 mm片晶)和32弧秒(3 mm片晶)。霍尔测量是通过货车德堡技术对尺寸为1 × 1 × 0.2 mm ^3的片状晶体进行的。晶体中自由电子的浓度为1- 2 × 10 ^<18>cm-^3,室温下迁移率为100 cm ^2 V-^1S-^1。电导率约为25 Ω-1cm-1,在120 ~ 350 K范围内与温度几乎无关。用化学发光光谱在365 nm(3.4eV)处观察到GaN的近带边发射。除了来自近带发射的峰之外,没有观察到带或峰。这些结果表明,在本研究中合成的GaN单晶的高质量。

项目成果

期刊论文数量(46)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
M. Aoki, H. Yamane, M. Shimada, S. Sarayama and F.J. Salvo: "Conditions for seeded growth of GaN crystals by the Na flux method"Materials Letters. 56. 660-664 (2002)
M. Aoki、H. Yamane、M. Shimada、S. Sarayama 和 F.J. Salvo:“通过 Na 助熔剂方法进行 GaN 晶体晶种生长的条件”材料快报。
  • DOI:
  • 发表时间:
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  • 影响因子:
    0
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  • 通讯作者:
Takashi Sekiguchi: "Gathodluminescence study of h-and c-GaN single crystals grown by Na or K flux"Science and Technology of Advanced Materials. 3. 91-94 (2002)
Takashi Sekiguchi:“Na或K助熔剂生长的h-和c-GaN单晶的阴极发光研究”先进材料科学与技术。
  • DOI:
  • 发表时间:
  • 期刊:
  • 影响因子:
    0
  • 作者:
  • 通讯作者:
Masato Aoki: "Conditions for seeded growth of GaN crystals by the Na flux method"Materials Letters. 56. 660-664 (2002)
Masato Aoki:“通过 Na 熔剂法进行 GaN 晶体晶种生长的条件”材料快报。
  • DOI:
  • 发表时间:
  • 期刊:
  • 影响因子:
    0
  • 作者:
  • 通讯作者:
M. Aoki, H. Yamane, M. Shimada, S. Sarayama and F.J. DiSalvo: "Growth Conditions and Morphology of GaN Single Crystals Fabricated by the Na Flux Method"Journal of Ceramic Society of Japan. 109. 858-862 (2000)
M. Aoki、H. Yamane、M. Shimada、S. Sarayama 和 F.J. DiSalvo:“Na 助熔剂法制造的 GaN 单晶的生长条件和形态”日本陶瓷学会杂志。
  • DOI:
  • 发表时间:
  • 期刊:
  • 影响因子:
    0
  • 作者:
  • 通讯作者:
Hisanori Yamane: "GaN single crystal growth from a Na-Ga melt"Journal of Materials Science. 35. 801-805 (2000)
Hisanori Yamane:“从 Na-Ga 熔体生长 GaN 单晶”材料科学杂志。
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  • 期刊:
  • 影响因子:
    0
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SHIMADA Masahiko其他文献

SHIMADA Masahiko的其他文献

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{{ truncateString('SHIMADA Masahiko', 18)}}的其他基金

Altered brain volume in neuropathic pain patients
神经性疼痛患者的脑容量改变
  • 批准号:
    16K11743
  • 财政年份:
    2016
  • 资助金额:
    $ 8.45万
  • 项目类别:
    Grant-in-Aid for Scientific Research (C)
Development of the method of treatment for neuropathic pain -Basic study of the effect of iontophoresis-
神经性疼痛治疗方法的开发-离子电渗疗法效果的基础研究-
  • 批准号:
    22592253
  • 财政年份:
    2010
  • 资助金额:
    $ 8.45万
  • 项目类别:
    Grant-in-Aid for Scientific Research (C)
A Study on the intravenous sedation with propofol - Function of Swallowing, BIS monitor and blood concentration of propofol -
异丙酚静脉镇静研究-吞咽功能、BIS监测及异丙酚血药浓度-
  • 批准号:
    16591997
  • 财政年份:
    2004
  • 资助金额:
    $ 8.45万
  • 项目类别:
    Grant-in-Aid for Scientific Research (C)
A Study on the intravenous sedation with propofal - BIS monitor and blood concentration of propofol
丙泊酚静脉镇静-BIS监测及丙泊酚血药浓度研究
  • 批准号:
    13672095
  • 财政年份:
    2001
  • 资助金额:
    $ 8.45万
  • 项目类别:
    Grant-in-Aid for Scientific Research (C)
Synthesis and Characterization of Multi-Component Metal Nitrides
多组分金属氮化物的合成与表征
  • 批准号:
    13450263
  • 财政年份:
    2001
  • 资助金额:
    $ 8.45万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
Study on Synthesis and Crystal Structure of Rare-Earth Calcium Silicate
稀土硅酸钙的合成及晶体结构研究
  • 批准号:
    10450238
  • 财政年份:
    1998
  • 资助金额:
    $ 8.45万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B).
Study on Fabrication of high Luminous Materials for high Performance Display Devices
高性能显示器件用高发光材料的制备研究
  • 批准号:
    09555187
  • 财政年份:
    1997
  • 资助金额:
    $ 8.45万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
Study on Stress-Induced Phase Transformation of Rare Earth Aluminates
稀土铝酸盐应力诱导相变研究
  • 批准号:
    07455262
  • 财政年份:
    1995
  • 资助金额:
    $ 8.45万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
Study on Pressure Sintering of beta-FeSi_2 with highly Efficient Thermoelectric Properties
高效热电性能β-FeSi_2的压力烧结研究
  • 批准号:
    06555266
  • 财政年份:
    1994
  • 资助金额:
    $ 8.45万
  • 项目类别:
    Grant-in-Aid for Scientific Research (A)
Study on Fabrication of Intense Fluorescent Oxides doped with Rare Earths
稀土掺杂强荧光氧化物的制备研究
  • 批准号:
    05453073
  • 财政年份:
    1993
  • 资助金额:
    $ 8.45万
  • 项目类别:
    Grant-in-Aid for General Scientific Research (B)

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