Study of excellent wear-resistive property of amorphous carbon nitride films

[非晶氮化碳薄膜的合成]在本研究中，我们使用以下沉积方法：（I）屏蔽电弧离子镀（II）电感耦合射频等离子体CVD和（III）紫外光CVD[非晶氮化碳薄膜的化学键合状态]我们利用从头算分子轨道方法对非晶氮化碳薄膜的化学键合状态进行了分析，并利用IR，拉曼，ESR和固态NMR测量。基本上，在（I）、（II）中合成的样品具有含氮的sp2 C（sp2 C：N）网络。氮原子的存在降低了薄膜的规则性。衬底偏压导致N原子的选择性溅射，同时也消除了诸如-H和N-N的末端。前者与sp2 C：N的石墨化相关，而后者在网络单元之间产生交联键。[键合状态与机械性能之间的相关性]可以清楚地看出，具有低规则性的sp2 C：N网络和交联键的存在提供了非晶氮化碳膜的优异机械性能。

[Synthesis of amorphous carbon nitride films] In this study, we used the following deposition method ; (I) Shielded arc ion plating (II) Inductively-coupled rf plasma CVD and (III) Vacuum-UltraViolet photo CVD[Chemical bonding states of amorphous carbon nitride films] We carried out analysis of chemical bonding states of amorphous carbon nitride films supported by Ab-initio molecular orbital methods, as well as IR, Raman, ESR and solid-state NMR measurements. Fundamentally, the samples synthesized in (I), (II) have nitrogen-contained sp2 C (sp2 C:N) networks. The existence of nitrogen atoms degrades the regularity in the films. The substrate bias causes selective sputtering of the N atoms, and also elimination of the terminations such as -H and ≡N at the same time. The former is correlated with graphitization of the sp2 C:N, whereas the latter creates cross-linkage bondings among the network units.[Correlation between bondingstates and mechanical properties] It was made clear that the sp2 C:N networks with low regularity and the existence of the cross-linkage bondings provide the excellent mechanical properties of the amorphous carbon nitride films.