Study of excellent wear-resistive property of amorphous carbon nitride films

非晶氮化碳薄膜优异耐磨性能的研究

• 批准号: 13450293
• 负责人: TAKAI Osamu
• 金额: $ 9.15万
• 依托单位: Nagoya University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 2001
• 资助国家: 日本
• 起止时间: 2001 至 2003
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-13450293/
• 关键词: carbon nitride; arc plasma; amorphous; super hard material; nano-indentation; shielded arc ion plating; wear-resistive material; chemical bonding states; 耐摩耗特性

[Synthesis of amorphous carbon nitride films] In this study, we used the following deposition method ; (I) Shielded arc ion plating (II) Inductively-coupled rf plasma CVD and (III) Vacuum-UltraViolet photo CVD[Chemical bonding states of amorphous carbon nitride films] We carried out analysis of chemical bonding states of amorphous carbon nitride films supported by Ab-initio molecular orbital methods, as well as IR, Raman, ESR and solid-state NMR measurements. Fundamentally, the samples synthesized in (I), (II) have nitrogen-contained sp2 C (sp2 C:N) networks. The existence of nitrogen atoms degrades the regularity in the films. The substrate bias causes selective sputtering of the N atoms, and also elimination of the terminations such as -H and ≡N at the same time. The former is correlated with graphitization of the sp2 C:N, whereas the latter creates cross-linkage bondings among the network units.[Correlation between bondingstates and mechanical properties] It was made clear that the sp2 C:N networks with low regularity and the existence of the cross-linkage bondings provide the excellent mechanical properties of the amorphous carbon nitride films.

【非晶态氮化碳薄膜的合成】在本研究中，我们采用了以下沉积方法；(I)屏蔽电弧离子镀（II）电感耦合射频等离子体CVD和（III）真空紫外光CVD[非晶态氮化碳薄膜的化学键态]我们采用Ab-initio分子轨道方法对非晶态氮化碳薄膜的化学键态进行了分析，并进行了IR、拉曼、ESR和固态核磁共振测量。(I)、（II）中合成的样品基本上具有含氮的sp2 C （sp2 C:N）网络。氮原子的存在降低了薄膜的规整性。衬底偏压导致N原子的选择性溅射，同时也消除了-H和≡N等终止。前者与sp2 C:N的石墨化有关，而后者在网络单元之间产生交联键。[键态与力学性能的相关性]研究表明，低规则度的sp2 C:N网络和交联键的存在为非晶态氮化碳薄膜提供了优异的力学性能。

项目成果

K.H.Lee, H.Sugimura, Y.Inoue, O.Takai: "Nano-Tribological properties of Carbon-based amorphous Thin Films prepared by Shielded Arc Ion Plating"Abst. Eighth Int. Conf. on Plasma Surface Engineering. 1. 240-240 (2002)

K.H.Lee、H.Sugimura、Y.Inoue、O.Takai：“屏蔽电弧离子镀制备的碳基非晶薄膜的纳米摩擦学性能”摘要。

H. Tamoto, K. H. Lee, H. Sugimura, O. Takai: "Electron Field Emission from Carbon Nitride Thin Films Synthesized by Shielded Arc Ion Plating with Applying a Pulsed Substrate Bias"Abst. Frontiers of Surface Engineering 2001. 118 (2001)

H. Tamoto、K. H. Lee、H. Sugimura、O. Takai：“应用脉冲衬底偏压的屏蔽电弧离子镀合成氮化碳薄膜的电子场发射”摘要。

R.Ohta, K.H.Lee, N.Saito, Y.Inoue, H.Sugimura, O.Takai: "Origin of N 1s spectrum in amorphous carbon nitride obtained by X-ray photoelectron spectroscopy"Thin Solid Films. 434. 296-302 (2003)

R.Ohta、K.H.Lee、N.Saito、Y.Inoue、H.Sugimura、O.Takai：“通过 X 射线光电子能谱获得的无定形碳氮化物中 N 1s 光谱的起源”固体薄膜。

K.H.Lee, R.Ohta, H.Sugimura, Y.Inoue O.Takai: "Mechanical Characteristics of Hydrogenated Amorphous Carbon and Carbon Nitride Films Deposited by Shielded Arc Ion Plating"Abst. Asian Symp. Ion and Plasma Surface Finishing. 1. 38-38 (2002)

K.H.Lee、R.Ohta、H.Sugimura、Y.Inoue O.Takai：“屏蔽电弧离子镀沉积的氢化非晶碳和氮化碳薄膜的机械特性”摘要。

太田理一郎, 李庚晃, 齋藤永宏, 井上泰志, 杉村博之, 高井治: "非経験的分子軌道法支援によるアモルファス窒化炭素膜の化学結合状態:X線光電子分光スペクトルの解釈"表面技術. 54. 769-775 (2003)

Riichiro Ota、Gengaki Lee、Nagahiro Saito、Yasushi Inoue、Hiroyuki Sugimura、Osamu Takai：“从头开始分子轨道方法支持的非晶氮化碳薄膜的化学键合状态：X射线光电子能谱的解释”表面技术54.769。 -775 (2003)