Development of Transparent Super Water-repellent Films by Composing Surface Fine Structure
通过复合表面精细结构开发透明超防水薄膜
基本信息
- 批准号:10450257
- 负责人:
- 金额:$ 7.1万
- 依托单位:
- 依托单位国家:日本
- 项目类别:Grant-in-Aid for Scientific Research (B)
- 财政年份:1998
- 资助国家:日本
- 起止时间:1998 至 1999
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
This research project aimed at an establishment of a method to control both the surface morphology and the chemical bonding states of the water-repellent films in plasma CVD processes and at a development of a technique ton deposit transparent, hard and super water-repellent films at low temperature over wide area.We succeeded in in-situ measurement of infrared (IR) absorption spectra by infrared reflection absorption spectroscopy (IRRAS) at an incident angle of 80 degree using an rf plasma CVD system combined with a Fourier-transform infrared spectrometer (FTIR). Especially, selecting p-polarized IR light lead to measurement at a high sensitivity. We could obtain IR spectra even for a monolayer of organsilicon molecules. By means of this method, we established a deposition technique to control the chemical bonding states of the films in real time.It has been supposed that super water-repellent films cannot be synthesized with mixture of an oxygen has gas because of formation of hydrophobic Si-OH groups. We made clear, however, that super water repellency can be realized at relatively higher total pressure, in the range of 150-200 Pa, with the mixture of oxygen. From this result, it can be expected that the formation of water-repellent films with hardness. The films have super water-repellency although they include Si-OH functional groups. The reason has not been elucidated and can be an interesting research object.The water repellency was observed by means of environmental scanning electron microscope. The contact angle was over 150 degree even for the water drops in μm size.
本研究旨在建立一种在等离子体CVD过程中同时控制防水薄膜表面形貌和化学键状态的方法,并开发一种大面积低温沉积透明、坚硬和超防水薄膜的技术。利用射频等离子体CVD系统结合傅里叶变换红外光谱仪(FTIR),成功地在80°入射角下用红外反射吸收光谱(IRRAS)原位测量了红外吸收光谱。特别是选择p偏振红外光,使测量具有较高的灵敏度。我们甚至可以获得有机硅分子的单分子膜的红外光谱。通过这种方法,我们建立了一种沉积技术来实时控制薄膜的化学键状态,假设由于形成疏水的Si-OH基团,在氧气和气体的混合物中不能合成超级憎水薄膜。然而,我们清楚地表明,在相对较高的总压下,在150-200帕的范围内,与氧气的混合物可以实现超级憎水。从这一结果可以预期,形成具有硬度的拒水膜。虽然膜中含有Si-OH官能团,但具有超强的拒水性能。其原因尚未阐明,可能是一个有趣的研究对象。通过环境扫描电子显微镜观察了其拒水性能。即使是μm大小的水滴,接触角也在150度以上。
项目成果
期刊论文数量(24)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
Yasushi Inoue: "Infrared Absorption Measurement During Low-temperature PECVD of Silicon-oxide Films"J.Korean Inst.Surf.Eng.. 32. 297-302 (1999)
Yasushi Inoue:“氧化硅薄膜低温 PECVD 过程中的红外吸收测量”J.Korean Inst.Surf.Eng.. 32. 297-302 (1999)
- DOI:
- 发表时间:
- 期刊:
- 影响因子:0
- 作者:
- 通讯作者:
Atushi Hozumi: "Fluoroalkylsilane Monolayers Formed by Chemical Vapor Surface Modification on Hydroxylated Oxide Surfaces"Langmuir. 15. 7600-7604 (1999)
Atushi Hozumi:“在羟基氧化物表面上通过化学蒸气表面改性形成氟烷基硅烷单分子层”Langmuir。
- DOI:
- 发表时间:
- 期刊:
- 影响因子:0
- 作者:
- 通讯作者:
Yasushi Inoue: "Infrared Absorption Mneasurement During Low-temperature PECVD o Silicon-oxide Films"J. Korean Inst. Surf. Eng.. 32. 297-302 (1999)
Yasushi Inoue:“低温 PECVD 氧化硅薄膜中的红外吸收测量”J。
- DOI:
- 发表时间:
- 期刊:
- 影响因子:0
- 作者:
- 通讯作者:
Hiroyuki Sugimura: "Growth of Mesoporous Silica Films on Hydrophilic or Hydrophobic Surfaces"J. Surface Finishing Soc. Jpn. 50. 574-575 (1999)
Hiroyuki Sugimura:“介孔二氧化硅薄膜在亲水或疏水表面上的生长”J。
- DOI:
- 发表时间:
- 期刊:
- 影响因子:0
- 作者:
- 通讯作者:
Atsushi Hozumi: "Fluoroalkylsilane Monolayers Formed by Chemical Vapor Surface Modification on Hydroxylated Oxide Surfaces"Langmuir. 15. 7600-7604 (1999)
Atsushi Hozumi:“在羟基氧化物表面上通过化学蒸气表面改性形成氟烷基硅烷单层”Langmuir。
- DOI:
- 发表时间:
- 期刊:
- 影响因子:0
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- 通讯作者:
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$ 7.1万 - 项目类别:
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Fabrication of passive surface to protein by physicochemical proteomics approach
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20246109 - 财政年份:2008
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$ 7.1万 - 项目类别:
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Control of Nano-Reaction Field by Bio-Probe Nanolithography
生物探针纳米光刻控制纳米反应场
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16206072 - 财政年份:2004
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Study of excellent wear-resistive property of amorphous carbon nitride films
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13450293 - 财政年份:2001
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$ 7.1万 - 项目类别:
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Synthesis and Nanotribology of Superhard Carbon Nitride Films
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10355028 - 财政年份:1998
- 资助金额:
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Preparation of Ultra Water-repellent Films with Transparency and Hardness by Plasma-enhanced CVD
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- 批准号:
08555171 - 财政年份:1996
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Nanoscale-controlled Plasma CVD of Metal-doped Semiconducting DLC Films
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- 批准号:
08455346 - 财政年份:1996
- 资助金额:
$ 7.1万 - 项目类别:
Grant-in-Aid for Scientific Research (B)
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