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Nanoscale-controlled Plasma CVD of Metal-doped Semiconducting DLC Films

金属掺杂半导体 DLC 薄膜的纳米级控制等离子体 CVD

基本信息

批准号：
08455346
负责人：
TAKAI Osamu
金额：
$ 3.78万
依托单位：
Nagoya University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
1996
资助国家：
日本
起止时间：
1996 至 1997
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-08455346/
关键词：
diamond like carbon plasma-enhanced CVD metal doping organometallic compound X-ray photoelectron spectroscopy electrical resistivity transmittance of light sputtering ダイアモンドライクカーボン

项目摘要

We synthesized metal-doped diamond like carbon (DLC) films by rf plasma-enhanced chemical vapor deposition (PECVD) using methane, hydrogen and an organometallic compound as gas sources. First, we used tetramethyltin (TMT) as a dopant source and investigated the film properties of tin-doped DLC films. Tin-carbon direct bonds are formed in the films, which is confirmed with X-ray photoelectron spectroscopy. The tin concentration in the films can be controlled by TMT partial pressure ratio, R (= (P_<TMT>/P_<Total>)*100 [%]). When R is over 0.2%, nanometer-size clusters of beta-tin phase are formed in the deposited films with random orientation. To avoid the formation of the clusters and dope tin at atomic size, the R value should be less than 0.2%, which led to the maximum Sn/C concentration ratio of 0.1 in the films. The electrical resistivity of the tin-doped DLC films is-10^3OMEGAcm, much lower than that of pure DLC films (-10^7OMEGAcm). Higher R value causes lower transmittance in infrared region.Next, we prepared gold-or copper-doped DLC films by a hybrid process of rf PECVD and rf sputtering. In the gold-doped DLC films, gold exists only in the state of metallic cluster. Gold-carbon direct bonds are not formed. On the other hand, small amount of copper-carbon bonds are found in the copper-doped films. The concentration of the dopant metal can be controlled by the number of metal tips located on an rf electrode. The electrical resistivity decreased drastically from 10^7OMEGAcm up to 1OMEGAcm with the increase in the metal concentration. We can vary the electrical resistivity of DLC films over a wide range of 8 order by doping a metallic element.These results mean that the doped metal can change the electrical properties of DLC films from insulating to semiconducting. This study reveals the possible application of DLC films to active electronic devices.

我们使用甲烷、氢气和有机金属化合物作为气源，通过射频等离子体增强化学气相沉积（PECVD）合成了金属掺杂的类金刚石碳（DLC）薄膜。首先，我们使用四甲基锡（TMT）作为掺杂剂源，研究了锡掺杂 DLC 薄膜的薄膜特性。 X射线光电子能谱证实了薄膜中形成了锡-碳直接键。膜中的锡浓度可以通过TMT分压比R（=（P_<TMT>/P_<Total>）*100[%]）来控制。当R超过0.2%时，沉积膜中会形成纳米尺寸的β-锡相簇，且取向随机。为了避免形成原子尺寸的团簇和掺杂锡，R值应小于0.2%，这导致薄膜中最大Sn/C浓度比为0.1。掺锡DLC薄膜的电阻率为-10^3OMEGAcm，远低于纯DLC薄膜（-10^7OMEGAcm）。 R值越高，红外区的透过率越低。接下来，我们通过射频PECVD和射频溅射的混合工艺制备了金或铜掺杂的DLC薄膜。在掺金DLC薄膜中，金仅以金属簇的状态存在。不形成金-碳直接键。另一方面，在铜掺杂薄膜中发现少量的铜-碳键。掺杂金属的浓度可以通过位于射频电极上的金属尖端的数量来控制。随着金属浓度的增加，电阻率从10^7OMEGAcm急剧下降到1OMEGAcm。通过掺杂金属元素，我们可以在8个量级的宽范围内改变DLC薄膜的电阻率。这些结果意味着掺杂金属可以将DLC薄膜的电性能从绝缘性改变为半导体性。这项研究揭示了 DLC 薄膜在有源电子设备中的可能应用。