Charge Sensitivity Control of Potentiometric Nanobiosensors

该项目的重点是更深入地了解纳米生物传感器的电荷检测机制。显然，传感器表面在电位型生物传感器的发展中起着关键作用。我们的目标是调查，控制和了解各自的传感器表面。有相当缺乏系统的实验工作，探索的表面参数α（对应于pH值/灵敏度）的作用与生物分子电荷灵敏度的理论预测。此外，非常基本的电化学设计原则在文献中往往被忽视。我们正计划开发一种新概念的电位纳米生物传感器。虽然可以常规地进行电位测量，但通常由于电位偏移的矛盾性质而出现并发症，该电位偏移也可以由许多伪影引起。因此，我们将开发一种基于超长纳米线的差分传感器设置，使用相同的纳米线作为传感器和参考元件。两个纳米线场效应晶体管（FET）的制造使用两个不同的表面参数α，因此两个不同的电荷灵敏度。这样做，大多数不希望的干扰将系统地抵消。这一新概念的有效性和可行性应在本项目中加以探讨。此外，我们的目标是深入了解电位生物传感器的操作一般和纳米线生物传感器可能受到的影响。这需要系统地表征和充分理解绝缘体/电解质界面，最后需要仔细分析各个纳米线FET的传感器响应。

The project is focused to get a deeper knowledge on the nanobiosensor charge detection mechanism. It is apparent that the sensor surface plays the key role in the development of potentiometric biosensors. We are aiming at investigating, controlling and understanding the respective sensor surfaces. There is a considerable lack of systematic experimental work that explores the theoretical predictions on the role of the surface parameter α (corresponding to pH value/sensitivity) with respect to biomolecule charge sensitivity. In addition, very basic electrochemical design principles are often ignored in literature. We are planning to develop a new concept of a potentiometric nanobiosensor. While the potentiometric measurements can be routinely performed, complications arise usually due to the ambivalent nature of the potential shift that can be caused also by a multitude of artifacts. Therefore, we will develop a differential sensor setup based on ultra-long nanowires using the same nanowire as sensor and reference element. The two nanowire field-effect transistors (FET) are fabricated using two different surface parameters α and hence two different charge sensitivities. Doing so, most undesired disturbances will systematically cancel out. The validity and feasibility of this new concept should be explored within this project. Further, we aim to gain insight into the operation of potentiometric biosensors in general and how nanowire biosensors are possibly affected. This requires a systematically characterized and well understood insulator/electrolyte interface and finally a careful analysis of the sensor responses from individual nanowire FETs.