Surface modification of Si and ZnO nanowires by atomic layer deposition and interface reaction investigated in the context of optics and electronics

在光学和电子学领域研究通过原子层沉积和界面反应对 Si 和 ZnO 纳米线进行表面改性

• 批准号: 5428604
• 负责人: Professorin Dr. Margit Zacharias
• 金额: --
• 依托单位: Institut für Mikrosystemtechnik (IMTEK)
• 依托单位国家: 德国
• 项目类别: Priority Programmes
• 财政年份: 2004
• 资助国家: 德国
• 起止时间: 2003-12-31 至 2010-12-31
• 项目状态: 已结题
• 来源: https://gepris.dfg.de/gepris/projekt/5428604?language=en
• 关键词: Surface; modification; Si; ZnO; nanowires

The aim of the project is the controlled growth of Si nanowires and the growth of Si/Ge based heterostructures. In the first part of the project a deeper understanding of the nanowire growth mechanism will be developed for vapor-liquid-solid growth in combination with the SiO assisted process, as well as for the pulsed laser deposition of nanowire and nanowire heterostructures. Early stages of the nanowire growth near to the substrate surface will be studied and the influence of different substrate orientations and substrate preparations will be shown. The nanowires and nanowire heterostructures will be analyzed in terms of interface quality, defects, abruptness, and optical and electrical properties. The conditions for controlled growth of Si nanowires will be investigated to achieve growth perpendicular to the substrate and to design heterostructures. After obtaining a better understanding of the wire growth mechanism, we will develop methods for selective growth of nanowires at specific positions by using different template approaches. The influence of the template on the nanowire growth as well as possible chemical reactions involved will be investigated. This work will be based on a number of cooperations within MPI Halle and the DFG Focus Program. In summary, the overall goal is the growth of the nanowires at a desired position with specific length and diameter, and the investigation and optimization of their structural, optical and electrical properties.

该项目的目标是控制硅纳米线的生长和硅/锗基异质结构的生长。在该项目的第一部分中，将更深入地了解纳米线生长机制，用于与 SiO2 辅助工艺相结合的气-液-固生长，以及纳米线和纳米线异质结构的脉冲激光沉积。将研究靠近基底表面的纳米线生长的早期阶段，并将显示不同基底方向和基底制备的影响。纳米线和纳米线异质结构将在界面质量、缺陷、突变以及光学和电学特性方面进行分析。将研究硅纳米线的受控生长条件，以实现垂直于衬底的生长并设计异质结构。在更好地了解线生长机制后，我们将开发使用不同模板方法在特定位置选择性生长纳米线的方法。将研究模板对纳米线生长的影响以及可能涉及的化学反应。这项工作将基于 MPI Halle 和 DFG 焦点计划之间的多项合作。总之，总体目标是在所需位置生长具有特定长度和直径的纳米线，并研究和优化其结构、光学和电学性能。