Active emitting 3D Photonic Crystals prepared by direct wafer bonding

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Periodic dielectric structures have the ability to affect the density of electro-magnetic states within their boundaries and suppress all modes for a range of frequencies partially or completely. In the proposed project we will produce 3-dimensional photonic crystals by combining deep UV lithography, electron beam writing techniques and direct wafer bonding for preparation of so-called wood pile structures using the high dielectric contrast of a Si/air structure. In this way, we will design a structure with a complete band gap in all three directions for the desired wavelength of 1.54 µm. Line structures based on single crystalline Si will be prepared using reactive plasma etching. Then, these structures will be face to face bonded in cross orientation using the method of direct wafer bonding. Afterwards, the Si substrate will be removed leaving the sub micrometer grid structure untouched. In this way the three dimensional structure will be developed layer by layer. The implementation of defects as well as active emitting sources are planed to demonstrate the active and passive waveguide properties of the structure. The optical characterization of the structures will be done by spectroscopic methods. Partly this will be realized using the possibilities established in the Photonic Crystal program.