Development of highly functionalized diamonds and their application to micro-reactor systems for special circumstances
高功能化金刚石的开发及其在特殊情况微反应器系统中的应用
基本信息
- 批准号:13555209
- 负责人:
- 金额:$ 8.32万
- 依托单位:
- 依托单位国家:日本
- 项目类别:Grant-in-Aid for Scientific Research (B)
- 财政年份:2001
- 资助国家:日本
- 起止时间:2001 至 2003
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
Diamond possesses unique physico-chemical characteristics including a large band gap and small heat capacity, and therefore has potential for numerous applications in a wide variety of areas. If modification of the surface of such diamonds with functional groups is achieved, diamonds would be expected to be quite unique sensors as well as micro-reactors. In this project, boron-doped diamond films were successfully synthesized on an indium substrate by a microwave plasma assisted chemical vapor deposition(MPCVD) method and were functionalized with amination after chlorination with chlorine.In order to synthesize a highly orientated diamond films, the iridium substrate was bais-treated by the constant-current mode to permit the formation of oriented diamond nuclei. As a result, the Hall mobility was closely related to the surface morophology of the diamond films. A Holl mobility of 340cm^<-2> V^<-1> s^<-1> and hole concentration of 2 x 10^<10> at 250 K was obtained for the hetroepitaxial boron-doped diamond film synthesized at a B/C ratio of 200ppm.A synthetic diamond powder was chlorinated with pure chlorine gas in a tube by irradiation with ultraviolet light. Then the resulting chlorinated diamond powder was aminated by pure ammonia gas at different temperature. As a result, formation of NH_4^+ on the surface of the diamond powder treated at room temperature was verified by diffuse reflectance infrared transform(DRIFT) spectroscopy. Amination at 373 K showed DRIFT peaks corresponding to C=N vibration and NH_2 scissoring. Most of nitrogen on the surface was present as imines, when amination was performed at 573K
金刚石具有独特的物理化学特性,包括大的带隙和小的热容量,因此在各个领域具有众多应用潜力。如果实现对此类金刚石表面进行官能团修饰,金刚石将有望成为非常独特的传感器和微反应器。本项目采用微波等离子体辅助化学气相沉积(MPCVD)方法在铟衬底上成功合成了掺硼金刚石薄膜,并通过氯气氯化后进行胺化功能化,为了合成高度取向的金刚石薄膜,采用恒流模式对铱衬底进行预处理,以形成取向金刚石核。结果表明,霍尔迁移率与金刚石薄膜的表面形貌密切相关。在<-2><-1><-1><10>B/C比为200 ppm的条件下,合成的掺硼金刚石薄膜在250 K下的霍尔迁移率为340 cm ↑ [2] V ↑ [3] s ↑ [2],空穴浓度为2 × 10 ↑ [4]。然后用纯氨气在不同温度下对氯化金刚石粉末进行胺化处理。结果表明,室温处理后的金刚石粉末表面形成了NH_4^+。在373 K下,胺化反应出现了C=N振动和NH_2剪切的DRIFT峰。在573 K下进行胺化反应时,表面氮主要以亚胺形式存在
项目成果
期刊论文数量(46)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
Ken-Ichiro SOTOWA, Tetsuo Amamoto, Akira SOBANA, Katsuki KUSAKABE, Toshihiko IMATO, Toshiki TSUBOTA: "Effect of treatment temperature on the amination of chlorinated diamond"Diamond and Related Materials. 13. 145-150 (2004)
Ken-Ichiro SOTOWA、Tetsuo Amamoto、Akira SOBANA、Katsuki KUSAKABE、Toshihiko IMATO、Toshiki TSUBOTA:“处理温度对氯化金刚石胺化的影响”金刚石和相关材料。
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Katsuki KUSAKABE, Akira SOBANA, Ken-Ichiro SOTOWA, Toshihiko IMATO, Toshiki TSUBOTA: "Electrical properties of boron-doped diamond films synthesized by MPCVD on an indium substrate"Diamond and Related Materials. 12. 1396-1401 (2003)
Katsuki KUSAKABE、Akira SOBANA、Ken-Ichiro SOTOWA、Toshihiko IMATO、Toshiki TSUBOTA:“在铟基底上通过 MPCVD 合成的掺硼金刚石薄膜的电性能”金刚石和相关材料。
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Toshiki Tasubota, Fukui T, Saito T, Kusakabe K, Shigeharu Morooka, Hidaki Maeda: "Surface morphology and electrical properties of boron-doped diamond films synthesized by microwave-assisted chemical vapor deposition using trime thylboron on diamond(100)su
Toshiki Tasubota、Fukui T、Saito T、Kusakabe K、Shigeharu Morooka、Hidaki Maeda:“利用三甲基硼在金刚石 (100)su 上微波辅助化学气相沉积合成的掺硼金刚石薄膜的表面形貌和电性能
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Katsuki KUSAKABE: "Preparation of Microchannel Palladium Membranes by Electrolysis"Microreaction Technology. 78-85 (2002)
Katsuki KUSAKABE:“电解制备微通道钯膜”微反应技术。
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- 影响因子:0
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Toshiki Tsubota, Masanori Ohta, Katsuki Kusakabe, Shigeharu Morooka, Midori Watanabe, Hideaki Maeda: "Heteroepitaxial growth of diamond on an iridium(100)substrate using microwave plasma-assisted chemical vapor deposition"Diamond and Related Materials. 9.
Toshiki Tsubota、Masanori Ohta、Katsuki Kusakabe、Shigeharu Morooka、Midori Watanabe、Hideaki Maeda:“使用微波等离子体辅助化学气相沉积在铱 (100) 基底上异质外延生长金刚石”金刚石和相关材料。
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IMATO Toshihiko其他文献
IMATO Toshihiko的其他文献
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{{ truncateString('IMATO Toshihiko', 18)}}的其他基金
Development of an edge emission device using organic semiconductors in solution and its application to photometric micro-flow analysis
溶液中有机半导体边缘发射装置的开发及其在光度微流分析中的应用
- 批准号:
25620117 - 财政年份:2013
- 资助金额:
$ 8.32万 - 项目类别:
Grant-in-Aid for Challenging Exploratory Research
Development ofhighly sensitive influenza virus sensor base on Pressure-light conversion element
基于压光转换元件的高灵敏流感病毒传感器的研制
- 批准号:
22550076 - 财政年份:2010
- 资助金额:
$ 8.32万 - 项目类别:
Grant-in-Aid for Scientific Research (C)
Development of multi-channel type surface plasmon resonance sensor and its application to simultaneous determination of allergy related substances
多通道型表面等离子体共振传感器的研制及其在过敏相关物质同时测定中的应用
- 批准号:
16350047 - 财政年份:2004
- 资助金额:
$ 8.32万 - 项目类别:
Grant-in-Aid for Scientific Research (B)
Development of selective, rapid and simple sensing system for oraganohalogen Compound
有机卤素化合物选择性、快速、简单传感系统的开发
- 批准号:
11305060 - 财政年份:1999
- 资助金额:
$ 8.32万 - 项目类别:
Grant-in-Aid for Scientific Research (A)
Development of chemical sensors for concentrated solutions
开发浓缩溶液化学传感器
- 批准号:
09650892 - 财政年份:1997
- 资助金额:
$ 8.32万 - 项目类别:
Grant-in-Aid for Scientific Research (C)
Development of flow-through chemical sensors for process control
开发用于过程控制的流通式化学传感器
- 批准号:
07555264 - 财政年份:1995
- 资助金额:
$ 8.32万 - 项目类别:
Grant-in-Aid for Scientific Research (A)
Development of potentiometric flow titration for nonaqueous solvent system
非水溶剂体系电位流滴定法的研制
- 批准号:
06650935 - 财政年份:1994
- 资助金额:
$ 8.32万 - 项目类别:
Grant-in-Aid for General Scientific Research (C)
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