A new blockade mechanism in q semiconductor quantum dot owing to nano-electro mechanical effects

自由悬浮单电子晶体管中电子输运的阻滞现象~ SET！预计。施加在其操作上的电压诱导作用于SET的机电力，在临界电压上引起结构变形和倒塌。在结构不稳定开始时，电特性对SET上的电荷波动变得敏感，导致电特性的变化阻碍了电子在零偏压区周围通过SET的传输。

A blockade phenomenon for electron transport in a freely suspended single-electron transistor 〜SET! is predicted. Voltages applied for its operation induce electromechanical forces acting on the SET, giving rise to structural deformation and collapse over a critical voltage. The electric characteristics become sensitive to charge fluctuations on the SET at the onset of the structural instability, leading to changes in the electrical characteristics that hinder electron transport through the SET around the zero-bias-voltage region.