A new blockade mechanism in q semiconductor quantum dot owing to nano-electro mechanical effects

纳米机电效应q半导体量子点的新封锁机制

• 批准号: 15510109
• 负责人: NISHIGUCHI Norihiko
• 金额: $ 1.47万
• 依托单位: Hokkaido University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 2003
• 资助国家: 日本
• 起止时间: 2003 至 2004
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-15510109/
• 关键词: Nanoelectro mechanical systems; single electron transistor; deformation blockade; ナノ電気機械系; ブロッケード現象; 変形効果

A blockade phenomenon for electron transport in a freely suspended single-electron transistor 〜SET! is predicted. Voltages applied for its operation induce electromechanical forces acting on the SET, giving rise to structural deformation and collapse over a critical voltage. The electric characteristics become sensitive to charge fluctuations on the SET at the onset of the structural instability, leading to changes in the electrical characteristics that hinder electron transport through the SET around the zero-bias-voltage region.

自由悬浮单电子晶体管中电子输运的阻塞现象！是可以预测到的。工作时施加的电压会引起作用在机组上的机电作用力，在临界电压以上引起结构变形和坍塌。在结构不稳定开始时，电特性对SET上的电荷波动变得敏感，导致电特性的变化阻碍了电子通过SET在零偏压区域周围的传输。

项目成果

Electron transport and phonons in quantum wires

量子线中的电子传输和声子

• 发表时间: 2005
• 期刊: Handbook of Semiconductor Nanostructures and Devices (edited by A.A.Balandin et al.)(The American Scientific Publishers)
• 作者: N.Nishiguchi

Structural instability and tunable vibration frequency of an electromechanical resonator

机电谐振器的结构不稳定性和可调谐振动频率

• 发表时间: 2004
• 期刊: physica status solidi (c) 1
• 作者: N.Nishiguchi;N.Nishiguchi
• 通讯作者: N.Nishiguchi

Handbook of Semiconductor Nanostructures and Devices (edited by A.A.Balandin et al.)

半导体纳米结构和器件手册（A.A.Balandin 等编辑）

• 发表时间: 2005
• 作者: N.Nishiguchi;N.Nishiguchi;N.Nishiguchi;N.Nishiguchi;N.Nishiguchi;N.Nishiguchi;N.Nishiguchi;N.Nishiguchi
• 通讯作者: N.Nishiguchi

Elastic deformation blockade in a single-electron transistor

• DOI: 10.1103/physrevb.68.121305
• 发表时间: 2003-09
• 期刊: Physical Review B
• 影响因子: 3.7
• 作者: N. Nishiguchi

Norihiko Nishiguchi: "Elastic deformation blockade in a single-electron transistor"Phys.Rev.B. 68. 121305-1-121305-4 (2003)

Norihiko Nishiguchi：“单电子晶体管中的弹性变形封锁”Phys.Rev.B。