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DEVELOPMENT OF CHARACTERIZATION METHODS FRO SILICON CRYSTALS WITH THE USE OF HYDROGEN INCORPORATION

掺氢硅晶体表征方法的开发

基本信息

批准号：
09650024
负责人：
TOKUDA Yutaka
金额：
$ 2.11万
依托单位：
AICHI INSTITUTE OF TECHNOLOGY
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (C)
财政年份：
1997
资助国家：
日本
起止时间：
1997 至 1999
项目状态：
已结题

项目摘要

The purpose of the present research is to evaluate electrically-active defects and measure the quantity of oxygen in heavily boron-dropped pィイD1+ィエD1 CZ silicon wafers. An efficient method for defect characterization, DLTS, was not carried out for pィイD1+ィエD1 wafers because of difficulties of fabrication of Schottky diodes. It was also difficult to detect oxygen by FT-IR because of large free carrier absorption. So, we tried to make diodes by decreasing carrier concentration due to the hydrogen passivation of boron. At the same time, it was considered possible to detect oxygen by FT-IR due to the decrease of free carrier absorption. The efficient method to introduce hydrogen was the exposure of samples to hydrogen plasma at 300℃. Diodes were successfully fabricated by evaporating Sm on top of hydrogenated surfaces. Then, the carrier concentration decreased from 〜5x10ィイD118ィエD1 cmィイD1-3ィエD1 to 〜10ィイD117ィエD1 cmィイD1-3ィエD1 in the near-surface region. As an alternative method, silicon wafers were boiled in water to introduce hydrogen more conveniently. The near-surface carrier concentration of 〜10ィイD117ィエD1 cmィイD1-3ィエD1 was obtained by consecutive eight processes of boiling and removal of oxide layer. The fabrication of diodes on hydrogenated surfaces of pィイD1+ィエD1 wafers made it possible to estimate defects by DLTS. On the other hand, the hydrogen atoms might deactivate defects in addition to boron acceptors. It is necessary to investigate the interaction between hydrogen atoms and defects. The study showed that hydrogen atoms not only deactivate some defects but also activate some inactive defects. Thus, some results were obtained for electrical characterization, but detection of oxygen in pィイD1+ィエD1 wafers by FT-IR was unattainable. For such purpose, more decrease of the carrier concentration than 〜10ィイD117ィエD1 cmィイD1-3ィエD1 is needed. We must pursue the introduction technique of the larger quantity of hydrogen into pィイD1+ィエD1 wafers.

本研究的目的是评估重硼p γ γ γ γ + γ γ γ γ γ CZ硅片中的电活性缺陷和测量氧的含量。由于肖特基二极管的制造困难，未能对p - D1+ p - D1晶圆进行有效的缺陷表征方法DLTS。由于游离载流子吸收大，用FT-IR检测氧也很困难。因此，我们试图通过降低载流子浓度来制造二极管，因为硼的氢钝化。同时，由于自由载流子吸收的减少，认为用FT-IR检测氧是可能的。引入氢的有效方法是将样品暴露在300℃的氢等离子体中。通过在氢化表面上蒸发Sm，成功地制备了二极管。在近地表区域，载流子浓度从~ 5 × 10 μ μ l - 118 μ l - D1 cm μ l - D1降至~ 10 μ l - 117 μ l - D1 cm μ l - D1-3 μ l - D1。作为一种替代方法，硅片在水中煮沸，以更方便地引入氢。通过连续8道沸煮和去除氧化层的工艺，得到了~ 10 μ c μ c D117 μ c μ c D1 ~ 1 ~ 3 μ c μ c D1的近表面载体浓度。在p - D1+ p - D1晶圆的氢化表面上制备二极管，使得利用DLTS技术对缺陷进行估计成为可能。另一方面，除了硼受体外，氢原子也可能使缺陷失活。有必要研究氢原子与缺陷之间的相互作用。研究表明，氢原子不仅使一些缺陷失活，而且使一些非活性缺陷活化。因此，获得了一些电表征结果，但无法通过FT-IR检测p γ γ γ + γ γ γ γ硅片中的氧。为此，需要将载流子浓度降低到~ 10 μ μ c ~ 1 ~ 3 μ μ c ~ 1 μ c ~ 1 μ c ~ 1 μ c ~ 1 μ c ~ 1 μ c。我们必须追求将更大量的氢引入到p γ γ γ + γ γ γ γ硅片中的技术。