课题基金 / 基金详情

Study of Direct Observation of Electron Wave Phenomena in Solid State by Scanning Hot Electron Microscopy

Study of Direct Observation of Electron Wave Phenomena in Solid State by Scanning Hot Electron Microscopy
扫描热电子显微镜直接观察固态电子波现象的研究
批准号:
11355013
负责人:
FURUYA Kazuhito
金额:
$11.26万
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (A).
财政年份:
1999
资助国家:
日本
项目状态:
已结题
起止时间:
1999 至 2000

项目摘要

项目成果

FURUYA Kazuhito的其他基金

相关文献

中文摘要
翻译
点击翻译按钮获取中文摘要
英文摘要
Scanning hot electron microscopy(SHEM) for the observation of the electron wave diffraction has been studied. Before this study, hot electrons of relatively high energy (3 to 4eV) from insulator/metal emitters were already detected. Our final target is to observe the hot electron of low energy(30 to 300meV) from the semiconductor emitter. Thus, the establishment of SHEM technique, the realization of the semiconductor emitter, and the detection of the hot electron of relative high energy(3eV) in semiconductor, were set as targets of this study. The reason for the choice of 3eV rather than 300meV is to avoid the necessity of the low work function metal on the sample surface. As results, (1)The comprehensive understanding of SHEM was achieved. Using the sphere/plane model, the jelium-model- and the image- force-potentials, the hot and the thermal-equilibrium electron currents flown through the probe, and their ratio were revealed in relation with parameters. (2)Parasitic effects including … More of the capacitive coupling current, the residual series resistance induced current, the phase-shift and response suppression induced by the gap control system, have been made clear to be eliminated. (3)AlAs/GaInAs hot electron emitters were designed and fabricated. The hot electron emission at 3eV was achieved. (4)Using the emitter and eliminating of parasitic effects, detection experiments of the hot electron from the semiconductor emitter have been executed. Measured data have been investigated comprehensively by comparing with the theory not to indicate the hot electron detection. We concluded that the 3eV hot electron could not be transported over 100nm in the semiconductor at the efficiency enough high for the probe detection. Summarizing the above, we have established SHEM technique and the hot electron generation by the semiconductor emitter. Based on these, we have convinced that we should proceed to the final stage where the object is the low energy hot electron. A breakthrough idea for imaging has been got to avoid the use of the low work function metal. Less
期刊论文(89)
专著(0)
科研奖励(0)
会议论文
Y.Miyamoto: "Anomalous Current in 50 nm width Au/Cr/GaInAs Electrode for electron wave interference device"3^<rd> International Symposium on Control of Semiconductor Interface. A5-6. (1999)
Y.Miyamoto:“用于电子波干涉装置的50 nm宽度Au/Cr/GaInAs电极中的异常电流”3^<rd>半导体接口控制国际研讨会。
DOI: --
发表时间:
期刊:
影响因子: --
作者: []
通讯作者:
Y.Miyamoto: "Fabrication and transport properties of 50-nm-wide Au/Cr/GaInAs electrode for electron wave interference device"Applied Surface Science. 150-160・1-4. 179-185 (2000)
Y.Miyamoto:“电子波干涉装置用50nm宽Au/Cr/GaInAs电极的制造和传输特性”应用表面科学150-160・1-4(2000)。
DOI: --
发表时间:
期刊:
影响因子: --
作者: []
通讯作者:
L.E.Wernersson: "Lateral confinement in a resonant tunneling transistor with a buried metallic gate"Applied Physics Letters. 74・2. 311-313 (1999)
L.E.Wernersson:“具有掩埋金属栅极的谐振隧道晶体管的横向限制”应用物理快报 74・2(1999)。
DOI: --
发表时间:
期刊:
影响因子: --
作者: []
通讯作者:
T.Arai: "Toward nano-metal buried in InP structure-20 nm wide tungsten wire and InP buried growth of tungsten-"The 9^<th> International Conference on Modulated Semiconductor Structures(MSS9). D21. (1999)
T.Arai:“迈向 InP 结构埋入纳米金属——20 nm 宽钨丝和 InP 埋入钨生长——”第 9 届国际调制半导体结构会议(MSS9)。
DOI: --
发表时间:
期刊:
影响因子: --
作者: []
通讯作者:
89
    Observation of Electron-Wave Diffraction with Scanning Probe based on Reciprocity Principle
    • 批准号:
      15360184
    • 项目类别:
      Grant-in-Aid for Scientific Research (B)
    • 资助金额:
      $8.83万
    • 财政年份:
      2003
    • 负责人:
      FURUYA Kazuhito
    • 依托单位:
    Quantum Interference Devices Controlled by Metals Buried in Semiconductors
    • 批准号:
      11694136
    • 项目类别:
      Grant-in-Aid for Scientific Research (B)
    • 资助金额:
      $3.33万
    • 财政年份:
      1999
    • 负责人:
      FURUYA Kazuhito
    • 依托单位:
    Electron Wave Interference in Semiconductor Biprism of Tungsten Wire for Lateral Coherence Estimation
    • 批准号:
      10305024
    • 项目类别:
      Grant-in-Aid for Scientific Research (A).
    • 资助金额:
      $16.58万
    • 财政年份:
      1998
    • 负责人:
      FURUYA Kazuhito
    • 依托单位:
    New STM technique for observation of ballistic electrons in semiconductors
    • 批准号:
      08405023
    • 项目类别:
      Grant-in-Aid for Scientific Research (A)
    • 资助金额:
      $16.26万
    • 财政年份:
      1996
    • 负责人:
      FURUYA Kazuhito
    • 依托单位: