Study of Direct Observation of Electron Wave Phenomena in Solid State by Scanning Hot Electron Microscopy

研究了用扫描热电子显微镜(SHEM)观察电子波衍射的方法。在这项研究之前，已经探测到来自绝缘体/金属发射体的相对高能(3到4 eV)的热电子。我们的最终目标是观察来自半导体发射器的低能(30到300 meV)的热电子。因此，本论文将SHEM技术的建立、半导体发射极的实现以及半导体中相对高能(3 EV)热电子的探测作为研究的目标。之所以选择3 eV而不是300 meV，是为了避免样品表面必须有低功函数的金属。结果表明：(1)对闪有了全面的认识。利用球/平面模型、吉利模型势和像力势，揭示了流过探针的热电子流和热平衡电子流及其比值与参数的关系。(2)寄生效应，包括…更多的电容耦合电流、残余串联电阻感应电流、间隙控制系统引起的相移和响应抑制已被明确消除。(3)设计并制作了AlAs/GaInAs热电子发射体。获得了3 eV的热电子发射。(4)利用发射体和消除寄生效应，进行了半导体发射体超热电子的探测实验。对测量数据进行了综合考察，并与理论进行了比较，认为不存在超热电子探测。我们得出的结论是，3 eV的超热电子不可能以足够高的探测效率在半导体中传输超过100 nm。综上所述，我们建立了SHEM技术和半导体发射极产生热电子的方法。在此基础上，我们确信我们应该进入最后一个阶段，在这个阶段中，物体是低能超热电子。为了避免使用低功函数金属，获得了成像的突破性想法。较少

Scanning hot electron microscopy(SHEM) for the observation of the electron wave diffraction has been studied. Before this study, hot electrons of relatively high energy (3 to 4eV) from insulator/metal emitters were already detected. Our final target is to observe the hot electron of low energy(30 to 300meV) from the semiconductor emitter. Thus, the establishment of SHEM technique, the realization of the semiconductor emitter, and the detection of the hot electron of relative high energy(3eV) in semiconductor, were set as targets of this study. The reason for the choice of 3eV rather than 300meV is to avoid the necessity of the low work function metal on the sample surface. As results, (1)The comprehensive understanding of SHEM was achieved. Using the sphere/plane model, the jelium-model- and the image- force-potentials, the hot and the thermal-equilibrium electron currents flown through the probe, and their ratio were revealed in relation with parameters. (2)Parasitic effects including … More of the capacitive coupling current, the residual series resistance induced current, the phase-shift and response suppression induced by the gap control system, have been made clear to be eliminated. (3)AlAs/GaInAs hot electron emitters were designed and fabricated. The hot electron emission at 3eV was achieved. (4)Using the emitter and eliminating of parasitic effects, detection experiments of the hot electron from the semiconductor emitter have been executed. Measured data have been investigated comprehensively by comparing with the theory not to indicate the hot electron detection. We concluded that the 3eV hot electron could not be transported over 100nm in the semiconductor at the efficiency enough high for the probe detection. Summarizing the above, we have established SHEM technique and the hot electron generation by the semiconductor emitter. Based on these, we have convinced that we should proceed to the final stage where the object is the low energy hot electron. A breakthrough idea for imaging has been got to avoid the use of the low work function metal. Less