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Study of Direct Observation of Electron Wave Phenomena in Solid State by Scanning Hot Electron Microscopy

扫描热电子显微镜直接观察固态电子波现象的研究

基本信息

批准号：
11355013
负责人：
FURUYA Kazuhito
金额：
$ 11.26万
依托单位：
TOKYO INSTITUTE OF TECHNOLOGY
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (A).
财政年份：
1999
资助国家：
日本
起止时间：
1999 至 2000
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-11355013/
关键词：
Hot Electron Detection Scanning Hot Electron Microscope Noise Characteristics of Tunneling Current Spatial Distribution of Tunnel Transmission Hot Electron Emitter AlAs GaInAs Heterostructure Ballistic Electron Transport Energy Relaxation

项目摘要

Scanning hot electron microscopy(SHEM) for the observation of the electron wave diffraction has been studied. Before this study, hot electrons of relatively high energy (3 to 4eV) from insulator/metal emitters were already detected. Our final target is to observe the hot electron of low energy(30 to 300meV) from the semiconductor emitter. Thus, the establishment of SHEM technique, the realization of the semiconductor emitter, and the detection of the hot electron of relative high energy(3eV) in semiconductor, were set as targets of this study. The reason for the choice of 3eV rather than 300meV is to avoid the necessity of the low work function metal on the sample surface. As results, (1)The comprehensive understanding of SHEM was achieved. Using the sphere/plane model, the jelium-model- and the image- force-potentials, the hot and the thermal-equilibrium electron currents flown through the probe, and their ratio were revealed in relation with parameters. (2)Parasitic effects including … More of the capacitive coupling current, the residual series resistance induced current, the phase-shift and response suppression induced by the gap control system, have been made clear to be eliminated. (3)AlAs/GaInAs hot electron emitters were designed and fabricated. The hot electron emission at 3eV was achieved. (4)Using the emitter and eliminating of parasitic effects, detection experiments of the hot electron from the semiconductor emitter have been executed. Measured data have been investigated comprehensively by comparing with the theory not to indicate the hot electron detection. We concluded that the 3eV hot electron could not be transported over 100nm in the semiconductor at the efficiency enough high for the probe detection. Summarizing the above, we have established SHEM technique and the hot electron generation by the semiconductor emitter. Based on these, we have convinced that we should proceed to the final stage where the object is the low energy hot electron. A breakthrough idea for imaging has been got to avoid the use of the low work function metal. Less

研究了用扫描热电子显微镜（sem）观察电子波衍射的方法。在此研究之前，已经检测到来自绝缘体/金属发射体的相对高能量（3至4eV）的热电子。我们的最终目标是观察来自半导体发射极的低能量（30 ~ 300meV）热电子。因此，建立SHEM技术，实现半导体发射体，探测半导体中相对高能（3eV）的热电子是本研究的目标。选择3eV而不是300meV的原因是为了避免样品表面低功功能金属的必要性。结果表明：(1)实现了对SHEM的全面认识。利用球/平面模型、凝胶模型和像力势，揭示了通过探针的热平衡电流和热平衡电流及其比值与参数的关系。(2)明确了由间隙控制系统引起的容性耦合电流、剩余串联电阻感应电流、相移和响应抑制等寄生效应的消除。(3)设计并制作了AlAs/GaInAs热电子发射体。实现了3eV的热电子发射。(4)利用该发射极并消除寄生效应，进行了半导体发射极热电子的探测实验。对实测数据进行了全面的研究，并与理论进行了比较，以表明热电子探测。我们的结论是，3eV热电子不能以足够高的效率在半导体中传输到100nm以上，以进行探针检测。综上所述，我们建立了基于半导体发射极产生热电子的闪蒸技术。基于这些，我们确信我们应该进入最后一个阶段，在这个阶段，目标是低能热电子。为避免低功功能金属的使用，在成像技术上取得了突破性的进展。少