Study on Vapor Phase Synthesis and Sintering of Ultrafine Silicon Nitride Composite Particles
Study on Vapor Phase Synthesis and Sintering of Ultrafine Silicon Nitride Composite Particles
批准号:
63550585
负责人:
HOJO Junichi
金额:
$1.34万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for General Scientific Research (C)
财政年份:
1988
资助国家:
日本
项目状态:
已结题
起止时间:
1988 至 1989
中文摘要
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英文摘要
1. Preparation and sintering of Si_3N_4-SiC composite powder (1) Amorphous Si_3N_4-SiC composite powder with an average particle size of 0.02-0.1mum was produced by the vapor phase reaction of Si(CH_3)_4-NH_3 system (1200゚C), or by the plasma gas phase reaction of Si(CH_3)Cl_3-NH_3 system. The structure of composite particles was classified into three types: SiC-coated Si_3N_4, Si_3N_4-coated SiC and mixture of Si_3N_4 and SiC phases. (2) alpha-Si_3N_4 and beta-SiC were crystallized by heat treatment of amorphous composite powder. At 1600゚C, the heated powder consisted of coarse Si_3N_4 particles with a size above 3mum and fine SiC particles with a size of about 0.2mum. Hot-pressing of composite powder containing Y_2O_3-Al_2O_3 sintering aid at 1700゚C gave a dense sintered body with a relative density above 90%. The crystal phases of sintered body were beta-Si_3N_4 and beta-SiC. The grain size was small as about 0.2mum. The inclusion of SiC suppressed the grain growth of Si_3N_4. SiC content was decreased owing to the reaction with oxides.2. Preparation and sintering of Si_3N_4-BN composite powder Amorphous Si_3N_4-BN composite powder with an average particle size of 0.06-0.1mum was produced by the vapor phase reaction of SiCl_4-BCl_3-NH_3 system (1400゚C). The type of composite structure seemed to be a mixture of Si_3N_4 and BN phases. No crystallization was observed in the heat treatment at 1550゚C. When composite powder containing sintering aid was hot-pressed at 1700゚C, alpha,beta-Si_3N_4 was crystallized but h-BN was little crystallized. The density of sintered body was very low. As described above, the preparation method of composite powder was established and the sintering behavior was elucidated. The sintering technique should be established next to realize high-strength and high-toughness composite materials.
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北條純一: "Si_3N_4-BN複合粉体の気相合成と焼結" セラミックス論文誌.
Junichi Hojo:“Si_3N_4-BN复合粉末的气相合成与烧结”陶瓷杂志。
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北條純一: "気相反応法によるSiC-Si_3N_4系複合粉体の合成" 窒業協会誌. 95. 45-49 (1987)
Junichi Hojo:“气相反应法合成SiC-Si_3N_4复合粉末”氮工业协会学报95. 45-49(1987)。
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北条純一: 窯業協会誌. 95. 45-49 (1987)
北条纯一:陶瓷协会杂志。95. 45-49 (1987)
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Junichi Hojo, Masahiko Nakamine, Akio Kato: "Preparation of SiC-Si_3N_4 Composite Particles by Plasma Gas Phase Reaction" Ceramic Transactions Vol.1: Ceramic Powder Science II (The American Ceramic Society), 277-284, 1988.
Junichi Hojo、Masahiko Nakamine、Akio Kato:“通过等离子体气相反应制备 SiC-Si_3N_4 复合颗粒”《陶瓷汇刊》第 1 卷:陶瓷粉末科学 II(美国陶瓷学会),277-284,1988。
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Junichi Hojo.: Ceramic Transactions Vol.1:Ceramic Powder Science (Proceedings of the First International Conference on Ceramic Powder Processing Science). 1. 277-284 (1988)
Junichi Hojo.:《陶瓷汇刊》第 1 卷:陶瓷粉末科学(第一届陶瓷粉末加工科学国际会议论文集)。
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共 10 条
Principle Design of Chrome-Free Refractory with High Corrosion Resistance
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批准号:20613011
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项目类别:Grant-in-Aid for Scientific Research (C)
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财政年份:2008
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Control of Nano-Phase Separated Structure in Fine Amorphou Composite Partucles
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Development of High-Temperature Electronic Device by Microstructure Control of Composite Ceramics of Silicon Carbide
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批准号:07650788
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项目类别:Grant-in-Aid for Scientific Research (C)
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资助金额:$1.34万
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财政年份:1995
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负责人:HOJO Junichi
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依托单位:
Structural Control of Multiphase Silicon Carbide Ceramics with Composite Particles
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批准号:05650657
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项目类别:Grant-in-Aid for General Scientific Research (C)
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资助金额:$1.34万
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财政年份:1993
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负责人:HOJO Junichi
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依托单位:
海外基金