权益分类	功能权益	普通用户	{{item.name}}会员
{{category.name}}	{{benefitItem.name}}

Study on Vapor Phase Synthesis and Sintering of Ultrafine Silicon Nitride Composite Particles

超细氮化硅复合颗粒的气相合成及烧结研究

基本信息

批准号：
63550585
负责人：
HOJO Junichi
金额：
$ 1.34万
依托单位：
Kyushu University
依托单位国家：
日本
项目类别：
Grant-in-Aid for General Scientific Research (C)
财政年份：
1988
资助国家：
日本
起止时间：
1988 至 1989
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-63550585/
关键词：
Silicon Nitride Silicon Carbide Boron Nitride Composite Particle Vapor Phase Reaction Method Ceramic Composite

项目摘要

1. Preparation and sintering of Si_3N_4-SiC composite powder (1) Amorphous Si_3N_4-SiC composite powder with an average particle size of 0.02-0.1mum was produced by the vapor phase reaction of Si(CH_3)_4-NH_3 system (1200ﾟC), or by the plasma gas phase reaction of Si(CH_3)Cl_3-NH_3 system. The structure of composite particles was classified into three types: SiC-coated Si_3N_4, Si_3N_4-coated SiC and mixture of Si_3N_4 and SiC phases. (2) alpha-Si_3N_4 and beta-SiC were crystallized by heat treatment of amorphous composite powder. At 1600ﾟC, the heated powder consisted of coarse Si_3N_4 particles with a size above 3mum and fine SiC particles with a size of about 0.2mum. Hot-pressing of composite powder containing Y_2O_3-Al_2O_3 sintering aid at 1700ﾟC gave a dense sintered body with a relative density above 90%. The crystal phases of sintered body were beta-Si_3N_4 and beta-SiC. The grain size was small as about 0.2mum. The inclusion of SiC suppressed the grain growth of Si_3N_4. SiC content was decreased owing to the reaction with oxides.2. Preparation and sintering of Si_3N_4-BN composite powder Amorphous Si_3N_4-BN composite powder with an average particle size of 0.06-0.1mum was produced by the vapor phase reaction of SiCl_4-BCl_3-NH_3 system (1400ﾟC). The type of composite structure seemed to be a mixture of Si_3N_4 and BN phases. No crystallization was observed in the heat treatment at 1550ﾟC. When composite powder containing sintering aid was hot-pressed at 1700ﾟC, alpha,beta-Si_3N_4 was crystallized but h-BN was little crystallized. The density of sintered body was very low. As described above, the preparation method of composite powder was established and the sintering behavior was elucidated. The sintering technique should be established next to realize high-strength and high-toughness composite materials.

(1)Si(CH_3)_4-NH_3体系(1200ﾟC)的气相反应或Si(CH_3)Cl_3-NH_3体系的等离子体气相反应制备了平均粒径为0.02-0.1um的非晶态Si_3N_4-SiC复合粉末。复合粒子的结构可分为三种类型：SiC包覆Si3N4、Si3N4包覆碳化硅和Si3N4与碳化硅的混合物。(2)对非晶态复合粉末进行热处理，使α-Si_3N_4和β-碳化硅晶化。在1600ﾟC下，加热后的粉末由尺寸大于3um的粗大Si3N4颗粒和尺寸约为0.2um的细小碳化硅颗粒组成。添加Y_2O_3-Al_2O_3助烧剂的复合粉末在1700ﾟC热压可得到致密的烧结体，其相对密度在90%以上。烧结体的晶相为β-Si3N4和β-碳化硅。颗粒尺寸较小，约为0.2微米。结果表明：1.碳化硅的加入抑制了氮化硅的晶粒长大，碳化硅与氧化物反应降低了碳化硅含量。采用SiCl4-BCl3-NH3体系(1400ﾟC)的气相反应制备了Si3N4-BN非晶态复合粉末，其平均粒度为0.06-0.1um。复合结构的类型似乎是Si3N4和BN相的混合。在1550ﾟC热处理过程中未观察到晶化现象。当含有助烧剂的复合粉末在1700ﾟC热压时，α，β-Si3N4有晶化，而h-BN几乎没有晶化。烧结体的密度很低。在此基础上，建立了复合粉末的制备方法，阐明了复合粉末的烧结行为。实现高强高韧复合材料的下一步应建立烧结工艺。