Interconnection of Functional Materials by Means of a Surface Activation Method in Ultrahigh Vacuum

该项目的目标将被授予'通过表面激活方法在超高真空中建立互连技术的可操作材料'。由表面激活室温度键合技术制成的粘结实验在超高真空中（UHV.）10^<-9>Pa）Max-Plank研究所的绑定设备和在普通高真空（HV， 10^<-5>Pa）东京大学的设备。接口之间的微观结构、机械性能和电气性能的关系是明确的。传输电子显微镜显示了在高压高压下准备的Al/Al接口的微观结构的存在受到常驻气体的影响，如H_2O。一个大约10纳米厚度的中间淀粉层形成在界面上。层对交互微结构的影响的存在。关节的张力强度，大小，大于100兆帕，而接口的电抵抗力低于10^<-12>OMEGA·cm^2. Al/Al接头在一个超高压清洁大气层中准备好了直接绑定的表面在原子尺度上得到了补偿时，表面被氧气束在高压下的喷射激活，连接的张力强度小于由argon光束发射激活的强度的一半。在HV分解中准备的Al/Si_3N_4连接的张力强度为离子发射，时间增加。降解的原因是，脆弱的橡胶在Si_3N_4表面形成的。However，在Al/SiC系统的情况下，连接的张力强度增加，然后随着离子分离时间增加而饱和。在添加到使用分子动力学方法的模拟房间温度绑定过程的那些实验研究中，还添加了一些计算程序的实验研究。

The aim of the project shall be giving an assured status to 'making interconnection technique of functional materials by the surface activation method in an ultrahigh vacuum'. Bonding experiments by the surface activation room temperature bonding technique were made both in an ultrahigh vacuum (UHV. 10^<-9>Pa) bonding apparatus of Max-Plank Institute and in a regular high vacuum (HV, 10^<-5>Pa) apparatus of the University of Tokyo. The relationship among microstructures, mechanical properties and electrical properties of the interface was clarified.Transmission electron microscopy showed that the microstructure of Al/Al interfaces prepared in HV was affected by the presence of residual gas such as H_2O. An intermediate amorphas layer of about 10nm thickness was formed at the interfaces. The presence of the layer affects the interfacial microstructure. The tensile strength of the joint, however, is more than 100MPa and the interface electrical resistivity is as low as less than 10^<-12>OMEGA・cm^2.Al/Al joints prepared in a UHV clean atmosphere have direct bonding interfaces whose surfaces are adhered in the atomic scale.When surfaces are activated by an oxygen beam sputtering in HV, the tensile strength of the joints is less by half than the strength of those activated by argon beam sputtering.The tensile strength of Al/Si_3N_4 joints prepared in HV decreases as the ion sputtering, time increases. The reason of the decrease is that the fragile laver is formed at the surface of Si_3N_4 by the ion sputtering. However, in case of Al/SiC system the tensile strength of the joints is increasing and then saturated as the ion sputtering time increases.In addition to those experimental studies a calculation program using a molecular dynamic method was also developed for the simulation of the room temperature bonding process.