Interconnection of Functional Materials by Means of a Surface Activation Method in Ultrahigh Vacuum

超高真空表面活化方法实现功能材料互连

• 批准号: 02044039
• 负责人: SUGA Tadatomo
• 金额: $ 3.14万
• 依托单位: University of Tokyo
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for international Scientific Research
• 财政年份: 1990
• 资助国家: 日本
• 起止时间: 1990 至 1991
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-02044039/
• 关键词: Room Temperature Bonding; Ultrahigh Vacuum; Surface Activation; Microstructure of Interface; Direct Bonding; 高分解能電子顕微鏡; 常温接合; セラミックス; イオン衝撃; 高分解能電子顕微鏡観察

The aim of the project shall be giving an assured status to 'making interconnection technique of functional materials by the surface activation method in an ultrahigh vacuum'. Bonding experiments by the surface activation room temperature bonding technique were made both in an ultrahigh vacuum (UHV. 10^<-9>Pa) bonding apparatus of Max-Plank Institute and in a regular high vacuum (HV, 10^<-5>Pa) apparatus of the University of Tokyo. The relationship among microstructures, mechanical properties and electrical properties of the interface was clarified.Transmission electron microscopy showed that the microstructure of Al/Al interfaces prepared in HV was affected by the presence of residual gas such as H_2O. An intermediate amorphas layer of about 10nm thickness was formed at the interfaces. The presence of the layer affects the interfacial microstructure. The tensile strength of the joint, however, is more than 100MPa and the interface electrical resistivity is as low as less than 10^<-12>OMEGA・cm^2.Al/Al joints prepared in a UHV clean atmosphere have direct bonding interfaces whose surfaces are adhered in the atomic scale.When surfaces are activated by an oxygen beam sputtering in HV, the tensile strength of the joints is less by half than the strength of those activated by argon beam sputtering.The tensile strength of Al/Si_3N_4 joints prepared in HV decreases as the ion sputtering, time increases. The reason of the decrease is that the fragile laver is formed at the surface of Si_3N_4 by the ion sputtering. However, in case of Al/SiC system the tensile strength of the joints is increasing and then saturated as the ion sputtering time increases.In addition to those experimental studies a calculation program using a molecular dynamic method was also developed for the simulation of the room temperature bonding process.

本项目的目标是为“真空中表面活化法制造功能材料互连技术”提供一个确定的地位。采用表面活化室温键合技术，在超高真空（UHV）和真空度下进行了键合实验。在<-9>Max-Plank Institute的常规高真空（HV，10 μ Pa）接合装置和东京大学的常规高真空（HV，10 μ <-5>Pa）装置中进行。透射电镜观察表明，H_2O等残余气体的存在影响了Al/Al界面的微观结构。在界面处形成约10 nm厚的中间非晶层。该层的存在影响界面微观结构。在<-12>超高真空清洁气氛中制备的Al/Al接头具有原子级的直接结合界面，在高压下用氧束溅射表面活化时，接头的抗拉强度比氩束溅射活化的接头的抗拉强度低一半，而在高压下制备的Al/Si_3N_4接头的抗拉强度随着离子溅射时间的增加而降低。其原因是离子溅射在Si_3N_4表面形成了脆性层。而Al/SiC系统的接头抗拉强度则随着溅射时间的增加而增加，然后趋于饱和。除了这些实验研究外，还开发了一个用分子动力学方法模拟室温键合过程的计算程序。

项目成果

T.SUGA,Y.TAKAHASHI,H.TAKAGI,B.GIBBESCH,G.ELSSNER: "STRUCTURE OF Al-Al AND Al-Si_3N_4 INTERFACES BONDED AT ROOM TEMPERATURE BY MEANS OF THE SURFACE ACTIVATION METHOD" Acta Met.(1992)

T.SUGA,Y.TAKAHASHI,H.TAKAGI,B.GIBBESCH,G.ELSSNER：“通过表面活化方法在室温下键合的 Al-Al 和 Al-Si_3N_4 界面的结构”Acta Met.(1992)

須賀 唯知,高橋 裕,高木 秀樹,石田 洋一,G.Elssner,B.Gibbesch,板東 義雄: "「常温超高真空中で作製したAl/Al接合界面の透過電子顕微鏡観察」" 日本金属学会誌. 54. 741-742 (1990)

Yuichi Suga、Yutaka Takahashi、Hideki Takagi、Yoichi Ishida、G. Elssner、B. Gibbesch、Yoshio Bando：“‘室温下超高真空中制造的 Al/Al 键界面的透射电子显微镜观察’” 日本杂志金属研究所。54。741-742（1990）

T.SUGA,Y.TAKAHASHI,H.TAKAGI,B.GIBBESCH,G.ELSSNER: "「STRUCTURE OF Al-Al AND Al-Si_3N_4 INTERFACES BONDED AT ROOM TEMPERATURE BY MEANS OF THE SURFACE ACTIVATION METHOD」" Acta Met.(1992)

T.SUGA,Y.TAKAHASHI,H.TAKAGI,B.GIBBESCH,G.ELSSner：“通过表面活化方法在室温下键合的 Al-Al 和 Al-Si_3N_4 界面的结构”Acta Met.(1992)

高橋 裕,須賀 唯知: "「蒸着法によるYBa_2Cu_3O_<7ーx>超伝導体/金属の低抵抗接続」" 日本セラミックス協会学術論文誌. 印刷中.

Yutaka Takahashi、Yuichi Suga：“‘通过气相沉积法实现 YBa_2Cu_3O_<7-x> 超导体/金属的低电阻连接’”日本陶瓷学会杂志正在出版。

高木 秀樹,高橋 裕,須賀 唯知,板東 義雄: "「Al/SiおよびSi_3N_4常温接合界面の高分解能電子顕微鏡観察」" 日本金属学会誌. 55. 907-908 (1991)

Hideki Takagi、Yutaka Takahashi、Yuichi Suga、Yoshio Bando：“Al/Si 和 Si_3N_4 室温键合界面的高分辨率电子显微镜观察”日本金属学会杂志 55. 907-908 (1991)。