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Study for low temperature bonding and itsapplication for piezo-electric materials.

压电材料低温键合及其应用研究。

基本信息

批准号：
05452289
负责人：
SUGA Tadatomo
金额：
$ 2.62万
依托单位：
The University of Tokyo
依托单位国家：
日本
项目类别：
Grant-in-Aid for General Scientific Research (B)
财政年份：
1993
资助国家：
日本
起止时间：
1993 至 1994
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-05452289/
关键词：
Piezo-electric materials Low temperature bonding Room temperature bonding Anodic bonding Silicon Ion bomberdment Radical beam Surface activation bonding 吸着層

项目摘要

The result of the study for low tempertaute bonding of piezo-electric materials are surmarized as follows1) In order to investigate the application of the room temperature bonding by means of surface activation method, the bonding for aluminum and silicon was examined. Surface activation process were carried out for Ar-atom beam bomberdment and hydrogen radical beam. For surface activation of hydrogen radical beam for silicon, carbon on silicon was cleaned up, but oxygen remanded. On the other hand, for Ar-atom beam bomberdment, carbon and oxygen on silicon were cleaned up complately. The bonded sample of silicon to aluminum have good bonding strength for Ar-atom beam bomberdment, but week for hydrogen radical beam.2) Bonding for piezo-electric materials and silicon will be performed by the two wafers. In order to investigate the possibility of wafer bonding by surface activation method, silicon to silicon bonding were examined. Ar-atom beam bomberdment was carried out for surface activation method. Aluminum coated silicon wafer was carried out for bonding. For increasing the bonded area, long bonding time and heavy load are needed.3) Anodic bonding are carried out for silicon wafer and PZT ceramics coated by Pyrex glass. Good condition for bonding is above 450ﾟC in temperature and 500V in voltage. Bonded interface has no void and no stress atomistically in observation ousing transmission electron microscopy. Migration of Na ion by applied voltage were observed.

1)为了探索表面活化法室温键合的应用，对铝和硅的键合进行了研究。对Ar原子束轰击和氢自由基束进行了表面活化处理。对于硅氢自由基束的表面活化，硅上的碳被清除，而氧被滞留。另一方面，对于Ar原子束轰击，硅上的碳和氧被综合清除。对于Ar原子束轰击，硅与铝的键合样品具有良好的键合强度，但对于氢自由基束，键合强度较弱。2)对于压电材料和硅的键合将由这两个晶片来完成。为了探讨表面活化法键合硅片的可能性，对硅片与硅片的键合进行了研究。表面活化法采用Ar原子束轰击。对镀铝硅片进行了键合。为了增加键合面积，需要较长的键合时间和较大的键合载荷。3)对镀膜的硅片和PZT陶瓷进行阳极键合。良好的键合条件为温度450ﾟC以上，电压500V。通过透射电子显微镜观察，结合界面原子上无空洞，无应力。观察了外加电压对Na离子迁移的影响。