Development of the 'Super-Dimpler' for preparation of a thin specimen for TEM observations of the machined surfaces.

开发“Super-Dimpler”,用于制备薄样品,用于加工表面的 TEM 观察。

基本信息

  • 批准号:
    02555017
  • 负责人:
  • 金额:
    $ 5.18万
  • 依托单位:
  • 依托单位国家:
    日本
  • 项目类别:
    Grant-in-Aid for Developmental Scientific Research (B)
  • 财政年份:
    1990
  • 资助国家:
    日本
  • 起止时间:
    1990 至 1991
  • 项目状态:
    已结题

项目摘要

In observation using, transmission electron microscope(TEM), we spent a lot of time to prepare thin film specimens, for they must be thin enourgh to be transmitted by electron beam and their surfaces need to be flat. Especially ceramics is usually chemically stable, so tfiat the ion-thinninc, method is used for making, its TEM specimens. However, this method has many problems, such as a damaging and rouaheriing at the surface by the ion beam attackin.In this research, we make on an experimental basis a auto-polishin, machine with submicron position control mechanism and establish a preparation technolooy of damage-free specimen for TEM observation only by mechanical thinninal thinning.First of all, surface damage, e morpholo, , y produced by some conventional thinning methods (ariseding, polishing with diamond abrasive, and polishing by a dimpler) are estimated usincr TEM. Both the ground surface and the dimpler polished surface has severe residual stress with a crack both in grains and grain boundaries. And the diamond polished surface has many scratches. Therefore these methods are not suitable for makinc, TEM specimens.Then, a 'Super Dimpler' using a new concept on basis of the strain-free mechanochemical polishincr is designed and developed. Its processing mechanism is followed ; A disk rotating, at above 10^4 rpm in a polishing solution is approached to a specimen with keeping them apart. Abrasive in solution flowing between the disk and the specimen at high speed polish the specimen surface.Polishing with alumina abrasive showed that removine, proceeded in the non-contact state. This means that the dimple pattem processing, using mechanochemical polishing, is available. For the future, we can prepare thin film specimens for TEM observations which have no surface damage at short processing, time.
在用透射电子显微镜进行观察时,我们花了大量的时间来制备薄膜样品,因为薄膜必须足够薄才能通过电子束传输,而且表面必须是平坦的。尤其是陶瓷通常具有化学稳定性,因此采用离子稀释法制作其透射电子显微镜样品。本研究在实验的基础上,研制了一台具有亚微米位置控制机构的自动抛光机,建立了一种仅用机械减薄的无损伤样品制备工艺。首先,对一些传统减薄方法(出现、用金刚石磨料抛光、用调光器抛光)产生的表面损伤进行了评估。磨削表面和调光抛光表面都存在严重的残余应力,晶界和晶界均有裂纹。而且钻石抛光表面有许多划痕。在此基础上,设计并开发了一种基于无应变机械力化学抛光新概念的“超级调光器”。遵循其加工机理;在抛光液中以高于10^4rpm的速度旋转的圆盘靠近样品并保持它们之间的分离。溶液中的磨料在圆盘和试件之间流动,高速抛光试件表面。用氧化铝磨料抛光表明,磨料是在非接触状态下进行的。这意味着使用机械力化学抛光的凹陷图案处理是可用的。在未来,我们可以在短时间内制备出表面无损伤的薄膜样品用于透射电子显微镜的观察。

项目成果

期刊论文数量(8)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
Y. Takahashi, M. Kikuchi, S. Suzuki, and T. Suga: "Transmission Electron Microscopy of Surface Damages Resulting from Wet Polishing in a polycrystalline Aluminium Nitride Substrate" Journal of the Ceramics Society of Japan. 99. 613-619 (1991)
Y. Takahashi、M. Kikuchi、S. Suzuki 和 T. Suga:“多晶氮化铝基板湿式抛光造成的表面损伤的透射电子显微镜”日本陶瓷学会杂志。
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M.Kikuchi,Y.Takahashi,T.Suga,S.Suzuki,and Y.Bando: "Mechanochemical Polishing of Silicon Carbide Single Crystal with Chromium (III) Oxide Abrasive" Journal of the American Ceramics Society. 75. 189-194 (1992)
M.Kikuchi、Y.Takahashi、T.Suga、S.Suzuki 和 Y.Bando:“用氧化铬 (III) 磨料对碳化硅单晶进行机械化学抛光”美国陶瓷学会杂志。
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M. kikuchi, Y. Takahashi, T. Suga, S. Suzuki, and Y. Bando: "Mechanochemical Polishing of Silicon Carbide Single Crystal with Chromium (III) Oxide Abrasive" Journal of the American Ceramics Society. 75. 189-194 (1992)
M. kikuchi、Y. Takahashi、T. Suga、S. Suzuki 和 Y. Bando:“用氧化铬 (III) 磨料对碳化硅单晶进行机械化学抛光”美国陶瓷学会杂志。
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    0
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M.Kikuchi,Y.takahashi,T.Suga,S.Suzuki,and Y.Bando: "Mechanochemical Polishing of Silicon Carbide Single Crystal with Chromium(III)Oxide Abrasive" Journal of the American Ceramics Society. 75. 189-194 (1992)
M.Kikuchi、Y.takahashi、T.Suga、S.Suzuki 和 Y.Bando:“用氧化铬 (III) 磨料对碳化硅单晶进行机械化学抛光”美国陶瓷学会杂志。
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    0
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M.Kikuchi,Y.Takahashi,S.Suzuki,T.Suga and Y.Bando: "Direct Evidence of Mechanochemical Polishing by Cr_2O_3 Abrasive in SiC Single Crystal" Journal of American Ceramics Society.
M.Kikuchi、Y.Takahashi、S.Suzuki、T.Suga 和 Y.Bando:“SiC 单晶中 Cr_2O_3 磨料机械化学抛光的直接证据”美国陶瓷学会杂志。
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SUGA Tadatomo其他文献

SUGA Tadatomo的其他文献

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{{ truncateString('SUGA Tadatomo', 18)}}的其他基金

New Method for Room Temperature Bonding at Ambient Gas
环境气体下室温键合的新方法
  • 批准号:
    23246125
  • 财政年份:
    2011
  • 资助金额:
    $ 5.18万
  • 项目类别:
    Grant-in-Aid for Scientific Research (A)
Wafer-scale MEMS Package by means of room temperature bonding
采用室温键合的晶圆级 MEMS 封装
  • 批准号:
    16201028
  • 财政年份:
    2004
  • 资助金额:
    $ 5.18万
  • 项目类别:
    Grant-in-Aid for Scientific Research (A)
reversible interconnection
可逆互连
  • 批准号:
    07455285
  • 财政年份:
    1995
  • 资助金额:
    $ 5.18万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
Atomic and Electronic Design ob Ceramic/Metal Interfaces
陶瓷/金属界面的原子和电子设计
  • 批准号:
    06044059
  • 财政年份:
    1994
  • 资助金额:
    $ 5.18万
  • 项目类别:
    Grant-in-Aid for international Scientific Research
Study for low temperature bonding and itsapplication for piezo-electric materials.
压电材料低温键合及其应用研究。
  • 批准号:
    05452289
  • 财政年份:
    1993
  • 资助金额:
    $ 5.18万
  • 项目类别:
    Grant-in-Aid for General Scientific Research (B)
A Novel Approach to Assembly and Interconnection for Micromachines.
微型机器组装和互连的新方法。
  • 批准号:
    05555020
  • 财政年份:
    1993
  • 资助金额:
    $ 5.18万
  • 项目类别:
    Grant-in-Aid for Developmental Scientific Research (B)
Interconnection of Functional Materials by Means of a Surface Activation Method in Ultrahigh Vacuum
超高真空表面活化方法实现功能材料互连
  • 批准号:
    02044039
  • 财政年份:
    1990
  • 资助金额:
    $ 5.18万
  • 项目类别:
    Grant-in-Aid for international Scientific Research
INTERCONNECTION OF FUNCTIONAL MATERIALS BY MEANS OF A SURFACE ACTIVATION METHOD IN ULTRAHIGH VACUUM
通过超高真空表面活化方法实现功能材料的互连
  • 批准号:
    01044040
  • 财政年份:
    1989
  • 资助金额:
    $ 5.18万
  • 项目类别:
    Grant-in-Aid for international Scientific Research
Ultra-high Vacuum Bonding at Room Temperature Aided by Ultrasonic Wave
超声波辅助的室温超高真空键合
  • 批准号:
    62460189
  • 财政年份:
    1987
  • 资助金额:
    $ 5.18万
  • 项目类别:
    Grant-in-Aid for General Scientific Research (B)

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