A Novel Approach to Assembly and Interconnection for Micromachines.

微型机器组装和互连的新方法。

• 批准号: 05555020
• 负责人: SUGA Tadatomo
• 金额: $ 3.65万
• 依托单位: The University of Tokyo
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Developmental Scientific Research (B)
• 财政年份: 1993
• 资助国家: 日本
• 起止时间: 1993 至 1994
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-05555020/
• 关键词: Micromachine; Assembly; Microbonding; Surface Activated Bonding; Micromanipulation; マニピュレータ; マイクロアセンブリ; 低温接合; 微小位置決め; 半導体チップ; はんだバンプ

Current fabrication technology for microelectronics or micromachines is based on the surface micromachining techniques for the basic processing steps of silicon-LSI technology. However, fabrication of real intelligent microsystems requires not only substantial progresses in the micromachining technology but also the ability to integrate and assemble the microcomponents to get a requisite three-dimensional structure. The main drawback of the conventional bonding methods is their rather high process temperatures which exclude the use of less heat-resisting components or preprocessed devices.In this study we obtained a newly developed microassembly apparatus, in which microcomponents can be positioned precisely and bonded to each other via the SAB method at room temperature. The microassembly apparatus consists of two UHV chambers, one of which is used for the feed-through of the specimens which are mounted on a disc and transferred into the assembly chamber. A specimen is then picked up … More from the disc by a manipulator and held at a desired position above the other specimen which is set on a multi-axial stage of twelve degrees of freedom of motion. The desired bonding positions may be derived the combining operations of the manipulator and the multi-axial stage. Briefly, the manipulator is driven by a SMA (shape memory alloy) spring and the multi-axial stage is operated by eleven stepping motors and three piezo-acturators.The positions of the specimens are monitored by a SEM (scanning electron microscope) which is operated also in UHV conditions. The surface of the specimens to be bonded are then sputter-cleaned by Ar fast atom beam (FAB) irradiation of about 1.5keV for several minutes. After native oxide film on metal surface or contaminated surface layr is removed, they are brought into contact under a slight pressure. Since the FAB source is pumped differentially, the whole processes are going on at an UHV lower than 10^<-7> Pa at this time.We investigated on the microbonding of Sn solder (phi340mum) and Al or Cu plates by means of the SAB method at room temperature. The bond strength of Sn solder to Al or Cu reached as high as 40MPa.These interface structures were investigated by transmission electron microscopy (TEM). At interface between Cu and Sn, there is inter-layr of about 5nm, which is Cu_6Sn_5 intermetallic compound. At interface between Al and Sn, Al and Sn atoms bonded directry without inter-layr and lattice distortion. Less

目前的微电子或微机械制造技术是基于表面微机械加工技术的硅-LSI技术的基本处理步骤。然而，制造真实的智能微系统不仅需要在微加工技术的实质性进展，但也有能力集成和组装的微组件，以获得所需的三维结构。传统的键合方法的主要缺点是其相当高的工艺温度，这排除了使用较少的耐热元件或预处理设备。在这项研究中，我们得到了一个新开发的微组装装置，在其中微元件可以精确定位，并通过SAB方法在室温下相互键合。微组装装置由两个UHV室组成，其中一个用于将安装在圆盘上的样品馈通并转移到组装室中。一个标本被拾起 ...更多信息 并保持在另一个样品上方的期望位置处，所述另一个样品设置在具有十二个运动自由度的多轴台上。期望的键合位置可以通过操纵器和多轴平台的组合操作来导出。简单地说，机械手由SMA（形状记忆合金）弹簧驱动，多轴工作台由11个步进电机和3个压电致动器驱动，样品的位置由SEM（扫描电子显微镜）监控，SEM也在超高真空条件下工作。然后，通过约1.5keV的Ar快原子束（FAB）照射几分钟，对待键合的样品的表面进行化学清洗。在金属表面的自然氧化膜或被污染的表面层被去除后，在轻微的压力下使它们接触。由于FAB源是差动抽运的，所以整个过程都是在低于10 μ Pa的超高真空下进行<-7>的。我们在室温下研究了Sn焊料（φ 340 μ m）与Al或Cu板的SAB微键合。Sn钎料与Al、Cu的结合强度高达40 MPa，用透射电镜（TEM）观察了界面结构。在Cu与Sn的界面处，存在一层约5 nm的中间层，为Cu_6Sn_5金属间化合物。在Al/Sn界面处，Al和Sn原子直接键合，没有层间效应和晶格畸变。少

项目成果

T.Suga,T.Fujiwaka and G.Sasaki: "Surface Activated Bonding and Its Application on Micro-Bonding at Room Temperature" Proc.9th European Hybrid Microelectronics Conference. 314-321 (1993)

T.Suga、T.Fujiwaka 和 G.Sasaki：“表面激活键合及其在室温微键合中的应用”Proc.9th 欧洲混合微电子会议。

須賀唯知: "マイクロアセンブリとマテリアルインターコネクション" '94青梅市フロンティアサイエンス会議. 81-91 (1994)

Yuichi Suga：“微装配和材料互连”94青梅市前沿科学会议81-91（1994）。

須賀唯知、佐々木元、細田直江: "Al-Snの常温接合" 第9回回路実装学術講演大会講演論文集. 87-88 (1995)

Yuichi Suga、Hajime Sasaki、Naoe Hosoda：“Al-Sn 的室温键合”第九届电路封装学术会议论文集 87-88 (1995)。

T.Suga, G.Sasaki and N.Hosoda: "Surface Activated Bonding of Sn and Al at Room Temperature" The 9th National Convention Record JIPC. 87-88 (1995)

T.Suga、G.Sasaki 和 N.Hosoda：“室温下锡和铝的表面活化键合”第九届全国大会记录 JIPC。

石井雄三、細田直江、須賀唯知: "マイクロアセンブリ装置の開発" 精密工学会学術講演会講演論文集. 529-530 (1995)

Yuzo Ishii、Naoe Hosoda、Yuichi Suga：“微装配设备的开发”精密工程学会学术会议记录 529-530（1995）。