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A Novel Approach to Assembly and Interconnection for Micromachines.

A Novel Approach to Assembly and Interconnection for Micromachines.
微型机器组装和互连的新方法。
批准号:
05555020
负责人:
SUGA Tadatomo
金额:
$3.65万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Developmental Scientific Research (B)
财政年份:
1993
资助国家:
日本
项目状态:
已结题
起止时间:
1993 至 1994

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中文摘要
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英文摘要
Current fabrication technology for microelectronics or micromachines is based on the surface micromachining techniques for the basic processing steps of silicon-LSI technology. However, fabrication of real intelligent microsystems requires not only substantial progresses in the micromachining technology but also the ability to integrate and assemble the microcomponents to get a requisite three-dimensional structure. The main drawback of the conventional bonding methods is their rather high process temperatures which exclude the use of less heat-resisting components or preprocessed devices.In this study we obtained a newly developed microassembly apparatus, in which microcomponents can be positioned precisely and bonded to each other via the SAB method at room temperature. The microassembly apparatus consists of two UHV chambers, one of which is used for the feed-through of the specimens which are mounted on a disc and transferred into the assembly chamber. A specimen is then picked up … More from the disc by a manipulator and held at a desired position above the other specimen which is set on a multi-axial stage of twelve degrees of freedom of motion. The desired bonding positions may be derived the combining operations of the manipulator and the multi-axial stage. Briefly, the manipulator is driven by a SMA (shape memory alloy) spring and the multi-axial stage is operated by eleven stepping motors and three piezo-acturators.The positions of the specimens are monitored by a SEM (scanning electron microscope) which is operated also in UHV conditions. The surface of the specimens to be bonded are then sputter-cleaned by Ar fast atom beam (FAB) irradiation of about 1.5keV for several minutes. After native oxide film on metal surface or contaminated surface layr is removed, they are brought into contact under a slight pressure. Since the FAB source is pumped differentially, the whole processes are going on at an UHV lower than 10^<-7> Pa at this time.We investigated on the microbonding of Sn solder (phi340mum) and Al or Cu plates by means of the SAB method at room temperature. The bond strength of Sn solder to Al or Cu reached as high as 40MPa.These interface structures were investigated by transmission electron microscopy (TEM). At interface between Cu and Sn, there is inter-layr of about 5nm, which is Cu_6Sn_5 intermetallic compound. At interface between Al and Sn, Al and Sn atoms bonded directry without inter-layr and lattice distortion. Less
期刊论文(31)
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会议论文
T.Suga,T.Fujiwaka and G.Sasaki: "Surface Activated Bonding and Its Application on Micro-Bonding at Room Temperature" Proc.9th European Hybrid Microelectronics Conference. 314-321 (1993)
T.Suga、T.Fujiwaka 和 G.Sasaki:“表面激活键合及其在室温微键合中的应用”Proc.9th 欧洲混合微电子会议。
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須賀唯知、佐々木元、細田直江: "Al-Snの常温接合" 第9回回路実装学術講演大会講演論文集. 87-88 (1995)
Yuichi Suga、Hajime Sasaki、Naoe Hosoda:“Al-Sn 的室温键合”第九届电路封装学术会议论文集 87-88 (1995)。
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T.Suga, G.Sasaki and N.Hosoda: "Surface Activated Bonding of Sn and Al at Room Temperature" The 9th National Convention Record JIPC. 87-88 (1995)
T.Suga、G.Sasaki 和 N.Hosoda:“室温下锡和铝的表面活化键合”第九届全国大会记录 JIPC。
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29
    New Method for Room Temperature Bonding at Ambient Gas
    • 批准号:
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    • 项目类别:
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    • 资助金额:
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    • 财政年份:
      2011
    • 负责人:
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    • 依托单位:
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    • 批准号:
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    • 项目类别:
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    • 资助金额:
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    • 财政年份:
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    • 批准号:
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    • 项目类别:
      Grant-in-Aid for Scientific Research (B)
    • 资助金额:
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    • 财政年份:
      1995
    • 负责人:
      SUGA Tadatomo
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    • 批准号:
      06044059
    • 项目类别:
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    • 资助金额:
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    • 财政年份:
      1994
    • 负责人:
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    • 依托单位:
    国内基金
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    晶态桥联聚倍半硅氧烷的自导向组装(self-directed assembly)及其发光性能
    • 批准号:
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    • 项目类别:
      面上项目
    • 资助金额:
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    • 批准年份:
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    • 负责人:
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    • 依托单位: