Atomic and Electronic Design ob Ceramic/Metal Interfaces

陶瓷/金属界面的原子和电子设计

• 批准号: 06044059
• 负责人: SUGA Tadatomo
• 金额: $ 2.37万
• 依托单位: University of Tokyo
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for international Scientific Research
• 财政年份: 1994
• 资助国家: 日本
• 起止时间: 1994 至 1996
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-06044059/
• 关键词: SiC-Al interface; first-principle molecular dynamics method; electronic structure; adhesive energy; electron microscopy; deformation; ceramic-metal interfaces; sapphire-Al interface; 原子間力顕微鏡; セラミックス; 界面; 原子構造; バンド計算; カーボンナノチューブ

Adhesive energies and atomic/electronic structure of metal to ceramic interfaces have been investigated by using the first principle molecular dynamics method based on the density-function theory. This investigation have been conducted through the tight collaboration between Prof.Ohuchi and Dr.Kohyama. The most important finding of the research was that in case of SiC (110) and SiC (100) and Al bonding, there is a strong attractive C-Al interactions with both ionic and covalent characters in the bonded interface, which are considered to play a favorable role in adhesion between SiC and Al. These theoretical results are confirmed by the bonding experiments conducted by Prof.Suga. By means of the surface activated bonding method, he has succeeded in bonding ceramic-metal system at room temperature. TEM study on the microstructure of the bonded interfaces, which has been continued since the last year, showed that a direct bonding of such ceramic-metal interface is formed actually only by contact between such clean surfaces. However, a closer observation of the bonded interface between Al2O3 and Al using the high resolution TEM showed that there is a strong distorted region of several nm thickness which possesses another structure which is different from both Al2O3 and Al. Formtion of such thin intermediate layr was interpreted as a result of strong deformation of the interfaces in contac that would lead to compensate the lattice mismatch. There results have been analyzed and complied for further development of interface engineering, and published in several international conferences. Also possibilities of these findings in application of the packaging technology in the near future has been discussed with fairly good expectations.

采用基于密度泛函理论的第一性原理分子动力学方法研究了金属-陶瓷界面的结合能和原子电子结构。这项研究是在Ohuchi教授和Kohyama博士的密切合作下进行的。研究发现，SiC（110）和SiC（100）与Al键合时，键合界面上存在着强的C-Al相互作用，这种相互作用具有离子和共价两种特征，对SiC与Al的结合起着有利的作用。采用表面活化连接方法，他成功地实现了陶瓷-金属系统的室温连接。从去年开始对结合界面的微观结构进行的TEM研究表明，这种陶瓷-金属界面的直接结合实际上仅通过这种清洁表面之间的接触形成。然而，用高分辨透射电镜观察Al_2 O_3与Al之间的结合界面发现，存在一个厚度为几nm的强畸变区，该畸变区具有不同于Al和Al的另一种结构，这种薄的中间层的形成被解释为界面在退火过程中强烈变形的结果，这将导致晶格失配的补偿。这些结果已被分析和汇编为接口工程的进一步发展，并发表在几个国际会议。还讨论了这些研究结果在不久的将来应用于包装技术的可能性，并提出了相当好的期望。

项目成果

L.Yang,N.Hosoda,T.Suga: "TEM Inverstigation of the SUS/Al Interface Created by the Surface Activated Bonding Method." 日本MRS1996年度学術シンポジウム. 151 (1996)

L. Yang、N. Hosoda、T. Suga：“通过表面活化粘合方法创建的 SUS/Al 界面的 TEM 研究。”日本 MRS 1996 学术研讨会 151 (1996)。

A.C.Rechards,M.R.Richards and F.S.Ohuchi: "A New,Versatile Coating Technique:Leviation Chemical Vapor Deposition" Surface Coating Engieering. (In Press). (1997)

A.C.Rechards、M.R.Richards 和 F.S.Ohuchi：“一种新型多功能涂层技术：悬浮化学气相沉积”表面涂层工程。

H.L.Bech,M.H.Lee,and F.S.Ohuchi: "Effect of ion bombardment on chemical interactions at SiC surface and Al/SiC interfaces" Materials Research Society Proceeding. In Press. (1997)

H.L.Bech、M.H.Lee 和 F.S.Ohuchi：“离子轰击对 SiC 表面和 Al/SiC 界面化学相互作用的影响”材料研究学会论文集。

T.Suga: "The Surface Activated Bonding for Materials Interconnection" 8th Japan Institute of Materials International Symposium "Interface Science and Materials Interconnection". 2a1-6 (1996)

T.Suga：“用于材料互连的表面活性键合”第八届日本材料研究所国际研讨会“界面科学与材料互连”。

H.L.Bech,M.H.Lee,and F.S.Ohuchi: "Effect of ion bombardment on chemical interactions at SiC surface and A1/SiC interfaces" Materials Research Society Proceeding. (In Press). (1997)

H.L.Bech、M.H.Lee 和 F.S.Ohuchi：“离子轰击对 SiC 表面和 A1/SiC 界面化学相互作用的影响”材料研究学会论文集。