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Wafer-scale MEMS Package by means of room temperature bonding

采用室温键合的晶圆级 MEMS 封装

基本信息

批准号：
16201028
负责人：
SUGA Tadatomo
金额：
$ 32.28万
依托单位：
The University of Tokyo
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (A)
财政年份：
2004
资助国家：
日本
起止时间：
2004 至 2006
项目状态：
已结题

项目摘要

A sequential plasma activation process is proposed to bond wafers of silicon and glasses at low temperature. The method is composed by oxygen plasma activation followed by nitrogen plasma activation. The effect of the surface activation on the bond strength and the bonding mechanism were investigated by using surface characterization. The bond strength increases with increasing the bonding temperature and the contents of OH group in the glasses does not affect the bond strength. The dependence of the bond strength on the plasma activation conditions was investigated quantitatively. The results of the characterization of the bonded interfaces using HRTEM show that there is an amorphous layer at the bonded interface which is induced by nitrogen radical irradiation, forming a kind of silicon oxynitride.As a new application of the proposed process, sapphire wafers were bonded to silicon at a temperature annealing as low as 300℃. No other method is known other than our proposal method for low temperature sapphire wafer bonding so far.Also the feasibility of low temperature wafer bonding of Lithium tantarate was demonstrated using the sequential plasma activation process at low temperature. The results show that a reliability enough high for industrial application such as SAW filters is achieved by bonding at low temperature in air, which fill the requirement of dicing the bonded wafers into 1 mm by 1mm pieces without delamination.Finally, a structure with microcavities was constructed by using the wafer bonding technique we propose in the present study. The tight sealing characteristic of the bonded interface was confirmed by a vacuum leak test.

提出了一种连续等离子体激活工艺来在低温下粘合硅和玻璃晶圆。该方法由氧等离子体活化和氮等离子体活化组成。通过表面表征研究了表面活化对键合强度和键合机理的影响。结合强度随着结合温度的升高而增加，且玻璃中OH基团的含量不影响结合强度。定量研究了键合强度对等离子体激活条件的依赖性。利用HRTEM对键合界面进行表征的结果表明，键合界面处存在由氮自由基辐照诱导产生的非晶层，形成一种氮氧化硅。作为该工艺的新应用，蓝宝石晶片在低至300℃的退火温度下与硅键合。到目前为止，除了我们提出的低温蓝宝石晶圆键合方法之外，还没有其他已知的方法。此外，使用低温连续等离子体激活工艺证明了钽酸锂低温晶圆键合的可行性。结果表明，通过在空气中进行低温键合，可以实现SAW滤波器等工业应用的足够高的可靠性，这满足了将键合晶圆切割成1毫米×1毫米片而不会分层的要求。最后，使用我们在本研究中提出的晶圆键合技术构建了具有微腔的结构。通过真空泄漏测试证实了粘合界面的紧密密封特性。