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Development of nano-scale processing with the tunneling electrons from a scanning tunneling microscope (STM) under atmospheric or reduced pressure

Development of nano-scale processing with the tunneling electrons from a scanning tunneling microscope (STM) under atmospheric or reduced pressure
在大气压或减压下利用扫描隧道显微镜 (STM) 的隧道电子开发纳米级加工
批准号:
03650539
负责人:
TERASHIMA Kazuo
金额:
$1.41万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for General Scientific Research (C)
财政年份:
1991
资助国家:
日本
项目状态:
已结题
起止时间:
1991 至 1992

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中文摘要
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英文摘要
A semi in-situ processing system was developed. It consists of a STM system, CVD chamber with a turbo molecular pump (TMP)(vacuumed below 10^<-7> Torr), a vibration isolator, Ta-filament and gas inlet system for CVD, and a substrate guiding system using a micrometer head. The STM system and the CVD system are separated by an AIN-BN thermal barrier. The substrate guiding system makes HOPG substrates go back and forth between the STM system and the CVD system. Since it can be adjusted to about 1mum, STM observations of same areas on nanometer scale can be performed successfully.Moreover, we examined the cleaved highly oriented pyrolytic graphite (HOPG) as substrates for nano-processing of diamond films. It is well-known that the large atomically flat and inert surface can be easily obtained. What was more fortunate, diamond films can be synthesized on a HOPG substrate.We tried semi in-situ observations of nanometer scale structures deposited by filamentassisted CVD of CH_4-H_2 system. Typical experimental conditions are as follows: gases, CH_4 + H_2(H_2/CH_4=49.5sccm/0.5sccm); total pressure, 50Torr; Ta-filament temperature, 1800 - 2300K; substrate, HOPG at room temperature; deposition time, 10sec. From the STM images before and after deposition, deposits about 10 to 100nm could be observed. Most of them were deposited along the natural steps of a HOPG substrate.Further researches at higher substrate and filament temperatures, where the nucleation of diamond is expected, are now in progress. In addition, using the surface modifications with using a STM, nano-processing of diamond films will have been developed.
期刊论文(9)
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会议论文
Kazuo Terashima and Toyonobu Yoshida: "New nano-processing with STM family" Shin-sozai. 3. 67-71 (1992)
Kazuo Terashima 和 Toyonobu Yoshida:“STM 系列的新纳米处理”Shin-sozai。
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通讯作者:
Kazuo Terashima and Toyonobu Yoshida: "NEW FUNCTIONALITY MATERIALS-DESIGN, PREPARATION AND CONTROL-" Elsevier Sci. Publ. B.V.(edited by T.Tsuruta, 1993).
Kazuo Terashima 和 Toyonobu Yoshida:“新功能材料-设计、制备和控制-”Elsevier Sci。
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通讯作者:
寺嶋 和夫,吉田 豊信: "STMファミリーによる新しいナノプロセシング-ファインマン機械(原子・分子コンピューター)を目指して-" 日本工業出版「新素材」. 3. 67-71 (1992)
Kazuo Terashima、Toyonobu Yoshida:“使用 STM 系列的新纳米处理 - 瞄准费曼机(原子/分子计算机)-”Nihon Kogyo Shuppan“新材料”。
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通讯作者:
K.Terashima,M.Kondoh,Y.Takamura,H.Komaki T.Yoshida: "Surface modification of BiーSrーCaーCuーO films deposited in situ by radio frequency plasma flash evaporation witha scanning tunneling microscope" Applied Physics Letters. 59. 644-646 (1991)
K. Terashima、M. Kondoh、Y. Takamura、H. Komaki T. Yoshida:“使用扫描隧道显微镜通过射频等离子体闪光蒸发原位沉积 Bi-Sr-Ca-Cu-O 薄膜的表面改性”应用物理信件 59。644-646(1991)
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9
    Creation of cryoplasma materials process science
    • 批准号:
      24246120
    • 项目类别:
      Grant-in-Aid for Scientific Research (A)
    • 资助金额:
      $29.7万
    • 财政年份:
      2012
    • 负责人:
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    • 依托单位:
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    • 批准号:
      24656436
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    • 资助金额:
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    • 负责人:
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    • 依托单位:
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    • 批准号:
      21360356
    • 项目类别:
      Grant-in-Aid for Scientific Research (B)
    • 资助金额:
      $11.56万
    • 财政年份:
      2009
    • 负责人:
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    • 依托单位:
    Creation of solution plasma controlled in nano space and Its application to materials processing
    • 批准号:
      19360326
    • 项目类别:
      Grant-in-Aid for Scientific Research (B)
    • 资助金额:
      $13.06万
    • 财政年份:
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    • 负责人:
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    • 依托单位:
    海外基金