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A NEURON-MOS NEURAL NETWORK FEATURING ON-CHIP SELF-LEARNING CAPABILITY

A NEURON-MOS NEURAL NETWORK FEATURING ON-CHIP SELF-LEARNING CAPABILITY
具有片上自学习功能的 NEURON-MOS 神经网络
批准号:
05505003
负责人:
SHIBATA Tadashi
金额:
$21.06万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Developmental Scientific Research (A)
财政年份:
1993
资助国家:
日本
项目状态:
已结题
起止时间:
1993 至 1994

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中文摘要
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英文摘要
Neural network hardware having an on-chip self-learning capability has been developed using a high-functionality device called Neuron MOS Transistor (vMOS) as a key circuit element. A vMOS can perform weighted summation of multiple input signals and thresholding all at a single transistor level based the charge sharing among multiple capacitors. An electronic synapse cell been constructed with six transistors by merging a floating-gate EEPROM memory cell into a new-concept vMOS differential-source-follower circuitry. The synapse can represent both positive (excitatory) and negative (inhibitory) weights under single V_<DD> power supply and is free from standby power dissipation. An excellent linearity in the weight updating characteristics of the synapse memory has been also established by employing a simple self-feedback regime in each cell circuitry, thus making in fully compatible to the on-chip self-learning architecture of vMOS neural networks. A new hardware-oriented learning algorithm called Hardware Backpropagation (HBP) has been developed by simplifyng and modifying the original Backpropagation (BP) algorithm. As a result, all learning actions are controlled by only digital signals with simple on-chip digital circuitry, thus enabling the direct implementation of the learning algorithm on the chip. The analog nature of the learning control is created by vMOS circuit technology. A new concept of "learning enhancement" has been introduced in order to guarantee the long-term stability of the learned state of analog neural networks. After optimization of the circuit parameters by extensive computer simulation, it has been demonstrated that HBP is superior to original BP both in the learning performance and in the generalization capability. The basic operation of the vMOS neural network having all above features has been experimentally verified using test circuits fabricated by a double-polysilicon CMOS process.
期刊论文(40)
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会议论文
T.Shibata: "Implementing Intelligence on Silicon using Neuron-like functional MOS transistors" Proc.7th Conference on Neural Information Processing Systems : Natural and Synthetic,(NIPS'93). (1994)
T.Shibata:“使用类似神经元的功能 MOS 晶体管在硅上实现智能”Proc.7th 神经信息处理系统会议:自然与合成,(NIPS93)。
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T.Ohmi: "The concept of bour-terminal-device and its significance in the implementation of intelligent electronic circuits" IEICE Transactions in Electronics. (1994)
T.Ohmi:“bour-terminal-device 的概念及其在智能电子电路实现中的意义”IEICE Transactions in Electronics。
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Hideo Kosaka, Tadashi Shibata, Hiroshi Ishii, and Tadahiro Ohmi: "An excellent weight-updating-linearity EEPROM synapse memory cell for self-learning neuron-MOS neural networks" IEEE Trans.Electron Devices. Vol.42、No.1. 135-143 (1995)
Hideo Kosaka、Tadashi Shibata、Hiroshi Ishii 和 Tadahiro Ohmi:“用于自学习神经元 MOS 神经网络的出色的权重更新线性 EEPROM 突触存储单元”IEEE Trans.Electron Devices 第 42 卷,第 135 期。 -143 (1995)
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H.Ishii: "Hardware-learning neural netwark LSI using a highly functional transistor simulating neuron actions" Proc.International Joint Conference on Neural Networks'93,Nagoya. 907-910 (1993)
H.Ishii:“使用高功能晶体管模拟神经元动作的硬件学习神经网络 LSI”Proc.International Joint Conference on Neural Networks93,名古屋。
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