Development of low temperatuer diamond synthesis apparatus using high magnetic field assisted dc plasma

点击翻译按钮获取中文摘要

In order to synthesize diamond at low substrate temperature by chemical vapor deposition, a newly type of apparatus has been developed using Penning ion source. This apparatus consists of a plasma genertor by dc discharge which has two cathode and a anode, and a superconducting magnet that generates the maximum magnetic field of 3 T.We have confirmed that the developed superconducting magnet can generates stable magnetic field of 3 T and plasma can be generated at low pressure of 10^<-3> Torr when a magnetic field of 1 T is impressed.Carbon films have been synthesized using methane gas for estimating the performance of the apparatus developed. Silicon has been used for substrate material, and the flow ratio of methane gas to hydrogen gas, the pressure in the reaction chamber and duration of film synthesis have been set at 5%, 0.67 Pa and 12h, respectively. During deposition of a carbon film, the magnetic field of 1 T has been impressed at discharge area. As a result, a dark-bule colored, insulated thin film has been deposited on the substrate surface of which temperature has been 35ﾟC.This film has been estimated by Raman spectroscopy and the film is found to be diamond-like carbon that contains diamond structure of carbon atoms. Although this indicates the possibility of diamond synthesis with the apparatus developed, the films are likely to be deposited by the reaction of methane gas in gas phase and the sputtering of electrode materials, it is found that how to eleminate this contamination is the next problem.