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Evaluation of Mechanical and Electrical Properties of Diamond Synthesized from Gas Phase

气相合成金刚石的机械和电学性能评价

基本信息

批准号：
01460089
负责人：
YOSHIKAWA Masanori
金额：
$ 3.84万
依托单位：
Tokyo Institute of Technology
依托单位国家：
日本
项目类别：
Grant-in-Aid for General Scientific Research (B)
财政年份：
1989
资助国家：
日本
起止时间：
1989 至 1990
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-01460089/
关键词：
Diamond film Gas Phase synthesis Laser planing Thermo-chemical reaction Ion beam planing Cutting tool Wear resistance Amorphous carbon レ-ザプレ-ニングイオンビ-ムスパッタリング

项目摘要

YAG laser cutting and planing of diamond films synthesized by arc discharge plasma jet CVD have been described. As a result, by controlling the energy density, cutting of a CVD diamond is possible. As for etching of CVD diamond in oxygen gas, preferentially amorphous carbon, grain boundary and fault in grain are vaporized and then diamond grains are oxidized. In the case of cutting, diamonds are removed by oxidization and Vaporization in the oxygen gas or by graphitization in the argon gas. Therefore by laser irradiation in the oxygen gas, clear cross sections were grained without graphite deposition. Moreover by controlling the incident angle, the surface planing is possible. The roughness of diamonds surface after planing by parallel incident laser beam was about 3um Rmax.Polishing is a essential technique to apply diamond films to industrial uses. It has been cleared that diamond film can be polished by using thermochemical reaction. The optimum condition of diamond film polishing u … More sing hot metallic plates is determined experimentally. Although diamond films deposited by microwave plasma CVD are not firmly connected to the surface of substrates, under low applied pressure and slow spinning speeds, diamond film can be polished smooth without peeling off the substrate by using hot metals. In this study, the effects of polishing conditions on polishing rate are xamined by changing the polishing plate materials, temperatures, atmospheric gases, applied pressures and spinning speeds. As an optimum polishing condition, a 7x7 mm diamond film with a surface of 2.5um Rmax is polished at 950C in vacuum for 15 minutes, using an iron polishing plate under an applied pressure 40kPa and a spinning speed 7mm/s. A smoothly polished surface of 2.5nm Ra is obtained.In order to estimate the toughness of diamond films, diamond coating on a ceramic and a PCD substrate were carried out. And by using these deposits as cutting tools, Al-Si alloys were turned. Though small peeling-off was observed on a ceramic substart diamond films did not wear even if 5452m of the cutting distance. It shows that the diamond films have good wear-resistance. Less

介绍了电弧放电等离子体射流CVD合成金刚石薄膜的YAG激光切割和刨削。因此，通过控制能量密度，可以切割CVD金刚石。在氧气中蚀刻CVD金刚石时，晶粒中的非晶态碳、晶界和断层优先汽化，金刚石晶粒被氧化。在切割时，金刚石在氧气中通过氧化和汽化或在氩气中通过石墨化去除。因此，在氧气中激光照射，晶粒清晰的横截面，没有石墨沉积。此外，通过控制入射角，可以实现表面刨削。平行入射激光束刨削后的金刚石表面粗糙度约为3um Rmax。抛光是将金刚石薄膜应用于工业用途的一项基本技术。研究表明，利用热化学反应对金刚石膜进行抛光是可行的。通过实验确定了热金属板金刚石膜抛光的最佳工艺条件。虽然微波等离子体CVD沉积的金刚石膜与基底表面连接不牢固，但在较低的压力和较慢的旋转速度下，金刚石膜可以在不剥离基底的情况下被抛光光滑。在本研究中，通过改变抛光板材料、温度、大气气体、施加压力和旋转速度，考察了抛光条件对抛光率的影响。作为最佳抛光条件，在950C真空条件下，使用铁抛光板，施加压力40kPa，旋转速度7mm/s，对表面Rmax为2.5um的7x7mm金刚石膜进行抛光15分钟。得到了光滑的2.5nm Ra表面。为了估计金刚石薄膜的韧性，在陶瓷和PCD衬底上进行了金刚石涂层。通过使用这些沉积物作为切削工具，铝硅合金得以加工。在切割距离为542m的情况下，金刚石膜仍未发生磨损。结果表明，金刚石膜具有良好的耐磨性。少