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Quantum technology capital: Multi-species single-ion implantation

量子技术资本：多物种单离子注入

基本信息

批准号：
EP/N015215/1
负责人：
Richard Curry
金额：
$ 375.89万
依托单位：
University of Surrey
依托单位国家：
英国
项目类别：
Research Grant
财政年份：
2016
资助国家：
英国
起止时间：
2016 至无数据
项目状态：
已结题

来源：
https://gtr.ukri.org/projects?ref=EP%2FN015215%2F1
关键词：
Quantum technology capital Multi species

项目摘要

The exploitation of single atoms for Quantum Technologies (QT) is most advanced for single-atom and single-ion electromagnetic traps in vacuum. Dopants in solids provide a natural form of trapping, as the impurity is held in place by the electromagnetic fields of the host solid around it, but on a length scale orders of magnitude smaller. Some solids, such as silicon can be made with an astonishing purity of 1 part per 100,000,000,000. This is so pure that nano-scale devices can be expected to have zero unintentional impurities and, if the doping is carefully controlled, a device can be constructed with a single, solitary impurity atom opening up a wealth of possibilities for solid state QT. This brings new challenges in engineering the local environment, but they are ideal objects for robust, reproducable QT applications. Single dopants provide 'qubits' of quantum information for clocks, sensors and computation, and non- classical light sources for quantum key distribution systems, quantum repeaters, quantum lithography, multivalent logic and local sensing.The first electronic observation of a single impurity in a semiconductor was made in a MOSFET device cooled to about 30K - the single, naturally occurring, unidentified bistable impurity close to the conduction channel produced random telegraph noise. Single electron transistor channels now allow specific nearby dopants to be identified by their effect on the electrical characteristics. In some cases single impurities may be incorporated with nanometre precision using Scanning Tunnelling Microscope tips, but a much greater variety could, in principle, be achieved with ion implantation. Ion implantation is a microelectronic industry standard technique, and Surrey University houses the UK National Ion Beam Centre. Although implantation with a lateral accuracy of about 20 nm has been reported, it has only previously been possible with lithographically produced masks. This has already been used to create active devices that involve two phosphorus atoms in silicon close enough for their spins to exchange in a flip-flop interaction, but the functionality of this device was restricted by the limited accuracy of the implantation technique, and it has not been reproduced. A much more scalable, reproducible technology would be to use highly focused ion beams, but this requires a significant advancement in implantation tools. This proposal is to install the world's first single ion implantation tool with 20nm lateral beam focus, with the ability to implant any species from gas or solid source. The tool will serve the UK need for an open access user facility for academia and industry in QTs.Using this tool, we will enable implantation of single bismuth atoms in silicon, single nitrogen atoms in diamond, single erbium atoms in sapphire, and single manganese atoms in GaAs. Each of these exemplifies a different QT platform and covers applications from magnetometry to imaging, computation and single photon emission. We will characterize and image the single atom devices, either via collaboration with key partners (in the case of diamond NV) or in house (in the case of Bi in Si). In the case of the Si:Bi (and other silicon shallow impurities) we will install a world leading near-field imaging system using terahertz frequency light. This will take advantage of Surrey's strategic partnership with the National Physical Laboratory (NPL).

单原子量子技术（QT）在真空中单原子和单离子电磁阱的开发是最先进的。固体中的掺杂剂提供了一种自然的捕获形式，因为杂质被周围的宿主固体的电磁场保持在原位，但在长度尺度上要小几个数量级。有些固体，如硅，纯度可以达到惊人的一亿分之一。这是如此纯净，以至于纳米级器件可以预期没有无意的杂质，如果仔细控制掺杂，可以用单个，孤立的杂质原子构建器件，为固态QT开辟了丰富的可能性，这给局部环境的工程带来了新的挑战，但它们是健壮的，可重复的QT应用的理想对象。单掺杂剂为时钟、传感器和计算提供量子信息的“量子位”，为量子密钥分配系统、量子中继器、量子光刻、多价逻辑和局部传感提供非经典光源。第一次对半导体中单一杂质的电子观察是在冷却到约30K的MOSFET器件中进行的-靠近传导通道的单一，自然发生的，未识别的双稳态杂质产生随机电报噪声。单电子晶体管通道现在允许通过对电特性的影响来识别特定的附近掺杂物。在某些情况下，单一杂质可以用扫描隧道显微镜的尖端以纳米级的精度掺入，但原则上，离子注入可以实现更多种类的掺入。离子注入是一种微电子工业标准技术，英国国家离子束中心设在萨里大学。虽然有报道称植入的横向精度约为20纳米，但以前只能用光刻技术生产掩模。这种方法已经被用于制造有源器件，这种有源器件涉及硅中的两个磷原子，距离足够近，它们的自旋可以在触发器相互作用中交换，但是这种器件的功能受到植入技术有限的精度的限制，而且它还没有被复制。一种更具可扩展性和可重复性的技术是使用高度聚焦的离子束，但这需要在植入工具上取得重大进展。该提案是安装世界上第一个具有20nm横向光束聚焦的单离子注入工具，能够从气体或固体源植入任何物种。该工具将满足英国对QTs学术界和工业界开放访问用户设施的需求。利用该工具，我们将能够在硅中植入单个铋原子，在金刚石中植入单个氮原子，在蓝宝石中植入单个铒原子，在砷化镓中植入单个锰原子。每一个例子都是一个不同的QT平台，涵盖了从磁力计到成像、计算和单光子发射的应用。我们将通过与主要合作伙伴（在金刚石NV的情况下）或内部（在Bi in Si的情况下）的合作，对单原子器件进行表征和成像。在Si:Bi（和其他硅浅层杂质）的情况下，我们将使用太赫兹频率光安装世界领先的近场成像系统。这将利用萨里大学与国家物理实验室（NPL）的战略合作伙伴关系。