HIGH PERFORMANCE DEVICES FOR GIGASCALE INTEGRATED SYSTEMS
HIGH PERFORMANCE DEVICES FOR GIGASCALE INTEGRATED SYSTEMS
批准号:
07044111
负责人:
OHMI Tadahiro
金额:
$3.39万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for international Scientific Research
财政年份:
1995
资助国家:
日本
项目状态:
已结题
起止时间:
1995 至 1996
中文摘要
点击翻译按钮获取中文摘要
英文摘要
1. High Functional LSI and Gigascale Integrated System realized by four-terminal deviceWe have realized elemental circuits for an intelligent electronic system by using a four-terminal device, Neuron-MOS (vMOS), as an elemental device. Test circuits were designed, fabricated and evaluated by the measurement of fabricated test circuits.Real-time motion-vector detector and real-time center-of-mass tracer circuit have been developed by using vMOS.High-speed and high-accuracy analog non-volatile memory, vMOS correlator based on Manhattan distance computation, vMOS winner-take-all circuit, which are the key elements of intelligent event-recognition hardware, have been developed. By using the same architecture as the event-recognition hardware, we have developed a vector quantization (VQ) processor chip for real-time motion picture compression using digital circuit technology. The VQ chip exhibits 1,000 times superior speed performance compared to software realization using a microprocessor … More (Pentium 166MHz).2. Low Power Device / Circuit Technology for Gigascale IntegrationLow power operation of the circuit is essential for gigascale integration. We have developed two new low-power circuit schemes for vMOS.One is a sense-amp vMOS logic circuit scheme, which is developed by applying a sense-amplifier to the vMOS logic decision circuit. The other is a deep-threshold vMOS scheme, in which deep threshold transistors and effectively-designed buffer circuit are utilized. Ta-gate SOI-MOSFET which exhibits high performance even with a 1V power supply has been developed. Extremely-low-power adiabatic logic circuit scheme has also been developed for the gigascale integrated circuit.3. Limit to the gigascale integrationOpportunities for gigascale integration are governed by a hierarchy of physical limits whose five levels can be classified as : fundamental, material, device, circuit, and system. This distinctive methodology is extended by elucidating the impact on gigascale integration of random dopant atom placement in the channel region of a MOSFET.4. Optimization of the system configurationBased on a newly derived complete stochastic interconnect distribution, an optimal wiring network architecture is defined that minimizes chip area and power dissipation. Less
期刊论文(19)
专著(0)
科研奖励(0)
会议论文
登录
查看更多内容
Hisayuki Shimada and Tadahiro Ohmi: "Current Drive Enhancement by Using High-Permittivity Gate Insulator in SOI MOSFET's and ItsLimitation" IEEE Trans.on Electron Devices. 43. 431-435 (1996)
Hisayuki Shimada 和 Tadahiro Ohmi:“在 SOI MOSFET 中使用高介电常数栅极绝缘体增强电流驱动及其限制”IEEE Trans.on Electron Devices。
DOI:
--
发表时间:
期刊:
影响因子:
--
作者:
[]
通讯作者:
T.Shibata: "A Neuron-MOS Neural Network Using Self-Learning-Compatible Synapse Circuits" IEEE J. Solid-State Circuits. 30. 913-922 (1995)
T.Shibata:“使用自学习兼容突触电路的神经元-MOS 神经网络”IEEE J. 固态电路。
DOI:
--
发表时间:
期刊:
影响因子:
--
作者:
[]
通讯作者:
T.Shibata: "Advances in Neuron-MOS Applications" Dig. Tech. Papers, 1996 Int. Solid-State Circ. Conf.304-305 (1996)
T.Shibata:“Neuron-MOS 应用的进展”Dig。
DOI:
--
发表时间:
期刊:
影响因子:
--
作者:
[]
通讯作者:
T.Ohmi: "Intelligence Implementation on Silicon Based on Four-Terminal Device Electronics" Proc.20th Int.Conf.on Microelectronics. 1. 11-18 (1995)
T.Ohmi:“基于四端子器件电子学的硅智能实现”Proc.20th Int.Conf.on Micro electronics。
DOI:
--
发表时间:
期刊:
影响因子:
--
作者:
[]
通讯作者:
T.Ohmi: "Four-Terminal Device Electronics for Intelligent Silicon Integrated System" Ext. Abst., 1995 Int. Conf. on Solid State Devices and Materials. 1-3 (1995)
T.Ohmi:“智能硅集成系统的四端子器件电子学”分机。
DOI:
--
发表时间:
期刊:
影响因子:
--
作者:
[]
通讯作者:
共 19 条
Study on fabrication process of 3-D structured MOS transistor having atomically flat gate insulator/Si interface
-
批准号:22000010
-
项目类别:Grant-in-Aid for Specially Promoted Research
-
资助金额:$394.7万
-
财政年份:2010
-
负责人:OHMI Tadahiro
-
依托单位:
Balanced Full CMOS LSI for Ultra High Performance and Ultra Low PowerConsumption
-
批准号:18002004
-
项目类别:Grant-in-Aid for Specially Promoted Research
-
资助金额:$361.5万
-
财政年份:2006
-
负责人:OHMI Tadahiro
-
依托单位:
Ultra-High-Speed and High-Precision Integration Circuit Using Si(110) Surface Metal Substrate SOI Balanced-CMOS
-
批准号:14205052
-
项目类别:Grant-in-Aid for Scientific Research (A)
-
资助金额:$35.44万
-
财政年份:2002
-
负责人:OHMI Tadahiro
-
依托单位:
Plasma process technology controlling dissociation of process gas for realizing step-by-step investment semiconductor manufacturing
-
批准号:12355014
-
项目类别:Grant-in-Aid for Scientific Research (A)
-
资助金额:$25.86万
-
财政年份:2000
-
负责人:OHMI Tadahiro
-
依托单位:
Ultra-High-Speed Real-Time Processing Circuit and Algorithm
-
批准号:12044202
-
项目类别:Grant-in-Aid for Scientific Research on Priority Areas
-
资助金额:$198.4万
-
财政年份:2000
-
负责人:OHMI Tadahiro
-
依托单位:
Development of ultra-high-speed LSI with gas-isolated-interconnects and Ta metal gate transistors on SOI substrate
-
批准号:12305020
-
项目类别:Grant-in-Aid for Scientific Research (A)
-
资助金额:$26.62万
-
财政年份:2000
-
负责人:OHMI Tadahiro
-
依托单位:
Ultimate Integration of Intelligence on Silicon Electronic Systems
-
批准号:07248101
-
项目类别:Grant-in-Aid for Scientific Research on Priority Areas (A)
-
资助金额:$12.03万
-
财政年份:1999
-
负责人:OHMI Tadahiro
-
依托单位:
Mixed Integrated Systems for Real-Time Intelligent Processing
-
批准号:11176101
-
项目类别:Grant-in-Aid for Scientific Research on Priority Areas
-
资助金额:$18.05万
-
财政年份:1999
-
负责人:OHMI Tadahiro
-
依托单位:
Metal-substrate SOI integrated circuits technologies for 10GHz clock operation
-
批准号:10305022
-
项目类别:Grant-in-Aid for Scientific Research (A)
-
资助金额:$22.78万
-
财政年份:1998
-
负责人:OHMI Tadahiro
-
依托单位:
Scientific LSI Processing for Intelligent Electronic Systems
-
批准号:10044114
-
项目类别:Grant-in-Aid for Scientific Research (B).
-
资助金额:$2.24万
-
财政年份:1998
-
负责人:OHMI Tadahiro
-
依托单位:
High Speed Field Programmable LSI Using Current-Drive Silicidation
-
批准号:07405014
-
项目类别:Grant-in-Aid for Scientific Research (A)
-
资助金额:$24.0万
-
财政年份:1995
-
负责人:OHMI Tadahiro
-
依托单位:
Research on Metal-Gate, High-Permittivity Gate-Insulator, Metal-Substrate SOI CMOS LSI
-
批准号:05402039
-
项目类别:Grant-in-Aid for General Scientific Research (A)
-
资助金额:$23.04万
-
财政年份:1993
-
负责人:OHMI Tadahiro
-
依托单位:
Study on Ultra High Speed Integrated Circuit Employing Metals in the Heart of the Device Structure
-
批准号:02402031
-
项目类别:Grant-in-Aid for General Scientific Research (A)
-
资助金额:$16.83万
-
财政年份:1990
-
负责人:OHMI Tadahiro
-
依托单位:
DEVELOPMENT OF DUAL-FREQUENCY EXCITATION, LOW-KINETIC-ENERGY PARTICLE PROCESS EQUIPMENT
-
批准号:63850058
-
项目类别:Grant-in-Aid for Developmental Scientific Research
-
资助金额:$25.15万
-
财政年份:1988
-
负责人:OHMI Tadahiro
-
依托单位:
STUDY OF INTERCONNECT STRUCTURES FOR ULTR-HIGH-SPEED LSI'S
-
批准号:62420031
-
项目类别:Grant-in-Aid for General Scientific Research (A)
-
资助金额:$13.44万
-
财政年份:1987
-
负责人:OHMI Tadahiro
-
依托单位:
Study of Singlecrystalline Pure Metal Interconnect for VLSI's
-
批准号:60460117
-
项目类别:Grant-in-Aid for General Scientific Research (B)
-
资助金额:$4.74万
-
财政年份:1985
-
负责人:OHMI Tadahiro
-
依托单位: