课题基金 / 基金详情

HIGH PERFORMANCE DEVICES FOR GIGASCALE INTEGRATED SYSTEMS

HIGH PERFORMANCE DEVICES FOR GIGASCALE INTEGRATED SYSTEMS
适用于千兆级集成系统的高性能设备
批准号:
07044111
负责人:
OHMI Tadahiro
金额:
$3.39万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for international Scientific Research
财政年份:
1995
资助国家:
日本
项目状态:
已结题
起止时间:
1995 至 1996

项目摘要

项目成果

OHMI Tadahiro的其他基金

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中文摘要
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英文摘要
1. High Functional LSI and Gigascale Integrated System realized by four-terminal deviceWe have realized elemental circuits for an intelligent electronic system by using a four-terminal device, Neuron-MOS (vMOS), as an elemental device. Test circuits were designed, fabricated and evaluated by the measurement of fabricated test circuits.Real-time motion-vector detector and real-time center-of-mass tracer circuit have been developed by using vMOS.High-speed and high-accuracy analog non-volatile memory, vMOS correlator based on Manhattan distance computation, vMOS winner-take-all circuit, which are the key elements of intelligent event-recognition hardware, have been developed. By using the same architecture as the event-recognition hardware, we have developed a vector quantization (VQ) processor chip for real-time motion picture compression using digital circuit technology. The VQ chip exhibits 1,000 times superior speed performance compared to software realization using a microprocessor … More (Pentium 166MHz).2. Low Power Device / Circuit Technology for Gigascale IntegrationLow power operation of the circuit is essential for gigascale integration. We have developed two new low-power circuit schemes for vMOS.One is a sense-amp vMOS logic circuit scheme, which is developed by applying a sense-amplifier to the vMOS logic decision circuit. The other is a deep-threshold vMOS scheme, in which deep threshold transistors and effectively-designed buffer circuit are utilized. Ta-gate SOI-MOSFET which exhibits high performance even with a 1V power supply has been developed. Extremely-low-power adiabatic logic circuit scheme has also been developed for the gigascale integrated circuit.3. Limit to the gigascale integrationOpportunities for gigascale integration are governed by a hierarchy of physical limits whose five levels can be classified as : fundamental, material, device, circuit, and system. This distinctive methodology is extended by elucidating the impact on gigascale integration of random dopant atom placement in the channel region of a MOSFET.4. Optimization of the system configurationBased on a newly derived complete stochastic interconnect distribution, an optimal wiring network architecture is defined that minimizes chip area and power dissipation. Less
期刊论文(19)
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会议论文
Hisayuki Shimada and Tadahiro Ohmi: "Current Drive Enhancement by Using High-Permittivity Gate Insulator in SOI MOSFET's and ItsLimitation" IEEE Trans.on Electron Devices. 43. 431-435 (1996)
Hisayuki Shimada 和 Tadahiro Ohmi:“在 SOI MOSFET 中使用高介电常数栅极绝缘体增强电流驱动及其限制”IEEE Trans.on Electron Devices。
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T.Shibata: "A Neuron-MOS Neural Network Using Self-Learning-Compatible Synapse Circuits" IEEE J. Solid-State Circuits. 30. 913-922 (1995)
T.Shibata:“使用自学习兼容突触电路的神经元-MOS 神经网络”IEEE J. 固态电路。
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T.Ohmi: "Intelligence Implementation on Silicon Based on Four-Terminal Device Electronics" Proc.20th Int.Conf.on Microelectronics. 1. 11-18 (1995)
T.Ohmi:“基于四端子器件电子学的硅智能实现”Proc.20th Int.Conf.on Micro electronics。
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19
    Study on fabrication process of 3-D structured MOS transistor having atomically flat gate insulator/Si interface
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    • 项目类别:
      Grant-in-Aid for Scientific Research (A)
    • 资助金额:
      $35.44万
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      2002
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    • 批准号:
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    • 项目类别:
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    • 资助金额:
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    • 财政年份:
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