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Plasma process technology controlling dissociation of process gas for realizing step-by-step investment semiconductor manufacturing

控制工艺气体解离的等离子体工艺技术，实现分步投资半导体制造

基本信息

批准号：
12355014
负责人：
OHMI Tadahiro
金额：
$ 25.86万
依托单位：
Tohoku University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (A)
财政年份：
2000
资助国家：
日本
起止时间：
2000 至 2001
项目状态：
已结题

项目摘要

In this study, we developed the innovative plasma process by using newly developed dual shower plate structure in the microwave excitation plasma equipment. By introducing SiH_4 gas into the low electron temperature diffusion Kr/O_2 plasma region excited by microwave, silicon oxide CVD process was carried out. As a result, we obtain silicon oxide layer which indicates 4x10^<10> eV^<-1> cm^<-2> of interface level density and 12 or more MV/cm of withstand voltage, whose electric quality is almost as same as that of the layer formed by thermal oxidation process. Moreover, in order to realize further miniaturization of advanced features of an LSI devices, SiO_2 insulator etching technology was developed using BED magnetron plasma. Then it was clarified that career inactivation can be completely suppressed by saving excess dissociation of material gas using the low electron temperature Xe plasma. It was also found that the selectivity ratio against resist was 20 and etching to 0.08 μm were … More possible without micro-loading effect using C_5F_8 gas.In a small-scale production line, the gas supply systems which make it possible to replace purge gas with process gas promptly or to change the process gas composition immediately are required. In this research, we accomplished to stabilize chamber gas pressure and the gas composition within in 2 seconds by adopting a gas pressure control flow rate control system as gas supplement and controlling exhaust gas speed simultaneously by adjusting flow rate of purge gas to a secondary side of exhaust pump.Neither the turbo molecular pump nor back pump currently used for the semiconductor and LCD process equipment fits a high-speed processes which need to exhaust large volume gas because of poor exhaust speed in the pressure range of several ten to several hundred mTorr. In this research, the new back pump which has high exhaust capability for large pressure region from the viscous flow to a molecule flow was developed by making the rotor of a pump into a inequality lead and inequality slope angle screw structure. This pump is quite adequate tor a small-scale production line because of no deposition by chemical reaction, maintenance-free, small size, and low power consumption. Less

在本研究中，我们利用新开发的双喷淋板结构在微波激励等离子体设备中开发了创新的等离子体工艺。通过在微波激励的低电子温度扩散Kr/O2等离子体区引入SiH4气体，实现了硅氧化物CVD工艺。得到的硅氧化层的界面能级密度为4×10~(-1)cm~(-2)~(-2)，耐压为12 mV/cm~(-2)，其电学性能与热氧化工艺制备的硅氧化层相当。此外，为了进一步实现大规模集成电路器件先进特性的小型化，利用床磁控等离子体技术开发了SiO_2绝缘层刻蚀技术。然后阐明了用低电子温度的Xe等离子体节省物质气体的过度解离可以完全抑制职业失活。对抗蚀剂的选择性比为20，刻蚀至0.08μm为…使用C5F8气体更有可能没有微负荷效应。在小型生产线上，要求供气系统能够迅速用工艺气替代吹扫气或立即改变工艺气组成。在本研究中，我们采用气体压力控制流量控制系统作为气体补充，同时通过调节排气泵二次侧的排气流量来控制排气速度，在2秒内实现了腔内气体压力和气体成分的稳定。目前用于半导体和LCD工艺设备的涡轮分子泵和背泵都不适合高速工艺，因为在几十到几百毫托的压力范围内，排气速度很低，需要排放大量的气体。在本研究中，通过将泵的转子制成不等导程、不等斜角的螺杆结构，研制出了一种新型的背泵，它具有从粘性流到分子流的大压力范围内的高排气能力。该泵具有无化学反应沉积、免维护、体积小、功耗低等特点，适用于小型生产线。较少