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Metal-substrate SOI integrated circuits technologies for 10GHz clock operation

用于 10GHz 时钟操作的金属衬底 SOI 集成电路技术

基本信息

批准号：
10305022
负责人：
OHMI Tadahiro
金额：
$ 22.78万
依托单位：
TOHOKU UNIVERSITY
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (A)
财政年份：
1998
资助国家：
日本
起止时间：
1998 至 1999
项目状态：
已结题

项目摘要

The purpose of this research project is to develop an ideal device structure for use in ultra-fast and ultra-high-density integrated circuit, I.e., gas isolated interconnect structure, metal-gate, high-permittivity gate insulator, metal-substrate SOI CMOS LSI. These technologies will increase integrated circuits operating frequency up to 20 GHz although 1 GHz was recognized as the upper limit in the present technology. In order to establish this device structure as industrial products, we have developed several excellent technologies based on the ultraclean processing concept, as follows :I) Low-temperature Si epitaxial growth technology, II) Kr/OィイD22ィエD2 low-temperature oxidation technology, III) SiィイD23ィエD2NィイD24ィエD2 gate dielectric formation technology by microwave excited high-density plasma, IV) Low-temperature ultra-shallow source/drain junction formation technology, V) Low-resistivity bcc-phase Ta gate electrode formation technology by Xe plasma sputtering, VI) Giant-grain copper interconnects technology using TaNィイD22ィエD2 diffusion barrier layer, VII) Low-resistivity tantalum-silicided junction formation technology using Si-encapsulated silicidation technique, VIII) characterization technique of electrically active interface defects for SOI MOS device.These results lead not only to the realization of ultrahigh-speed devices but also to the establishment of a number of advanced processing technologies which certainly will become the main stream in microelectronics in sub-100 nm era, impacting greatly the semiconductor manufacturing technology in future.

本研究项目的目的是开发一种用于超快速、超高密度集成电路的理想器件结构，即气体隔离互连结构、金属栅极、高介电常数栅极绝缘体、金属衬底SOI CMOS LSI。这些技术将把集成电路的工作频率提高到20 GHz，尽管目前的技术中公认的上限是1 GHz。为了建立这个设备结构作为工业产品,我们开发了基于超净处理的几个优秀的技术概念,如下:1)低温硅外延生长技术,2)Kr / OィイD22摊位ィエD2低温氧化技术,3)如果ィイc15ィエD2NィイD24ィエD2栅极绝缘层形成由微波兴奋高密度等离子体技术,(四)低温超浅源/排水结形成技术,V) Xe等离子溅射低电阻率bcc相Ta栅电极形成技术，VI)利用TaN γ γ γ扩散势垒层的大晶粒铜互连技术，VII)利用si封装硅化技术的低电阻率钽硅化结形成技术，VIII) SOI MOS器件电活性界面缺陷表征技术。这些成果不仅实现了超高速器件，而且建立了一系列先进的加工技术，这些技术必将成为亚100纳米时代微电子技术的主流，对未来的半导体制造技术产生重大影响。