Study on fabrication process of 3-D structured MOS transistor having atomically flat gate insulator/Si interface

具有原子级平坦栅绝缘体/Si界面的3D结构MOS晶体管制作工艺研究

• 批准号: 22000010
• 负责人: OHMI Tadahiro
• 金额: $ 394.7万
• 依托单位: Tohoku University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Specially Promoted Research
• 财政年份: 2010
• 资助国家: 日本
• 起止时间: 2010-04-21 至 2015-03-31
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-22000010/
• 关键词: シリコン; MOSFET; LSI; 半導体製造プロセス; 半導体製造装置; MOSトランジスタ; シリコン表面平坦化; プラズマプロセス; 面方位; ラフネス; シリサイド; 3次元構造

项目成果

Detection of oxidation-induced compressive stress in Si (100) substrate near the SiO2/Si interface with atomic-scale resolution

以原子级分辨率检测 SiO2/Si 界面附近 Si (100) 衬底中氧化引起的压应力

• 发表时间: 2013
• 作者: T. Suwa;K. Nagata;H. Nohira;K. Nakajima;A. Teramoto;A. Ogura;K. Kimura;T. Muro;T. Kinoshita;S. Sugawa;T. Hattori;T. Ohmi
• 通讯作者: T. Ohmi

Schottky Barrier Height Between Erbium Silicide and Various Morphology of Si (100) Surface Changed by Alkaline Etching

硅化铒的肖特基势垒高度与碱性蚀刻改变的Si(100)表面的各种形貌

• DOI: 10.1149/05807.0349ecst
• 发表时间: 2013
• 期刊: ECS Transactions
• 作者: Hiroaki Tanaka;Akinobu Teramoto;Shigetoshi Sugawa;and Tadahiro Ohmi
• 通讯作者: and Tadahiro Ohmi

Angle-resolved photoelectron spectroscopy study on interfacial transition layer and oxidation-induced residual stress in Si (100) substrate near the interface

Si(100)基体界面附近过渡层及氧化残余应力的角分辨光电子能谱研究

• DOI: 10.1016/j.mee.2013.03.004
• 发表时间: 2013
• 期刊: Microelectronic Engineering
• 影响因子: 2.3
• 作者: Tomoyuki Suwa;Akinobu Teramoto;Kohki Nagata;Atsushi Ogura;Hiroshi Nohira;Takayuki Muro;Toyohiko Kinoshita;Shigetoshi Sugawa;Tadahiro Ohmi;and Takeo Hattori
• 通讯作者: and Takeo Hattori

Comprehensive Study on Chemical Structures of Compositional Transition Layer at SiO2/Si(100) Interface

SiO2/Si(100)界面复合过渡层化学结构综合研究

• 发表时间: 2012
• 期刊: ECS Transactions
• 作者: M. Yamada;Y. Muto;H. Kurihara;Z. Slanina;M. Suzuki;Y. Maeda;Y. Rubin;M.M. Olmstead;A.L. Balch;S. Nagase;X. Lu;and T. Akasak;T. Yamazaki;Tomoyuki Suwa
• 通讯作者: Tomoyuki Suwa

Science-based New Silicon Technologies Exhibiting Super High Performance due to Radical-reaction-based Semiconductor Manufacturing

基于科学的新硅技术由于基于自由基反应的半导体制造而展现出超高性能

• 发表时间: 2011
• 期刊: Journal of the Korean Physical Society
• 影响因子: 0.6
• 作者: H.Katada;M.Komiyama;Tadahiro Ohmi
• 通讯作者: Tadahiro Ohmi