Ultra-High-Speed and High-Precision Integration Circuit Using Si(110) Surface Metal Substrate SOI Balanced-CMOS

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In order to improve the quality of Si_3N_4 gate insulator used as the gate insulator in MISFET, microwave-excited Xe plasma gas was used instead of conventional Ar plasma. Xe plasma can realize damage-free processes because the electron temperature is very low (0.5 eV). As a result, life time of the insulator (Qbd) became 10^4 times as long as that of the conventional one. In addition, the room temperature 5 steps cleaning were introduced instead of the conventional RCA cleaning. This cleaning can realize flat Si(110) surface (Ra:=0.08nm). Therefore, 1/f noise was suppressed 10^2 times as low as the conventional level and hole mobility was 2.5 times improved and balanced as compared with electron mobility.Appling those technologies balanced-CMOS in which the areas of nMOS and pMOS are the same was fabricated. Theoretically predicted properties of the balanced-CMOS were confirmed experimentally. Particularly, the 101 steps CMOS ring oscillation was successfully observed and the merits of the usage of Si(110)surface as compared with Si(100)surface was confirmed. As a result, the technology for the fabrications of system-LSI with operating frequency range above 10 GHz was established for network home information appliances in the next generation.