Ultra-High-Speed and High-Precision Integration Circuit Using Si(110) Surface Metal Substrate SOI Balanced-CMOS

采用Si(110)表面金属衬底SOI平衡-CMOS的超高速高精度集成电路

• 批准号: 14205052
• 负责人: OHMI Tadahiro
• 金额: $ 35.44万
• 依托单位: TOHOKU UNIVERSITY
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (A)
• 财政年份: 2002
• 资助国家: 日本
• 起止时间: 2002 至 2003
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-14205052/
• 关键词: Si(110)surface; Si_3N_4 gate insulator; Balanced-CMOS; 1; f noise; Room Temperature 5 step Cleaning; System LSI; Channel mobility; Microwave-excited high-density plasma; Si(110); SOI; CMOS; 陽極化成

In order to improve the quality of Si_3N_4 gate insulator used as the gate insulator in MISFET, microwave-excited Xe plasma gas was used instead of conventional Ar plasma. Xe plasma can realize damage-free processes because the electron temperature is very low (0.5 eV). As a result, life time of the insulator (Qbd) became 10^4 times as long as that of the conventional one. In addition, the room temperature 5 steps cleaning were introduced instead of the conventional RCA cleaning. This cleaning can realize flat Si(110) surface (Ra:=0.08nm). Therefore, 1/f noise was suppressed 10^2 times as low as the conventional level and hole mobility was 2.5 times improved and balanced as compared with electron mobility.Appling those technologies balanced-CMOS in which the areas of nMOS and pMOS are the same was fabricated. Theoretically predicted properties of the balanced-CMOS were confirmed experimentally. Particularly, the 101 steps CMOS ring oscillation was successfully observed and the merits of the usage of Si(110)surface as compared with Si(100)surface was confirmed. As a result, the technology for the fabrications of system-LSI with operating frequency range above 10 GHz was established for network home information appliances in the next generation.

为了提高MISFET栅绝缘体Si_3N_4的质量，用微波激励的Ar等离子体代替传统的Ar等离子体。由于电子温度很低（0.5eV），因此，等离子体可以实现无损伤过程。结果，绝缘体的寿命（Qbd）变为常规绝缘体的寿命的10^4倍。此外，引入室温5步清洗代替传统的RCA清洗。这种清洗可以实现平坦的Si（110）表面（Ra =0.08nm）。因此，1/f噪声被抑制为传统水平的10^2倍，空穴迁移率与电子迁移率相比提高了2.5倍，并且平衡了。理论预测的平衡CMOS的性能得到了实验证实。特别地，成功地观察到了101阶CMOS环形振荡，并且证实了与Si（100）表面相比，使用Si（110）表面的优点。因此，为下一代网络家庭信息设备建立了工作频率范围超过10 GHz的系统LSI制造技术。

项目成果

I Takahashi, H.Sakurai, A.Yamada, K.Funaiwa, K.Hirai, S.Urabe, T.Goto, M.Hirayama, A.Teramoto, S.Sugawa, T.Ohmi: "Oxygen radical treatment applied to ferroelectric thin films"Applied Surface Science. Vol.216. 239-245 (2003)

I Takahashi、H.Sakurai、A.Yamada、K.Funaiwa、K.Hirai、S.Urabe、T.Goto、M.Hirayama、A.Teramoto、S.Sukawa、T.Ohmi：“应用于铁电体的氧自由基处理

H.TANAKA, Z.CHUANJIE, Y.HAYAKAWA, M.HIRAYAMA, A.TERAMOTO, S.SUGAWA, T.OHMI: "High-Quality Silicon Oxide Film Formed by Diffusion Region Plasma Enhanced Chemical Vapor Deposition and Oxygen Radical Treatment Using Microwave-Excited High-Density Plasma"Jpn.

H.TANAKA、Z.CHUANJIE、Y.HAYAKAWA、M.HIRAYAMA、A.TERAMOTO、S.SUGAWA、T.OHMI：“通过扩散区等离子体增强化学气相沉积和微波氧自由基处理形成高质量氧化硅薄膜

I TAKAHASHI, H.SAKURAI, A.YAMADA, K.FUNAIWA, K.HIRAI, S.URABE, T.GOTO, M.HIRAYAMA, A.TERAMOTO, S.SUGAWA, T.OHMI: "Ferroelectric Sr_2 (Ta_<1-x>,Nb_x) _2O_7 with a Low Dielectric Constant by Plasma Physical Vapor Deposition and Oxygen Radical Treatment"Jpn.

I TAKAHASHI、H.SAKURAI、A.YAMADA、K.FUNAIWA、K.HIRAI、S.URABE、T.GOTO、M.HIRAYAMA、A.TERAMOTO、S.SUGAWA、T.OHMI：“铁电 Sr_2 (Ta_<1

K.Tanaka, K.Watanabe, H.Ishino, S.Sugawa, A.Teramoto, M.Hirayama, T.Ohmi: "A Technology for Reducing Flicker Noise for ULSI Applications"Jpn.J.Appl.Phys.. Vol.42 No.4B. 2106-2109 (2003)

K.Tanaka、K.Watanabe、H.Ishino、S.Sukawa、A.Teramoto、M.Hirayama、T.Ohmi：“减少 ULSI 应用闪烁噪声的技术”Jpn.J.Appl.Phys.Vol。

I.Takahashi, H.Sakurai, A.Yamada, K.Funaiwa, K.Hirai, S.Urabe, T.Goto, M.Hirayama, A.Teramoto, S.Sugawa, T.Ohmi: "Oxygen radical treatment applied to ferroelectric thin films"Applied Surface Science. Vol.216. 239-245 (2003)

I.Takahashi、H.Sakurai、A.Yamada、K.Funaiwa、K.Hirai、S.Urabe、T.Goto、M.Hirayama、A.Teramoto、S.Sukawa、T.Ohmi：“氧自由基治疗应用于