Crystal Growth of InGaAsSb Compound Semiconductors for Infrared Devices

红外器件用 InGaAsSb 化合物半导体的晶体生长

• 批准号: 07650010
• 负责人: KUMAGAWA Masashi
• 金额: $ 1.22万
• 依托单位: Shizuoka University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 1995
• 资助国家: 日本
• 起止时间: 1995 至 1996
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-07650010/
• 关键词: Infrared Material; Compound Semiconductor; Crystal Growth; 四元化合物半導体; InGaAsSb

It is very important to understand the crystal growth of ternary compound semiconductors in order to grow InGaAsSb crystals used as infrared materials. First, the control of compositional ratio, segregation, and crystal quality were investigated in Cz-grown InGaSb and GaAlSb, and also in InGaAs grown by both the temperature difference method and the rotary Bridgman method. Further, the model of crystal growth was simulated compared with the experimental results. Concerning the hetero growth of InGaAs on GaAs, crystal layrs of low defect density (10^4/cm^2) was obtained on the SiN_x thin layr by the lateral over growth technique. The crystal quality was not changed even if the compositional ratio of In in InGaAs was increased from 0.06 to 0.1. Next, in the growth of multi-layrs with different compositional ratios, the optical properties of InAsSb on InAs were studied ; The cutoff wavelength shifted to the longer wavelength with the number of epi-layrs. The cutoff one of 4 epi-layrs was 8mum though the absorption edge was not so sharp. Finally, in study of InGaAsSb/(100) InAs, the addition of Gd component into the In-Ga-As-Sb source solution made the electrical properties of grown epi-layrs raise. From the SIMS measurement, it was understood that Gd in the solution reacted with S component and as a result the segregation of S into the epi-layr was reduced. The mobility of grown InGaAsSb was 3.0*10^4 and 8.2*10^4cm^2/Vs at 300K and 77K,respectively. The carrier density was 5.7*10^<15> at 300K and 4.0*10^<15>cm^<-3> at 77K.These values were relatively superior to those of the InAs substrate. Experimental facts were expected to contribute to the fabrication of infrared materials.

了解三元化合物半导体的晶体生长对于生长用作红外材料的InGaAsSb晶体非常重要。首先，研究了 Cz 生长的 InGaSb 和 GaAlSb 以及通过温差法和旋转布里奇曼法生长的 InGaAs 的成分比、偏析和晶体质量的控制。进一步对晶体生长模型进行了模拟并与实验结果进行了比较。针对GaAs上InGaAs的异质生长问题，通过横向过生长技术，在SiN_x薄层上获得了低缺陷密度(10^4/cm^2)的晶体层。即使InGaAs中In的组成比从0.06增加到0.1，晶体质量也没有改变。接下来，在不同成分比例的多层膜生长中，研究了InAsSb在InAs上的光学性质；随着外延层数量的增加，截止波长向更长的波长移动。 4 个外延层之一的截止厚度为 8mm，但吸收边缘不是那么尖锐。最后，在InGaAsSb/(100)InAs的研究中，在In-Ga-As-Sb源溶液中添加Gd组分使得生长的外延层的电学性能得到提高。从SIMS测量可知，溶液中的Gd与S成分发生反应，结果减少了S向外延层的偏析。生长的InGaAsSb在300K和77K下的迁移率分别为3.0*10^4和8.2*10^4cm^2/Vs。载流子密度在300K时为5.7×10^15cm^-3，在77K时为4.0×10^15cm^-3。这些值相对优于InAs衬底的载流子密度。实验事实有望有助于红外材料的制造。

项目成果

X.Y.Gong,他: "High Quality InAs_<1-y>Sb_y/InAs Multilayers for Mid-IR Detectors" Cryst.Res.Technol.30・5. 603-612 (1995)

X.Y.Gong 等人：“用于中红外探测器的高质量 InAs_<1-y>Sb_y/InAs 多层”Cryst.Res.Technol.30・5 (1995)。

Y.Hayakawa,他: "Crystal Growth of AlGaSb Bulk Crystal" Proc. of 15th Canadian Congress of Applied Mechanics. 2. 760-761 (1995)

Y. Hayakawa 等人：“AlGaSb 块状晶体的晶体生长”，第 15 届加拿大应用力学大会 2. 760-761 (1995)。

X.Y.Gong, et al.: "High Quality InAs_<1-y> Sb_y/InAs Multilayrs for Mid-IR Detectors" Cryst.Res.Technol.Vol.30, No.5. 603-612 (1995)

X.Y.Gong 等人：“用于中红外探测器的高质量 InAs_<1-y> Sb_y/InAs 多层”Cryst.Res.Technol.Vol.30，No.5。

Y.Hayakawa, et al.: "Crystal Growth of AlGaSb Bulk Crystal" Proc.of 15th Canadian Congress of Applied Mechanics. Vol.2. 760-761 (1995)

Y.Hayakawa 等人：“AlGaSb 块状晶体的晶体生长”Proc.of 第 15 届加拿大应用力学大会。

X.Y.Gong,et.al.: "High Quality InAs_<1-y>Sb_y/InAs Multilaters for Mid-IR Detectors" Cryst. Res. Technol.30. 603-612 (1995)

X.Y.Gong 等人：“用于中红外探测器的高质量 InAs_<1-y>Sb_y/InAs 倍增器”晶体。