Crystal Growth of InGaSb Semiconductors under Microgravity

微重力下 InGaSb 半导体的晶体生长

• 批准号: 09044151
• 负责人: KUMAGAWA Masashi
• 金额: $ 3.2万
• 依托单位: Shizuoka University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for international Scientific Research
• 财政年份: 1997
• 资助国家: 日本
• 起止时间: 1997 至 1998
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-09044151/
• 关键词: Microgravity; Compound semiconductor; Gallium Antimonide; Indium Antimonide; Gravitational segregation; Solid-liquid interface; Orientation dependence; Simulation; 微小重力実験; インデイウムアンチモン

The effects of gravity and crystal orientation on the dissolution process of GaSb(111)A-TnSb-GaSb(111)B sandwich samples were investigated by conducting experiments in a Chinese recoverable satellite and on earth. To prepare the samples, single crystal ingots of GaSb and InSb were grown by the Czochralski method. A GaSb(111)A-InSb-GaSb(111)B combination was settled in a cylindrical BN tube and sealed in a quartz tube. The temperature was increased to 706ﾟC and decreased gradually at an average rate of O.5ﾟC/min. The InSb crystal melted at 525ﾟC and then a part of GaSb dissolved in the InSb melt. Consequently, the mixture of In-Ga-Sb solution was formed during the heating processes. InGaSb solidified during the cooling process. The numerical simulation was carried out to clarify the effect of gravity on the flow patterns, temperature and Ga compositional profiles. The obtained results are ; (1) The dissolved zone of the space-processed sample was almost parallel. On the contrary, the dissolved zone broadened toward gravitational direction in the sample processed on earth. A larger dissolution of GaSb took place as Ga-rich solution moved to the upper region of In-Ga-Sb solution due to buoyancy. (2) The GaSb with the (111)B plane dissolved in an InSb melt much more than the (111)A plane. The effect of gravity level on the flow patterns and concentrational profiles were calculated.

通过在我国返回式卫星上和地面上的实验，研究了重力和晶体取向对GaSb（111）A-TnSb-GaSb（111）B夹层样品溶解过程的影响。为了制备样品，通过直拉法生长GaSb和InSb的单晶锭。将GaSb（111）A-InSb-GaSb（111）B组合置于圆柱形BN管中并密封在石英管中。温度升高到706 ℃，然后以0.5 ℃/min的平均速率逐渐降低。InSb晶体在525 ℃熔化，然后部分GaSb溶解在InSb熔体中。因此，在加热过程中形成In-Ga-Sb溶液的混合物。InGaSb在冷却过程中凝固。通过数值模拟研究了重力对流动模式、温度和Ga组分分布的影响。结果表明：（1）空间处理后的样品溶出区几乎平行。而在地球上处理的样品，溶解带向重力方向变宽。当富Ga溶液由于浮力作用向In-Ga-Sb溶液上部移动时，发生了较大的溶解。(2)具有（111）B面的GaSb在InSb熔体中的溶解程度远大于（111）A面。计算了重力水平对流态和浓度分布的影响。

项目成果

A.HIRATA, Y.HAYAKAWA, M.KUMAGAWA et al.: "Dissolution and Growth of Multicomponent Semiconductors using a Chinese Recoverable Satellite" Proc.of 21st Inter.Sympo.on Space Technol & Science. II. 1243-1247 (1998)

A.HIRATA, Y.HAYAKAWA, M.KUMAGAWA 等人：“使用中国返回式卫星进行多组分半导体的溶解和生长”Proc.of 21st Inter.Sympo.on Space Technol

Y.HAYAKAWA,Y.OKANO,M.KUMAGAWA et al.: "Dissolution of GaSb in InSb Melt under Microgravity using a Chinese Recoverable Satellite" Proc.of JSCAST'98. 117-120 (1998)

Y.HAYAKAWA,Y.OKANO,M.KUMAGAWA 等：“使用中国返回式卫星在微重力下溶解 InSb 熔体中的 GaSb”Proc.of JSCAST98。